We study the Curie temperature and hole density of (Ga,Mn)As while
systematically varying the As-antisite density. Hole compensation by
As-antisites limits the Curie temperature and can completely quench long-range
ferromagnetic order in the low doping regime of 1-2% Mn. Samples are grown by
molecular beam epitaxy without substrate rotation in order to smoothly vary the
As to Ga flux ratio across a single wafer. This technique allows for a
systematic study of the effect of As stoichiometry on the structural,
electronic, and magnetic properties of (Ga,Mn)As. For concentrations less than
1.5% Mn, a strong deviation from Tc ~ p^0.33 is observed. Our results emphasize
that proper control of As-antisite compensation is critical for controlling the
Curie temperatures in (Ga,Mn)As at the low doping limit.Comment: 10 pages, 7 figure