184 research outputs found
Co-planar spin-polarized light emitting diode
Studies of spin manipulation in semiconductors has benefited from the
possibility to grow these materials in high quality on top of optically active
III-V systems. The induced electroluminescence in these layered semiconductor
heterostructures has been used for a reliable spin detection. In semiconductors
with strong spin-orbit interaction, the sensitivity of vertical devices may be
insufficient, however, because of the sepration of the spin aligner part and
the spin detection region by one or more heterointerfaces and becuse of the
short spin coherence length. Here we demostrate that higly sensitive spin
detection can be achieved using a lateral arrangement of the spin polarized and
optically active regions. Using our co-planar spin-polarized light emitting
diodes we detect electrical field induced spin generation in a semiconductor
heterojunction two-dimensional hole gas. The polarization results from spin
asymmetric recombination of injected electrons with strongly SO coupled
two-dimensional holes. The possibility to detect magnetized Co particles
deposited on the co-planar diode structure is also demonstrated.Comment: 8 pages, 3 figure
The Scaling of the Anomalous Hall Effect in the Insulating Regime
We develop a theoretical approach to study the scaling of anomalous Hall
effect (AHE) in the insulating regime, which is observed to be
in experiments over a large
range of materials. This scaling is qualitatively different from the ones
observed in metals. Basing our theory on the phonon-assisted hopping mechanism
and percolation theory, we derive a general formula for the anomalous Hall
conductivity, and show that it scales with the longitudinal conductivity as
with predicted to be
, quantitatively in agreement with the experimental
observations. Our result provides a clearer understanding of the AHE in the
insulating regime and completes the scaling phase diagram of the AHE.Comment: 4 pages, 4 figures, plus the supplementary information. Minor
revisions made according to Referee report
Experimental observation of the spin-Hall effect in a two dimensional spin-orbit coupled semiconductor system
We report the experimental observation of the spin-Hall effect in a
two-dimensional (2D) hole system with Rashba spin-orbit coupling.
The 2D hole layer is a part of a p-n junction light-emitting diode with a
specially designed co-planar geometry which allows an angle-resolved
polarization detection at opposite edges of the 2D hole system. In equilibrium
the angular momenta of the Rashba split heavy hole states lie in the plane of
the 2D layer. When an electric field is applied across the hole channel a non
zero out-of-plane component of the angular momentum is detected whose sign
depends on the sign of the electric field and is opposite for the two edges.
Microscopic quantum transport calculations show only a weak effect of disorder
suggesting that the clean limit spin-Hall conductance description (intrinsic
spin-Hall effect) might apply to our system.Comment: 4 pages, 3 figures, paper based on work presented at the Gordon
Research Conference on Magnetic Nano-structures (August 2004) and Oxford Kobe
Seminar on Spintronics (September 2004); accepted for publication in Physical
Review Letters December 200
Spin Hall effect transistor
Spin transistors and spin Hall effects have been two separate leading
directions of research in semiconductor spintronics which seeks new paradigms
for information processing technologies. We have brought the two directions
together to realize an all-semiconductor spin Hall effect transistor. Our
scheme circumvents semiconductor-ferromagnet interface problems of the original
Datta-Das spin transistor concept and demonstrates the utility of the spin Hall
effects in microelectronics. The devices use diffusive transport and operate
without electrical current, i.e., without Joule heating in the active part of
the transistor. We demonstrate a spin AND logic function in a semiconductor
channel with two gates. Our experimental study is complemented by numerical
Monte Carlo simulations of spin-diffusion through the transistor channel.Comment: 11 pages, 3 figure
The quantum Hall plateau transition at order 1/N
The localization behavior of noninteracting two-dimensional electrons in a
random potential and strong magnetic field is of fundamental interest for the
physics of the quantum Hall effect. In order to understand the emergence of
power-law delocalization near the discrete extended-state energies , we study a generalization of the disorder-averaged
Liouvillian framework for the lowest Landau level to flavors of electron
densities (N=1 for the physical case). We find analytically the large-N limit
and 1/N corrections for all disorder strengths: at this gives an
estimate of the critical conductivity, and at order 1/N an estimate of the
localization exponent . The localization properties of the analytically
tractable theory seem to be continuously connected to those of the
exact quantum Hall plateau transition at .Comment: 4 pages, 4 figures; improved text, 1 corrected referenc
Free expansion of lowest Landau level states of trapped atoms: a wavefunction microscope
We show that for any lowest-Landau-level state of a trapped, rotating,
interacting Bose gas, the particle distribution in coordinate space in a free
expansion (time of flight) experiment is related to that in the trap at the
time it is turned off by a simple rescaling and rotation. When the
lowest-Landau-level approximation is valid, interactions can be neglected
during the expansion, even when they play an essential role in the ground state
when the trap is present. The correlations in the density in a single snapshot
can be used to obtain information about the fluid, such as whether a transition
to a quantum Hall state has occurred.Comment: 5 pages, no figures. v2: discussion of neglect of interactions during
expansion improved, refs adde
Edge spin accumulation in semiconductor two-dimensional hole gases
The controlled generation of localized spin densities is a key enabler of
semiconductor spintronics In this work, we study spin Hall effect induced edge
spin accumulation in a two-dimensional hole gas with strong spin orbit
interactions. We argue that it is an intrinsic property, in the sense that it
is independent of the strength of disorder scattering. We show numerically that
the spin polarization near the edge induced by this mechanism can be large, and
that it becomes larger and more strongly localized as the spin-orbit coupling
strength increases, and is independent of the width of the conducting strip
once this exceeds the elastic scattering mean-free-path. Our experiments in
two-dimensional hole gas microdevices confirm this remarkable spin Hall effect
phenomenology. Achieving comparable levels of spin polarization by external
magnetic fields would require laboratory equipment whose physical dimensions
and operating electrical currents are million times larger than those of our
spin Hall effect devices.Comment: 6 pages, 5 figure
Measuring the condensate fraction of rapidly rotating trapped boson systems: off-diagonal order from the density
We demonstrate a direct connection between the density profile of a system of
ultra-cold trapped bosonic particles in the rapid-rotation limit and its
condensate fraction. This connection can be used to probe the crossover from
condensed vortex-lattice states to uncondensed quantum fluid states that occurs
in rapidly rotating boson systems as the particle density decreases or the
rotation frequency increases. We illustrate our proposal with a series of
examples, including ones based on models of realistic finite trap systems, and
comment on its application to freely expanding boson density profile
measurements.Comment: 4 pages, 3 figures, version accepted for publication in Phys. Rev.
Let
DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors
We study the dc transport properties of (Ga,Mn)As diluted magnetic
semiconductors with Mn concentration varying from 1.5% to 8%. Both diagonal and
Hall components of the conductivity tensor are strongly sensitive to the
magnetic state of these semiconductors. Transport data obtained at low
temperatures are discussed theoretically within a model of band-hole
quasiparticles with a finite spectral width due to elastic scattering from Mn
and compensating defects. The theoretical results are in good agreement with
measured anomalous Hall effect and anisotropic longitudinal magnetoresistance
data. This quantitative understanding of dc magneto-transport effects in
(Ga,Mn)As is unparalleled in itinerant ferromagnetic systems.Comment: 3 pages, 3 figure
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