309 research outputs found
Reorientation Transition in Single-Domain (Ga,Mn)As
We demonstrate that the interplay of in-plane biaxial and uniaxial anisotropy
fields in (Ga,Mn)As results in a magnetization reorientation transition and an
anisotropic AC susceptibility which is fully consistent with a simple single
domain model. The uniaxial and biaxial anisotropy constants vary respectively
as the square and fourth power of the spontaneous magnetization across the
whole temperature range up to T_C. The weakening of the anisotropy at the
transition may be of technological importance for applications involving
thermally-assisted magnetization switching.Comment: 4 pages, 4 figure
DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors
We study the dc transport properties of (Ga,Mn)As diluted magnetic
semiconductors with Mn concentration varying from 1.5% to 8%. Both diagonal and
Hall components of the conductivity tensor are strongly sensitive to the
magnetic state of these semiconductors. Transport data obtained at low
temperatures are discussed theoretically within a model of band-hole
quasiparticles with a finite spectral width due to elastic scattering from Mn
and compensating defects. The theoretical results are in good agreement with
measured anomalous Hall effect and anisotropic longitudinal magnetoresistance
data. This quantitative understanding of dc magneto-transport effects in
(Ga,Mn)As is unparalleled in itinerant ferromagnetic systems.Comment: 3 pages, 3 figure
Strain dependence of the Mn anisotropy in ferromagnetic semiconductors observed by x-ray magnetic circular dichroism
We demonstrate sensitivity of the Mn 3d valence states to strain in the
ferromagnetic semiconductors (Ga,Mn)As and (Al,Ga,Mn)As, using x-ray magnetic
circular dichroism (XMCD). The spectral shape of the Mn XMCD is
dependent on the orientation of the magnetization, and features with cubic and
uniaxial dependence are distinguished. Reversing the strain reverses the sign
of the uniaxial anisotropy of the Mn pre-peak which is ascribed to
transitions from the Mn 2p core level to p-d hybridized valence band hole
states. With increasing carrier localization, the pre-peak intensity
increases, indicating an increasing 3d character of the hybridized holes.Comment: 4 pages plus 2 figures, accepted for publication in Physical Review
Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors
We report on a comprehensive combined experimental and theoretical study of
Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad
agreement between theoretical expectations and measured data allows us to
conclude that T_c in high-quality metallic samples increases linearly with the
number of uncompensated local moments on Mn_Ga acceptors, with no sign of
saturation. Room temperature ferromagnetism is expected for a 10% concentration
of these local moments. Our magnetotransport and magnetization data are
consistnent with the picture in which Mn impurities incorporated during growth
at interstitial Mn_I positions act as double-donors and compensate neighboring
Mn_Ga local moments because of strong near-neighbor Mn_Ga-Mn_I
antiferromagnetic coupling. These defects can be efficiently removed by
post-growth annealing. Our analysis suggests that there is no fundamental
obstacle to substitutional Mn_Ga doping in high-quality materials beyond our
current maximum level of 6.2%, although this achievement will require further
advances in growth condition control. Modest charge compensation does not limit
the maximum Curie temperature possible in ferromagnetic semiconductors based on
(Ga,Mn)As.Comment: 13 pages, 12 figures, submitted to Phys. Rev.
Antisite effect on ferromagnetism in (Ga,Mn)As
We study the Curie temperature and hole density of (Ga,Mn)As while
systematically varying the As-antisite density. Hole compensation by
As-antisites limits the Curie temperature and can completely quench long-range
ferromagnetic order in the low doping regime of 1-2% Mn. Samples are grown by
molecular beam epitaxy without substrate rotation in order to smoothly vary the
As to Ga flux ratio across a single wafer. This technique allows for a
systematic study of the effect of As stoichiometry on the structural,
electronic, and magnetic properties of (Ga,Mn)As. For concentrations less than
1.5% Mn, a strong deviation from Tc ~ p^0.33 is observed. Our results emphasize
that proper control of As-antisite compensation is critical for controlling the
Curie temperatures in (Ga,Mn)As at the low doping limit.Comment: 10 pages, 7 figure
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