15 research outputs found

    Aluminium Nitride Solidly Mounted BAW Resonators with Iridium Electrodes

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    In this work we investigated the performance of aluminium nitride (AlN)-based solidly mounted resonators (SMR) made with iridium (Ir) bottom electrodes. Ir/AlN/metal stacks were grown on top of insulating Bragg mirrors composed of alternate λ/4 layers of silicon oxi-carbide (SiOC) and silicon nitride (Si3N4).Ir electrodes of various thicknesses were electron-beam evaporated on different adhesion layers, which also acted as seed layers. AlN was deposited by sputtering after conditioning the Ir electrode by a soft-etch with Ar+ ions, which was essential to achieve high quality AlN films. The structure and morphology of the different layers were analysed by x-ray diffraction (XRD) and atomic force microscopy (AFM). The frequency response of the SMRs was assessed by measuring the input scattering parameterS11 with a network analyzer. The experimental results were fitted to the Butterworth-Van Dyke circuital model. The effective electromechanical coupling factor k2eff, and the quality factor Q of the resonators were derived from the experimental data. The influence of the thickness, crystal quality and roughness of the Ir bottom electrodes on the performance of the resonators was investigated

    BAW Resonators Based on AlN with Ir Electrodes for Digital Wireless Transmissions

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    We investigate the performance of aluminum nitride (AlN)-based solidly mounted resonators (SMR) made with iridium (Ir) electrodes for applications in WCDMA filters. Ir/AlN/Ir stacks are grown on top of insulating Bragg mirrors composed of alternate λ/4 layers of silicon oxycarbide (SiOC) and silicon nitride (Si3N4). We have developed the technological processes for the fabrication of filters including the trimming of the Ir top electrode for the tuning of the bandwidth. The influence of the thickness of the top electrode after the tuning process in the performance of the SMRs and filters is analyzed. The performance of the devices is compared with that of SMRs and filters of identical design made with Mo electrodes

    Self-Heating Study of Bulk Acoustic Wave Resonators Under High RF Power

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    International audienceThe present work first provides an experimental technique to study self-heating of bulk acoustic wave (BAW) resonators under high RF power in the gigahertz range. This study is specially focused on film bulk acoustic wave resonators and solidly mounted resonators processed onto silicon wafers and designed for wireless systems. Precisely, the reflection coefficient of a one-port device is measured while up to several watts are applied and power leads to electrical drifts of impedances. In the following, we describe how absorbed power can be determined from the incident one in real time. Therefore, an infrared camera held over the radio frequency micro electromechanical system (RF-MEMS) surface with an exceptional spatial resolution reaching up to 2 µm/pixels gives accurate temperature mapping of resonators after emissivity correction. From theoretical point of view, accurate three-dimensional (3-D) structures for finite-element modeling analyses are carried out to know the best materials and architectures to use for enhancing power handling. In both experimental and theoretical investigations, comparison is made between film bulk acoustic wave resonators and solidly mounted resonators. Thus, the trend in term of material, architecture, and size of device for power application such as in transmission path of a transceiver is clearly identified
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