Effects of plasma hydrogenation on trapping properties of dislocations in heteroepitaxial InP/GaAs

In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approximately 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual dislocation related deep levels, before and after passivation. It is further shown that the 'apparent' activation energies of dislocation related deep levels, before and after passivation, reduce by approximately 70 meV as DLTS fill pulse times are increased from 1 microsecond to 1 millisecond. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells

The double Ringel-Hall algebra on a hereditary abelian finitary length category

In this paper, we study the category $\mathscr{H}^{(\rho)}$ of semi-stable coherent sheaves of a fixed slope $\rho$ over a weighted projective curve. This category has nice properties: it is a hereditary abelian finitary length category. We will define the Ringel-Hall algebra of $\mathscr{H}^{(\rho)}$ and relate it to generalized Kac-Moody Lie algebras. Finally we obtain the Kac type theorem to describe the indecomposable objects in this category, i.e. the indecomposable semi-stable sheaves.Comment: 29 page

Better preparation and training determine home care workers’ self-efficacy in contributing to heart failure self-carebetter preparation

Objective Identify determinants of home care workers’ (HCW) self-efficacy in contributing to heart failure (HF) self-care. Methods Secondary analysis of a survey (n = 328) examining characteristics of HCWs caring for adults with HF in New York. Self-efficacy assessed using Caregiver Self-Efficacy in Contributing to Self-Care Scale. Standardized scores range 0–100; ≥ 70 points indicate adequate self-efficacy. Characteristics determined by self-efficacy (low vs. adequate). Prevalence ratios with 95% confidence intervals (PR [95% CI]) were estimated using multivariable Poisson regression with robust standard errors. Results Home care workers with adequate self-efficacy had at least some prior HF training (55% vs. 17%, p < .001) and greater job satisfaction (90% vs. 77%, p = .003). Significant determinants for adequate self-efficacy were employment length (1.02 [1.00–1.03], p = .027), preparation for caregiving (3.10 [2.42–3.96], p < .001), and HF training (1.48 [1.20–1.84], p < .001). Conclusion Home care agencies and policy-makers can target caregiving preparation and HF training to improve HCWs’ confidence in caring for adult HF patients

The rising burden of spondylodiscitis in Germany: an epidemiologic study based on the federal statistical office database [Abstract]

Introduction: Spondylodiscitis is the commonest form of infectious disease of the spine and harbours a high mortality rate of up to 20%. Recent demographic trends in Germany, such as an aging population, immunosuppression, and intravenous drug use, suggest that the incidence of spondylodiscitis may be on the rise. However, the exact epidemiological development of the disease remains uncertain. This study aims to analyse the burden on the tertiary healthcare system in Germany using data from the Federal Statistical Office of Germany (FSOG) database. Materials and Methods: All cases of spondylodiscitis diagnosed between 2005 and 2021 were identified from the FSOG database. The study characterised the mean duration of hospital stays, total and population-adjusted number of diagnoses made, age-stratified incidence, and outcomes of hospitalised patients. Results: A total of 131,982 diagnoses for spondylodiscitis were identified between 2005 and 2021. The number of diagnoses for spondylodiscitis has doubled during this period, from 5.4/100,000 population in 2005 to 11/100,000 population in 2021. The highest increase in admissions was recorded for those aged 90 years and above (+1307%), 80-89 (+376%) and 70-79 (+99%). Hospital discharges to rehabilitation facilities have increased by 160%, and discharges against medical advice by 91%. On the other hand, during the analysed period, the in-hospital mortality rate has decreased by 52%. Conclusion: The population-adjusted incidence of spondylodiscitis in Germany has more than doubled between 2005 and 2021, highlighting the clinical relevance of this disease. During the same period, in-hospital mortality dropped by half. These findings suggest the need for further investigation into optimal therapy, particularly the role and timing of surgical treatment

The strong side of weak topological insulators

Three-dimensional topological insulators are classified into "strong" (STI) and "weak" (WTI) according to the nature of their surface states. While the surface states of the STI are topologically protected from localization, this does not hold for the WTI. In this work we show that the surface states of the WTI are actually protected from any random perturbation that does not break time-reversal symmetry, and does not close the bulk energy gap. Consequently, the conductivity of metallic surfaces in the clean system remains finite even in the presence of strong disorder of this type. In the weak disorder limit the surfaces are found to be perfect metals, and strong surface disorder only acts to push the metallic surfaces inwards. We find that the WTI differs from the STI primarily in its anisotropy, and that the anisotropy is not a sign of its weakness but rather of its richness.Comment: 12 pages, 7 figure

