Distribution of zinc, resistivity, and photosensitivity in a Vertical Bridgman grown Cd1-xZnxTe ingot.

We present the results of a comprehensive study of distribution of zinc, resistivity, and photosensitivity in a Cd{sub 1-x}Zn{sub x}Te ingot grown by the Vertical Bridgman method. We used several complementary methods, viz., glow discharge mass spectroscopy, photoluminescence-, resistivity-, and photosensitivity-mapping, along with photo-induced current transient spectroscopy to characterize the material. We identified electronic levels in the band-gap responsible for compensation, recombination, and photosensitivity

Dislocations and defect structure around micro-indentations and Te precipitates in CdTe

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Molecular Dynamics Studies of Dislocations in CdTe Crystals from a New Bond Order Potential

Cd1-xZnxTe (CZT) crystals are the leading semiconductors for radiation detection, but their application is limited by the high cost of detector-grade materials. High crystal costs primarily result from property non-uniformity that causes low manufacturing yield. While tremendous efforts have been made in the past to reduce Te inclusions / precipitates in CZT, this has not resulted in an anticipated improvement in material property uniformity. Moreover, it is recognized that in addition to Te particles, dislocation cells can also cause electric field perturbation and the associated property non-uniformity. Further improvement of the material, therefore, requires that dislocations in CZT crystals be understood and controlled. Here we use a recently developed CZT bond order potential to perform representative molecular dynamics simulations to study configurations, energies, and mobilities of 29 different types of possible dislocations in CdTe (i.e., x = 1) crystals. An efficient method to derive activation free energies and activation volumes of thermally activated dislocation motion will be explored. Our focus gives insight into understanding important dislocations in the material, and gives guidance toward experimental efforts for improving dislocation network structures in CZT crystals