Non-Markovian dynamics for an open two-level system without rotating wave approximation: Indivisibility versus backflow of information

By use of the two measures presented recently, the indivisibility and the backflow of information, we study the non-Markovianity of the dynamics for a two-level system interacting with a zero-temperature structured environment without using rotating wave approximation (RWA). In the limit of weak coupling between the system and the reservoir, and by expanding the time-convolutionless (TCL) generator to the forth order with respect to the coupling strength, the time-local non-Markovian master equation for the reduced state of the system is derived. Under the secular approximation, the exact analytic solution is obtained and the sufficient and necessary conditions for the indivisibility and the backflow of information for the system dynamics are presented. In the more general case, we investigate numerically the properties of the two measures for the case of Lorentzian reservoir. Our results show the importance of the counter-rotating terms to the short-time-scale non-Markovian behavior of the system dynamics, further expose the relations between the two measures and their rationality as non-Markovian measures. Finally, the complete positivity of the dynamics of the considered system is discussed

Non-Markovian entanglement dynamics in coupled superconducting qubit systems

We theoretically analyze the entanglement generation and dynamics by coupled Josephson junction qubits. Considering a current-biased Josephson junction (CBJJ), we generate maximally entangled states. In particular, the entanglement dynamics is considered as a function of the decoherence parameters, such as the temperature, the ratio $r\equiv\omega_c/\omega_0$ between the reservoir cutoff frequency $\omega_c$ and the system oscillator frequency $\omega_0$, % between $\omega_0$ the characteristic frequency of the %quantum system of interest, and $\omega_c$ the cut-off frequency of %Ohmic reservoir and the energy levels split of the superconducting circuits in the non-Markovian master equation. We analyzed the entanglement sudden death (ESD) and entanglement sudden birth (ESB) by the non-Markovian master equation. Furthermore, we find that the larger the ratio $r$ and the thermal energy $k_BT$, the shorter the decoherence. In this superconducting qubit system we find that the entanglement can be controlled and the ESD time can be prolonged by adjusting the temperature and the superconducting phases $\Phi_k$ which split the energy levels.Comment: 13 pages, 3 figure

Chlamydia trachomatis biovar L2 infection in women in South Africa

We detected Chlamydia trachomatis biovar L2 in vaginal swab specimens of 7 women with vaginal discharge in South Africa. Whole-genome sequencing directly from clinical specimens identified a closely related cluster of strains. The clinical role of this infection in the context of syndromic management should be clarified

Many body physics from a quantum information perspective

The quantum information approach to many body physics has been very successful in giving new insight and novel numerical methods. In these lecture notes we take a vertical view of the subject, starting from general concepts and at each step delving into applications or consequences of a particular topic. We first review some general quantum information concepts like entanglement and entanglement measures, which leads us to entanglement area laws. We then continue with one of the most famous examples of area-law abiding states: matrix product states, and tensor product states in general. Of these, we choose one example (classical superposition states) to introduce recent developments on a novel quantum many body approach: quantum kinetic Ising models. We conclude with a brief outlook of the field.Comment: Lectures from the Les Houches School on "Modern theories of correlated electron systems". Improved version new references adde

From thermal rectifiers to thermoelectric devices

We discuss thermal rectification and thermoelectric energy conversion from the perspective of nonequilibrium statistical mechanics and dynamical systems theory. After preliminary considerations on the dynamical foundations of the phenomenological Fourier law in classical and quantum mechanics, we illustrate ways to control the phononic heat flow and design thermal diodes. Finally, we consider the coupled transport of heat and charge and discuss several general mechanisms for optimizing the figure of merit of thermoelectric efficiency.Comment: 42 pages, 22 figures, review paper, to appear in the Springer Lecture Notes in Physics volume "Thermal transport in low dimensions: from statistical physics to nanoscale heat transfer" (S. Lepri ed.

POx/Al2O3 stacks for surface passivation of Si and InP

Passivation of semiconductor surfaces is crucial to reduce carrier recombination losses and thereby enhance the device performance of solar cells and other semiconductor devices. Thin-film stacks of phosphorus oxide (POx) and aluminum oxide (Al2O3) have recently been shown to provide excellent passivation of semiconductor surfaces, including crystalline silicon and indium phosphide, and can also be highly interesting for passivation of other semiconductor materials such as Ge and III-V semiconductors. On silicon, the excellent passivation is attributed to the combination of a high positive fixed charge and a very low interface defect density. On InP nanowires, application of the POx/Al2O3 stacks improves charge carrier lifetime threefold as compared to unpassivated nanowires. In this work, we review and summarize recent results obtained on POx/Al2O3 stacks for semiconductor surface passivation. Several topics are discussed, including the passivation performance on various semiconductor surfaces, the processing of the POx and Al2O3 layers, the role of the capping layer, and aspects related to device integration. The POx/Al2O3 stacks feature some unique properties, including an unusually high positive fixed charge density, a low interface defect density, and can be prepared over a wide deposition temperature range. These unique properties arise in part from the mixing process that occurs between the POx and Al2O3 layers, which upon post-deposition annealing leads to the formation of AlPO4. The surface passivation provided by POx/Al2O3 stacks is highly stable and the stack can be used to conformally coat high-aspect-ratio structures such as nanowires, showing their promise for use in semiconductor devices