Subband Quantum Scattering Times for Algaas/GaAs Obtained Using Digital Filtering

In this study we investigate both the transport and quantum scattering times as a function of the carrier concentration for a modulation doped Al(0.3)Ga(0.7)As/GaAs structure. Carriers in the well are generated as a result of the persistent photoconductivity effect. When more than one subband becomes populated, digital filtering is used to separate the components for each of the excited subbands. We find that the quantum scattering time for the ground subband increases initially as the carrier concentration is increased. However, once the second subband becomes populated, the ground subband scattering time begins to decrease. The quantum scattering time for the excited subband is also observed to decrease as the concentration is increased. From the ratio of the transport and quantum scattering times, it is seen that the transport in the well becomes more isotropic also as the concentration is increased

Applications of BGP-reflection functors: isomorphisms of cluster algebras

Given a symmetrizable generalized Cartan matrix $A$, for any index $k$, one can define an automorphism associated with $A,$ of the field $\mathbf{Q}(u_1, >..., u_n)$ of rational functions of $n$ independent indeterminates $u_1,..., u_n.$ It is an isomorphism between two cluster algebras associated to the matrix $A$ (see section 4 for precise meaning). When $A$ is of finite type, these isomorphisms behave nicely, they are compatible with the BGP-reflection functors of cluster categories defined in [Z1, Z2] if we identify the indecomposable objects in the categories with cluster variables of the corresponding cluster algebras, and they are also compatible with the "truncated simple reflections" defined in [FZ2, FZ3]. Using the construction of preprojective or preinjective modules of hereditary algebras by Dlab-Ringel [DR] and the Coxeter automorphisms (i.e., a product of these isomorphisms), we construct infinitely many cluster variables for cluster algebras of infinite type and all cluster variables for finite types.Comment: revised versio

Contact Representations of Graphs in 3D

We study contact representations of graphs in which vertices are represented by axis-aligned polyhedra in 3D and edges are realized by non-zero area common boundaries between corresponding polyhedra. We show that for every 3-connected planar graph, there exists a simultaneous representation of the graph and its dual with 3D boxes. We give a linear-time algorithm for constructing such a representation. This result extends the existing primal-dual contact representations of planar graphs in 2D using circles and triangles. While contact graphs in 2D directly correspond to planar graphs, we next study representations of non-planar graphs in 3D. In particular we consider representations of optimal 1-planar graphs. A graph is 1-planar if there exists a drawing in the plane where each edge is crossed at most once, and an optimal n-vertex 1-planar graph has the maximum (4n - 8) number of edges. We describe a linear-time algorithm for representing optimal 1-planar graphs without separating 4-cycles with 3D boxes. However, not every optimal 1-planar graph admits a representation with boxes. Hence, we consider contact representations with the next simplest axis-aligned 3D object, L-shaped polyhedra. We provide a quadratic-time algorithm for representing optimal 1-planar graph with L-shaped polyhedra

Structural investigation of MOVPE-Grown GaAs on Ge by X-ray techniques

The selection of appropriate characterisation methodologies is vital for analysing and comprehending the sources of defects and their influence on the properties of heteroepitaxially grown III-V layers. In this work we investigate the structural properties of GaAs layers grown by Metal-Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates – (100) with 6⁰ offset towards – under various growth conditions. Synchrotron X-ray topography (SXRT) is employed to investigate the nature of extended linear defects formed in GaAs epilayers. Other X-ray techniques, such as reciprocal space mapping (RSM) and triple axis ω-scans of (00l)-reflections (l = 2, 4, 6) are used to quantify the degree of relaxation and presence of antiphase domains (APDs) in the GaAs crystals. The surface roughness is found to be closely related to the size of APDs formed at the GaAs/Ge heterointerface, as confirmed by X-ray diffraction (XRD), as well as atomic force microscopy (AFM), and transmission electron microscopy (TEM)