Realistic modelling of quantum point contacts subject to high magnetic fields and with current bias at out of linear response regime

The electron and current density distributions in the close proximity of quantum point contacts (QPCs) are investigated. A three dimensional Poisson equation is solved self-consistently to obtain the electron density and potential profile in the absence of an external magnetic field for gate and etching defined devices. We observe the surface charges and their apparent effect on the confinement potential, when considering the (deeply) etched QPCs. In the presence of an external magnetic field, we investigate the formation of the incompressible strips and their influence on the current distribution both in the linear response and out of linear response regime. A spatial asymmetry of the current carrying incompressible strips, induced by the large source drain voltages, is reported for such devices in the non-linear regime.Comment: 16 Pages, 9 Figures, submitted to PR

Self-consistent Coulomb picture of an electron-electron bilayer system

In this work we implement the self-consistent Thomas-Fermi approach and a local conductivity model to an electron-electron bilayer system. The presence of an incompressible strip, originating from screening calculations at the top (or bottom) layer is considered as a source of an external potential fluctuation to the bottom (or top) layer. This essentially yields modifications to both screening properties and the magneto-transport quantities. The effect of the temperature, inter-layer distance and density mismatch on the density and the potential fluctuations are investigated. It is observed that the existence of the incompressible strips plays an important role simply due to their poor screening properties on both screening and the magneto-resistance (MR) properties. Here we also report and interpret the observed MR Hysteresis within our model.Comment: 12 pages, 12 figures, submitted to PR

Anomalous resistance overshoot in the integer quantum Hall effect

In this work we report experiments on defined by shallow etching narrow Hall bars. The magneto-transport properties of intermediate mobility two-dimensional electron systems are investigated and analyzed within the screening theory of the integer quantized Hall effect. We observe a non-monotonic increase of Hall resistance at the low magnetic field ends of the quantized plateaus, known as the overshoot effect. Unexpectedly, for Hall bars that are defined by shallow chemical etching the overshoot effect becomes more pronounced at elevated temperatures. We observe the overshoot effect at odd and even integer plateaus, which favor a spin independent explanation, in contrast to discussion in the literature. In a second set of the experiments, we investigate the overshoot effect in gate defined Hall bar and explicitly show that the amplitude of the overshoot effect can be directly controlled by gate voltages. We offer a comprehensive explanation based on scattering between evanescent incompressible channels.Comment: 7 pages and 5 figure

Incompressible strips in dissipative Hall bars as origin of quantized Hall plateaus

We study the current and charge distribution in a two dimensional electron system, under the conditions of the integer quantized Hall effect, on the basis of a quasi-local transport model, that includes non-linear screening effects on the conductivity via the self-consistently calculated density profile. The existence of ``incompressible strips'' with integer Landau level filling factor is investigated within a Hartree-type approximation, and non-local effects on the conductivity along those strips are simulated by a suitable averaging procedure. This allows us to calculate the Hall and the longitudinal resistance as continuous functions of the magnetic field B, with plateaus of finite widths and the well-known, exactly quantized values. We emphasize the close relation between these plateaus and the existence of incompressible strips, and we show that for B values within these plateaus the potential variation across the Hall bar is very different from that for B values between adjacent plateaus, in agreement with recent experiments.Comment: 13 pages, 11 figures, All color onlin