853 research outputs found
Theory of Interfacial Plasmon-Phonon Scattering in Supported Graphene
One of the factors limiting electron mobility in supported graphene is remote
phonon scattering. We formulate the theory of the coupling between graphene
plasmon and substrate surface polar phonon (SPP) modes, and find that it leads
to the formation of interfacial plasmon-phonon (IPP) modes, from which the
phenomena of dynamic anti-screening and screening of remote phonons emerge. The
remote phonon-limited mobilities for SiO, HfO, h-BN and
AlO substrates are computed using our theory. We find that h-BN
yields the highest peak mobility, but in the practically useful high-density
range the mobility in HfO-supported graphene is high, despite the fact
that HfO is a high- dielectric with low-frequency modes. Our
theory predicts that the strong temperature dependence of the total mobility
effectively vanishes at very high carrier concentrations. The effects of
polycrystallinity on IPP scattering are also discussed.Comment: 33 pages, 7 figure
Effects of Body Shape on the Drag of a 45 degree Sweptback-Wing-Body Configuration at Mach Numbers from 0.90 to 1.43
An investigation was made of the effects of body shape on the drag of a 45 deg sweptback-wing-body combination at Mach numbers from 0.90 to 1.43. Both the expansion and compression fields induced by body indentation were swept back as the stream Mach number increased from 0.94. The line of zero pressure change was generally tangent to the Mach lines associated with the local velocities over the wing and body. The strength of the induced pressure fields over the wing were attenuated with spanwise distance and the major effects were limited to the inboard 60 percent of the wing semispan. Asymmetrical body indentation tended to increase the lift on the forward portion of the wing and reduce the lift on the rearward portion. This redistribution of lift had a favorable effect on the wave drag due to lift. Symmetrical body indentation reduced the drag loading near the wing-body juncture at all Mach numbers. The reduction in drag loading increased in spanwise extent as the Mach number increased and the line of zero induced pressure became more nearly aligned with the line of maximum wing thickness. Calculations of the wave drag due to thickness, the wave drag due to lift, and the vortex drag of the basic and symmetrical M = 1.2 body and wing combinations at an angle of attack of 0 deg predicted the effects of indentation within 11 percent of the wing-basic-body drag throughout the Mach number range from 1.0 to 1.43. Calculations of the wave drag due to thickness, the wave drag due to lift, and the vortex drag for the basic, symmetrical M = 1.2, and asymmetrical M = 1.4 body and wing combinations predicted the total pressure drag to within 8 percent of the experimental value at M = 1.43
Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-kappa insulators
We present a comprehensive investigation of the low-field hole mobility in strained Ge and III-V (GaAs, GaSb, InSb, and In(1-x)Ga(x)As) p-channel inversion layers with both SiO(2) and high-kappa insulators. The valence (sub) band structure of Ge and III-V channels, relaxed and under biaxial strain (tensile and compressive) is calculated using an efficient self-consistent method based on the six-band k.p perturbation theory. The hole mobility is then computed using the Kubo-Greenwood formalism accounting for nonpolar hole-phonon scattering (acoustic and optical), surface roughness scattering, polar phonon scattering (III-Vs only), alloy scattering (alloys only) and remote phonon scattering, accounting for multisubband dielectric screening. As expected, we find that Ge and III-V semiconductors exhibit a mobility significantly larger than the "universal" Si mobility. This is true for MOS systems with either SiO(2) or high-kappa insulators, although the latter ones are found to degrade the hole mobility compared to SiO(2) due to scattering with interfacial optical phonons. In addition, III-Vs are more sensitive to the interfacial optical phonons than Ge due to the existence of the substrate polar phonons. Strain-especially biaxial tensile stress for Ge and biaxial compressive stress for III-Vs (except for GaAs) - is found to have a significant beneficial effect with both SiO(2) and HfO(2). Among strained p-channels, InSb exhibits the largest mobility enhancement. In(0.7)Ga(0.3)As also exhibits an increased hole mobility compared to Si, although the enhancement is not as large. Finally, our theoretical results are favorably compared with available experimental data for a relaxed Ge p-channel with a HfO(2) insulator. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524569
The role of electron-electron scattering in spin transport
We investigate spin transport in quasi 2DEG formed by III-V semiconductor
heterojunctions using the Monte Carlo method. The results obtained with and
without electron-electron scattering are compared and appreciable difference
between the two is found. The electron-electron scattering leads to suppression
of Dyakonov-Perel mechanism (DP) and enhancement of Elliott-Yafet mechanism
(EY). Finally, spin transport in InSb and GaAs heterostructures is investigated
considering both DP and EY mechanisms. While DP mechanism dominates spin
decoherence in GaAs, EY mechanism is found to dominate in high mobility InSb.
