All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide

We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-$^{28}$SiC) and find extra terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which are otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity of 87 nT Hz$^{-1/2}$ within a volume of $3 \times 10^{-7}$ mm$^{3}$ at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radiofrequency fields, it is scalable to much larger volumes. For an optimized light-trapping waveguide of 3 mm$^{3}$ the projection noise limit is below 100 fT Hz$^{-1/2}$.Comment: 12 pages, 6 figures; additional experimental data and an extended theoretical analysis are added in the second versio

Defects in Nanodiamonds: Application of High-Frequency cw and Pulse EPR, ODMR

© 2014, Springer-Verlag Wien. Different aspects of applications of electron paramagnetic resonance (EPR) based techniques including high frequency (HF) electron spin echo (ESE), electron-nuclear double resonance (ENDOR) and optically detected magnetic resonance (ODMR) approaches to study diamond nanostructures are examined

Enormously high concentrations of fluorescent nitrogen-vacancy centers fabricated by sintering of detonation nanodiamonds

High-pressure, high-temperature sintering of detonation nanodiamonds is used to fabricate material containing high concentrations of nitrogen-vacancy (NV) centers, without post or prior irradiation of the samples. The concentration of the NV centers in the sintered nanodiamond clusters is up to 10 4 ppm (1%) and is three orders of magnitude higher than any reported so far. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Defects in Nanodiamonds: Application of High-Frequency cw and Pulse EPR, ODMR

© 2014, Springer-Verlag Wien. Different aspects of applications of electron paramagnetic resonance (EPR) based techniques including high frequency (HF) electron spin echo (ESE), electron-nuclear double resonance (ENDOR) and optically detected magnetic resonance (ODMR) approaches to study diamond nanostructures are examined

Defects in Nanodiamonds: Application of High-Frequency cw and Pulse EPR, ODMR

© 2014, Springer-Verlag Wien. Different aspects of applications of electron paramagnetic resonance (EPR) based techniques including high frequency (HF) electron spin echo (ESE), electron-nuclear double resonance (ENDOR) and optically detected magnetic resonance (ODMR) approaches to study diamond nanostructures are examined

Defects in Nanodiamonds: Application of High-Frequency cw and Pulse EPR, ODMR

© 2014, Springer-Verlag Wien. Different aspects of applications of electron paramagnetic resonance (EPR) based techniques including high frequency (HF) electron spin echo (ESE), electron-nuclear double resonance (ENDOR) and optically detected magnetic resonance (ODMR) approaches to study diamond nanostructures are examined

All-optical quantum thermometry based on spin-level cross-relaxation and multicenter entanglement under ambient conditions in SiC

All-optical thermometry technique based on the energy level cross-relaxation in atomic-scale spin centers in SiC is demonstrated. This technique exploits a giant thermal shift of the zero-field splitting for centers in the triplet ground state, S=1, undetected by photoluminescence (so called “dark” centers) coupling to neighbouring spin-3/2 centers which can be optically polarized and read out (“bright” centers), and does not require radiofrequency fields. EPR was used to identify defects. The width of the cross-relaxation line is almost an order of magnitude smaller than the width of the excited state level-anticrossing line, which was used in all-optical thermometry and which can not be significantly reduced since determined by the lifetime of the excited state. With approximately the same temperature shift and the same signal intensities as for excited state level-anticrossing, cross-relaxation signal makes it possible to increase the sensitivity of the temperature measurement by more than an order of magnitude. Temperature sensitivity is estimated to be approximately 10 mK/Hz1/2 within a volume about 1 μ3, allocated by focused laser excitation in a scanning confocal microscope. Using cross-relaxation in the ground states of “bright” spin-3/2 centers and “dark” S=1 centers for temperature sensing and ground state level anti-crossing of “bright” spin-3/2 centers an integrated magnetic field and temperature sensor with submicron space resolution can be implemented using the same spin system. The coupling of individually addressable “bright” spin-3/2 centers connected by a chain of “dark” S=1 spins, could be considered in quantum information processing and multicenter entanglement under ambient conditions