A Series of Octahedral First-Row Transition-Metal Ion Complexes Templated by Wells–Dawson Polyoxometalates: Synthesis, Crystal Structure, Spectroscopic, and Thermal Characterizations, and Electrochemical Properties

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Chemically grafted of single-walled carbon nanotubes onto a functionalized silicon surface

This paper highlights some interesting results regarding the Single walled carbon nanotubes (SWCNTs) functionalized by carboxylic acid, which were dispersed with ultrasonic vibration and implanted using 3 aminopropyltriethoxysilane (APTES) solution on a porous pyramidal silicon (PPS) surface. The physical characterizations of the samples were studied by both Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). Also, Fourier transform infrared spectroscopy (FTIR) has been carried out. First, SEM morphological observations reveals that nano pores dig into the sides of the micro pyramids and SWCNTs located throughout the area Si pyramidal structure. Second, AFM confirm the information ob tained by various other techniques such those of electron microscopy. Third, Fourier transform infrared spectroscopy (FTIR) analysis confirms the chemical bonding between the silicon and SWCNTs. Finally, a graphical abstract is proposed to describe the implantation steps of SWCNTs on the porous silicon (pSi) having pyramidal structure

Enhancement of the photoluminescence property of hybrid structures using single-walled carbon nanotubes/pyramidal porous silicon surface

This work presents additional physical results about the enhancement of the photoluminescence property of hybrid structures using single walled carbon nanotubes/pyramidal porous silicon surface, in comparison with what has already been published on these structures in terms of synthesis conditions and FTIR investigations as reported recently by the same authors in Journal of Alloys and Compounds 694 (2017) 1036 1044. Herein, the effect of the single walled carbon nanotubes (SWCNTs) layer on the optical properties of pyramidal Porous Silicon (pPSi) in hybrid SWCNTs/pPSi structure synthetized by chemical and electrochemical etching of silicon wafer was studied. Using both scanning electron mi croscopy (SEM), SWCNTs formed a thin film on pPSi surface and they are partly embedded in its pores. An analysis of Raman spectra for the realized structures confirmed the passivation of pPSi surface by SWCNTs film. The surface bond configurations were also monitored. Moreover, SWCNTs modified Pho toluminescence (PL) spectrum of pPSi by shifting PL peaks towards high energies, showed that the defect created in the materials can result in an efficient and stabilized photoluminescence response on Silicon (Si)