Our simulations predict a lower spin relaxation/decoherence rate in wide gap
semiconductors which is desirable for spin transport.Comment: to appear in Journal of Applied Physic
Calculation of the electron mobility in III-V inversion layers with high-kappa dielectrics
We calculate the electron mobility for a metal-oxide-semiconductor system with a metallic gate, high-kappa dielectric layer, and III-V substrate, including scattering with longitudinal-optical (LO) polar-phonons of the III-V substrate and with the interfacial excitations resulting from the coupling of insulator and substrate optical modes among themselves and with substrate plasmons. In treating scattering with the substrate LO-modes, multisubband dynamic screening is included and compared to the dielectric screening in the static limit and with the commonly used screening model obtained by defining an effective screening wave vector. The electron mobility components limited by substrate LO phonons and interfacial modes are calculated for In0.53Ga0.47As and GaAs substrates with SiO2 and HfO2 gate dielectrics. The mobility components limited by the LO-modes and interfacial phonons are also investigated as a function of temperature. Scattering with surface roughness, fixed interface charge, and nonpolar-phonons is also included to judge the relative impact of each scattering mechanism in the total mobility for In0.53Ga0.47As with HfO2 gate dielectric. We show that InGaAs is affected by interfacial-phonon scattering to an extent larger than Si, lowering the expected performance, but probably not enough to question the technological relevance of InGaAs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3500553
A Discrete State Transition Algorithm for Generalized Traveling Salesman Problem
Generalized traveling salesman problem (GTSP) is an extension of classical
traveling salesman problem (TSP), which is a combinatorial optimization problem
and an NP-hard problem. In this paper, an efficient discrete state transition
algorithm (DSTA) for GTSP is proposed, where a new local search operator named
\textit{K-circle}, directed by neighborhood information in space, has been
introduced to DSTA to shrink search space and strengthen search ability. A
novel robust update mechanism, restore in probability and risk in probability
(Double R-Probability), is used in our work to escape from local minima. The
proposed algorithm is tested on a set of GTSP instances. Compared with other
heuristics, experimental results have demonstrated the effectiveness and strong
adaptability of DSTA and also show that DSTA has better search ability than its
competitors.Comment: 8 pages, 1 figur
Spin diffusion/transport in -type GaAs quantum wells
The spin diffusion/transport in -type (001) GaAs quantum well at high
temperatures ( K) is studied by setting up and numerically solving the
kinetic spin Bloch equations together with the Poisson equation
self-consistently. All the scattering, especially the electron-electron Coulomb
scattering, is explicitly included and solved in the theory. This enables us to
study the system far away from the equilibrium, such as the hot-electron effect
induced by the external electric field parallel to the quantum well. We find
that the spin polarization/coherence oscillates along the transport direction
even when there is no external magnetic field. We show that when the scattering
is strong enough, electron spins with different momentums oscillate in the same
phase which leads to equal transversal spin injection length and ensemble
transversal injection length. It is also shown that the intrinsic scattering is
already strong enough for such a phenomena. The oscillation period is almost
independent on the external electric field which is in agreement with the
latest experiment in bulk system at very low temperature [Europhys. Lett. {\bf
75}, 597 (2006)]. The spin relaxation/dephasing along the diffusion/transport
can be well understood by the inhomogeneous broadening, which is caused by the
momentum-dependent diffusion and the spin-orbit coupling, and the scattering.
The scattering, temperature, quantum well width and external magnetic/electric
field dependence of the spin diffusion is studied in detail.Comment: 12 pages, 6 figures, to be published in J Appl. Phy
Relation Between Einstein And Quantum Field Equations
We show that there exists a choice of scalar field modes, such that the
evolution of the quantum field in the zero-mass and large-mass limits is
consistent with the Einstein equations for the background geometry. This choice
of modes is also consistent with zero production of these particles and thus
corresponds to a preferred vacuum state preserved by the evolution. In the
zero-mass limit, we find that the quantum field equation implies the Einstein
equation for the scale factor of a radiation-dominated universe; in the
large-mass case, it implies the corresponding Einstein equation for a
matter-dominated universe. Conversely, if the classical radiation-dominated or
matter-dominated Einstein equations hold, there is no production of scalar
particles in the zero and large mass limits, respectively. The suppression of
particle production in the large mass limit is over and above the expected
suppression at large mass. Our results hold for a certain class of conformally
ultrastatic background geometries and therefore generalize previous results by
one of us for spatially flat Robertson-Walker background geometries. In these
geometries, we find that the temporal part of the graviton equations reduces to
the temporal equation for a massless minimally coupled scalar field, and
therefore the results for massless particle production hold also for gravitons.
Within the class of modes we study, we also find that the requirement of zero
production of massless scalar particles is not consistent with a non-zero
cosmological constant. Possible implications are discussed.Comment: Latex, 24 pages. Minor changes in text from original versio
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