Technology of fabrication of CDSXTe1-X solid solution on silicon substrate

Heterojunction between Si and CdSxTe1-x have been obtained by vacuum deposition of powders of cadmium sulfide and cadmium telluride on the surface of monocrystalline silicon. The optimal temperature regime for the growth of the CdSxTe1-x solid solution on the silicon surface has been determined. The values of the crystal lattice constant and the thickness of the CdSxTe1-x solid solution at the interface of the n/Si − n/ CdSxTe1-x heterostructure are calculated

Dynamics of Dirac solitons in networks

We study dynamics of Dirac solitons in prototypical networks modeling them by the nonlinear Dirac equation on metric graphs. Stationary soliton solutions of the nonlinear Dirac equation on simple metric graphs are obtained. It is shown that these solutions provide reflectionless vertex transmission of the Dirac solitons under suitable conditions. The constraints for bond nonlinearity coefficients, conjectured to represent necessary conditions for allowing reflectionless transmission over a Y-junction are derived. The Y-junction considerations are also generalized to a tree and triangle network. The analytical results are confirmed by direct numerical simulations. Keywords: nonlinear Dirac equation, metric graphs, Lorentz transformation, Gross–Neveu model, Dirac solitons, reflectionless transpor

Technology of fabrication of CdSxTe1-x solid solution on silicon substrate

Heterojunction between Si and CdSxTe1-x have been obtained by the method of vacuum deposition of powders of cadmium sulfide and cadmium telluride on the surface of monocrystalline silicon. The optimal temperature regime for the growth of the CdSxTe1-x solid solution on the silicon surface has been determined. The values of the crystal lattice constant and the thickness of the CdSxTe1-x solid solution at the interface of the n/Si – n/CdSxTe1-x heterostructure are calculated

Peasant settlers and the ‘civilizing mission’ in Russian Turkestan, 1865-1917

This article provides an introduction to one of the lesser-known examples of European settler colonialism, the settlement of European (mainly Russian and Ukrainian) peasants in Southern Central Asia (Turkestan) in the late nineteenth and early twentieth centuries. It establishes the legal background and demographic impact of peasant settlement, and the role played by the state in organising and encouraging it. It explores official attitudes towards the settlers (which were often very negative), and their relations with the local Kazakh and Kyrgyz population. The article adopts a comparative framework, looking at Turkestan alongside Algeria and Southern Africa, and seeking to establish whether paradigms developed in the study of other settler societies (such as the ‘poor white’) are of any relevance in understanding Slavic peasant settlement in Turkestan. It concludes that there are many close parallels with European settlement in other regions with large indigenous populations, but that racial ideology played a much less important role in the Russian case compared to religious divisions and fears of cultural backsliding. This did not prevent relations between settlers and the ‘native’ population deteriorating markedly in the years before the First World War, resulting in large-scale rebellion in 1916

KICKED PARTICLE TRANSPORT IN ARMCHAIR GRAPHENE NANORIBBONS

In this paper we discuss the study of charge transport in an armchair graphene nanoribbon drivenby an external time-periodic kicking potentia

SOLITON MECHANISM OF CHARGE TRANSPORT IN BRANCHED CONDUCTING POLYMERS AND VERIFICATION OF CONSERVATION LAWS

In this work we consider the modeling of charge transport processes in branched conducting polymers and verification of conservation laws, such as energy and charge conservation

Technology of fabrication of CdS

Heterojunction between Si and CdSxTe1-x have been obtained by the method of vacuum deposition of powders of cadmium sulfide and cadmium telluride on the surface of monocrystalline silicon. The optimal temperature regime for the growth of the CdSxTe1-x solid solution on the silicon surface has been determined. The values of the crystal lattice constant and the thickness of the CdSxTe1-x solid solution at the interface of the n/Si – n/CdSxTe1-x heterostructure are calculated