Levitated Spinning Graphene

A method is described for levitating micron-sized few layer graphene flakes in a quadrupole ion trap. Starting from a liquid suspension containing graphene, charged flakes are injected into the trap using the electrospray ionization technique and are probed optically. At micro-torr pressures, torques from circularly polarized light cause the levitated particles to rotate at frequencies >1 MHz, which can be inferred from modulation of light scattering off the rotating flake when an electric field resonant with the rotation rate is applied. Possible applications of these techniques will be presented, both to fundamental measurements of the mechanical and electronic properties of graphene and to new approaches to graphene crystal growth, modification and manipulation.Comment: 23 pages, 11 figure

Comparison of storm-time changes of geomagnetic field at ground and at MAGSAT altitudes

Computations concerning variations of the geomagnetic field at MAGSAT altitudes were investigated. Using MAGSAT data for the X, Y, and Z components of the geomagnetic field, a computer conversion to yield the H component was performed. Two methods of determining delta H normalized to a constant geocentric distance R sub 0 = 6800 were investigated, and the utility of elta H at times of magnetic storms was considered. Delta H at a geographical latitude of 0 at dawn and dusk, the standard Dst, and K sub p histograms were plotted and compared. Magnetic anomalies are considered. Examination of data from the majority of the 400 passes of MAGSAT considered show a reasonable delta H versus latitude variation. Discrepancies in values are discussed

Detection of a single-charge defect in a metal-oxide-semiconductor structure using vertically coupled Al and Si single-electron transistors

An Al-AlO_x-Al single-electron transistor (SET) acting as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET) can induce a vertically aligned Si SET at the Si/SiO_2 interface near the MOSFET channel conductance threshold. By using such a vertically coupled Al and Si SET system, we have detected a single-charge defect which is tunnel-coupled to the Si SET. By solving a simple electrostatic model, the fractions of each coupling capacitance associated with the defect are extracted. The results reveal that the defect is not a large puddle or metal island, but its size is rather small, corresponding to a sphere with a radius less than 1 nm. The small size of the defect suggests it is most likely a single-charge trap at the Si/SiO_2 interface. Based on the ratios of the coupling capacitances, the interface trap is estimated to be about 20 nm away from the Si SET.Comment: 5 pages and 5 figure

The slot car stig: Performance and consistency of a slot car driven by a heuristic algorithm in an embedded microcontroller

We present theory and measured performance of an autonomous slot car driven by a heuristic algorithm on a typical track. The hardware consists of a PIC 8-bit single-chip microcontroller with various sensors driving a standard permanent-magnet (PM) brushed dc (BDC) motor in a mechanically-standard Scalextric platform. We present some interesting results concerning the relative difficulty of apparently-balanced lanes on a track. The car achieves optimum lap times with high consistency. Measured performance agrees with theoretical expectation. The consistency of performance allows the impact of experimental changes to be reliably assessed

The Habitable Zone Gallery

The Habitable Zone Gallery (www.hzgallery.org) is a new service to the exoplanet community which provides Habitable Zone (HZ) information for each of the exoplanetary systems with known planetary orbital parameters. The service includes a sortable table with information on the percentage of orbital phase spent within the HZ, planetary effective temperatures, and other basic planetary properties. In addition to the table, we also plot the period and eccentricity of the planets with respect to their time spent in the HZ. The service includes a gallery of known systems which plot the orbits and the location of the HZ with respect to those orbits. Also provided are animations which aid in orbit visualization and provide the changing effective temperature for those planets in eccentric orbits. Here we describe the science motivation, the under-lying calculations, and the structure of the web site.Comment: 6 pages, 3 figures, accepted for publication in PAS

Faber polynomials and poincare series

In this paper we consider weakly holomorphic modular forms (i.e., those meromorphic modular forms for which poles only possibly occur at the cusps) of weight 2−k∈2\Z for the full modular group \SL2(\Z). The space has a distinguished set of generators f2−k,m. Such weakly holomorphic modular forms have been classified in terms of finitely many Eisenstein series, the unique weight 12 newform Δ, and certain Faber polynomials in the modular invariant j(z), the Hauptmodul for \SL2(\Z). We employ the theory of harmonic weak Maass forms and (non-holomorphic) Maass–Poincaré series in order to obtain the asymptotic growth of the coefficients of these Faber polynomials. Along the way, we obtain an asymptotic formula for the partial derivatives of the Maass–Poincaré series with respect to y as well as extending an asymptotic for the growth of the ℓth repeated integral of the Gauss error function at x to include ℓ∈\R and a wider range of x.postprin

Coulomb blockade in a Si channel gated by an Al single-electron transistor

We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated with Coulomb blockade in the channel, revealing the formation of a Si single-electron transistor. Abrupt steps present in sweeps of the Al transistor conductance versus gate voltage are correlated with single-electron charging events in the Si transistor, and vice versa. Analysis of these correlations using a simple electrostatic model demonstrates that the two single-electron transistor islands are closely aligned, with an inter-island capacitance approximately equal to 1/3 of the total capacitance of the Si transistor island, indicating that the Si transistor is strongly coupled to the Al transistor.Comment: 3 pages, 4 figures, 1 table; typos corrected, minor clarifications added; published in AP

Quantum Spin Hall Effect in Graphene

We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts graphene from an ideal two dimensional semimetallic state to a quantum spin Hall insulator. This novel electronic state of matter is gapped in the bulk and supports the quantized transport of spin and charge in gapless edge states that propagate at the sample boundaries. The edge states are non chiral, but they are insensitive to disorder because their directionality is correlated with spin. The spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder and symmetry breaking fields are discussed.Comment: 4 pages, published versio