1,013 research outputs found
Robust Ferroelectric State in Multiferroic MnZnWO
We report the remarkably robust ferroelectric state in the multiferroic
compound MnZnWO. The substitution of the magnetic Mn
with nonmagnetic Zn reduces the magnetic exchange and provides control
of the various magnetic and multiferroic states of MnWO. Only 5 % of Zn
substitution results in a complete suppression of the frustrated collinear
(paraelectric) low temperature phase. The helical magnetic and ferroelectric
phase develops as the ground state. The multiferroic state is stable up to a
high level of substitution of more than 50 %. The magnetic, thermodynamic, and
dielectric properties as well as the ferroelectric polarization of single
crystals of MnZnWO are studied for different substitutions up
to x=0.5. The magnetic phases have been identified in single crystal neutron
scattering experiments. The ferroelectric polarization scales with the neutron
intensity of the incommensurate peak of the helical phase.Comment: 6 pages, 8 figure
The complex multiferroic phase diagram of MnCoWO
The complete magnetic and multiferroic phase diagram of
MnCoWO single crystals is investigated by means of magnetic,
heat capacity, and polarization experiments. We show that the ferroelectric
polarization in the multiferroic state abruptly changes
its direction twice upon increasing Co content, x. At x=0.075,
rotates from the axis into the plane and at
x=0.15 it flips back to the axis. The origin of the multiple
polarization flops is identified as an effect of the Co anisotropy on the
orientation and shape of the spin helix leading to thermodynamic instabilities
caused by the decrease of the magnitude of the polarization in the
corresponding phases. A qualitative description of the ferroelectric
polarization is derived by taking into account the intrachain (axis) as
well as the interchain (axis) exchange pathways connecting the magnetic
ions. In a narrow Co concentration range (0.1x0.15), an
intermediate phase, sandwiched between the collinear high-temperature and the
helical low-temperature phases, is discovered. The new phase exhibits a
collinear and commensurate spin modulation similar to the low-temperature
magnetic structure of MnWO.Comment: 18 pages, 6 figure
The antikaon nuclear potential in hot and dense matter
The antikaon optical potential in hot and dense nuclear matter is studied
within the framework of a coupled-channel self-consistent calculation taking,
as bare meson-baryon interaction, the meson-exchange potential of the J\"ulich
group. Typical conditions found in heavy-ion collisions at GSI are explored. As
in the case of zero temperature, the angular momentum components larger than
L=0 contribute significantly to the finite temperature antikaon optical
potential at finite momentum. It is found that the particular treatment of the
medium effects has a strong influence on the behavior of the antikaon potential
with temperature. Our self-consistent model, in which antikaons and pions are
dressed in the medium, gives a moderately temperature dependent antikaon
potential which remains attractive at GSI temperatures, contrary to what one
finds if only nuclear Pauli blocking effects are included.Comment: 30 pages, 8 figures, references added. Accepted for publication in
PR
Equilibrium random-field Ising critical scattering in the antiferromagnet Fe(0.93)Zn(0.07)F2
It has long been believed that equilibrium random-field Ising model (RFIM)
critical scattering studies are not feasible in dilute antiferromagnets close
to and below Tc(H) because of severe non-equilibrium effects. The high magnetic
concentration Ising antiferromagnet Fe(0.93)Zn(0.07)F2, however, does provide
equilibrium behavior. We have employed scaling techniques to extract the
universal equilibrium scattering line shape, critical exponents nu = 0.87 +-
0.07 and eta = 0.20 +- 0.05, and amplitude ratios of this RFIM system.Comment: 4 pages, 1 figure, minor revision
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Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors
The authors demonstrate, for the first time, both functional Pnp AlGaAs/InGaAsN/GaAs (Pnp InGaAsN) and Npn InGaP/InGaAsN/GaAs (Npn InGaAsN) double heterojunction bipolar transistors (DHBTs) using a 1.2 eV In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} as the base layer for low-power electronic applications. The Pnp InGaAsN DHBT has a peak current gain ({beta}) of 25 and a low turn-on voltage (V{sub ON}) of 0.79 V. This low V{sub ON} is {approximately} 0.25 V lower than in a comparable Pnp AlGAAs/GaAs HBT. For the Npn InGaAsN DHBT, it has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in an InGaP/GaAs HBT. A peak {beta} of 7 with nearly ideal I-V characteristics has been demonstrated. Since GaAs is used as the collector of both Npn and Pnp InGaAsN DHBTs, the emitter-collector breakdown voltage (BV{sub CEO}) are 10 and 12 V, respectively, consistent with the BV{sub CEO} of Npn InGaP/GaAs and Pnp AlGaAs/GaAs HBTs of comparable collector thickness and doping level. All these results demonstrate the potential of InGaAsN DHBTs as an alternative for application in low-power electronics
Discontinuous transitions in double exchange materials
It is shown that the double exchange Hamiltonian, with weak antiferromagnetic
interactions, has a rich variety of first order transitions between phases with
different electronic densities and/or magnetizations. For band fillings in the
range , and at finite temperatures, a discontinuous
transition between phases with similar electronic densities but different
magnetizations takes place. This sharp transition, which is not suppressed by
electrostatic effects, and survives in the presence of an applied field, is
consistent with the phenomenology of the doped manganites near the transition
temperature.Comment: three more variational ansatzs considere
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