3,209 research outputs found

    Communication framework to support more effective onsite construction monitoring

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    The UK construction industry has recently witnessed an increasing demand for cost-reduction strategies due to the strict government regulations on BIM implementation. This adoption will certainly lead to a continuous work improvement, better project delivery and communication. Although the UK government has set a target of 15–20% saving on the costs of capital projects by the full implementation of BIM level 2 in 2016, this figure is unlikely to be met since the majority of construction companies are still spending approximately £20 billion per year on rebuilding and repairing the construction defects caused by miscommunication. This research addresses the problem of communication using traditional methods (i.e. communication through paper-based documents and drawings) and its impact during the construction phase in relation to clash detection. Next, we will present a communication framework using advanced visualisation technique such as augmen ted reality (AR) combined with a BIM model with an easy access to the IFC f ile on site for a compliance checking between the BIM model and the actual co nstruction site. Subsequently, site inspection can be performed more efficiently, and with more reliability. Furthermore, early warning on future occu rring clashes can be given. To reach our objectives, the research has been designed using real case scenario, following two phases of implementation. The first phase include the communication study and consists of determining users requiring a ssistance with regard to site monitoring and inspection, whereas the second, built on the results of the first phase to specify and implement the mobile AR syste

    RHESSI Observations of the Solar Flare Iron-line Feature at 6.7 keV

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    Analysis of RHESSI 3--10 keV spectra for 27 solar flares is reported. This energy range includes thermal free--free and free--bound continuum and two line features, at 6.7keV and 8keV, principally due to highly ionized iron (Fe). We used the continuum and the flux in the so-called Fe-line feature at 6.7keV to derive the electron temperature T_e, the emission measure, and the Fe-line equivalent width as functions of time in each flare. The Fe/H abundance ratio in each flare is derived from the Fe-line equivalent width as a function of T_e. To minimize instrumental problems with high count rates and effects associated with multi-temperature and nonthermal spectral components, spectra are presented mostly during the flare decay phase, when the emission measure and temperature were smoothly varying. We found flare Fe/H abundance ratios that are consistent with the coronal abundance of Fe (i.e. 4 times the photospheric abundance) to within 20% for at least 17 of the 27 flares; for 7 flares, the Fe/H abundance ratio is possibly higher by up to a factor of 2. We find evidence that the Fe XXV ion fractions are less than the theoretically predicted values by up to 60% at T_e=25 MK appear to be displaced from the most recent theoretical values by between 1 and 3 MK.Comment: To be published, Ap

    Analyze and study the impacts of different packages on static and dynamic IR Drop analysis on different Infineon designs.

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    Dynamic voltage drop depends on the switching activity of the logic compared to static IR drop, and hence it is a vector dependent concept. In this paper we have highlighted the methodology of extraction and modeling of package along with the chip-package static IR drop as well as dynamic IR drop analysis scenarios.A proper structured approach to analyze the impact of package parasitics onto the die is presented, with an emphasis to cover different corners in which IR analysis is impacted, and how it can be implemented in the design cycle. Finally, the impact of package on chip is studied by considering the histogram plots obtained from dynamic IR numbers. Later using all the numbers & plots impact of different packages on chip is realized.Results are from acquired from industrial designs in 65nm process related to the said topics. DOI: 10.17762/ijritcc2321-8169.15055
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