110 research outputs found
Anisotropic Electron Spin Lifetime in (In,Ga)As/GaAs (110) Quantum Wells
Anisotropic electron spin lifetimes in strained undoped (In,Ga)As/GaAs (110)
quantum wells of different width and height are investigated by time-resolved
Faraday rotation and time-resolved transmission and are compared to the
(001)-orientation. From the suppression of spin precession, the ratio of
in-plane to out-of-plane spin lifetimes is calculated. Whereas the ratio
increases with In concentration in agreement with theory, a surprisingly high
anisotropy of 480 is observed for the broadest quantum well, when expressed in
terms of spin relaxation times.Comment: 4 pages, 4 figures, revise
In situ x-ray diffraction study of epitaxial growth of ordered Fe3Si films
Molecular beam epitaxy of Fe3Si on GaAs(001) is studied in situ by grazing
incidence x-ray diffraction. Layer-by-layer growth of Fe3Si films is observed
at a low growth rate and substrate temperatures near 200 degrees Celsius. A
damping of x-ray intensity oscillations due to a gradual surface roughening
during growth is found. The corresponding sequence of coverages of the
different terrace levels is obtained. The after-deposition surface recovery is
very slow. Annealing at 310 degrees Celsius combined with the deposition of one
monolayer of Fe3Si restores the surface to high perfection and minimal
roughness. Our stoichiometric films possess long-range order and a high quality
heteroepitaxial interface.Comment: 8 pages, 3 figure
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Lattice matched Volmer–Weber growth of Fe3Si on GaAs(001) - the influence of the growth rate
We investigate the formation of lattice matched single-crystalline Fe3Si/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the epitaxial growth of isolated Fe3Si islands up to the formation of continuous films as a result of island coalescence. We find coherent defect-free layers exhibiting compositional disorder near the Fe3Si/GaAs - interface for higher growth rates, whereas they are fully ordered for lower growth rates. © 2019 IOP Publishing Ltd
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Characterization of L21 order in Co2FeSi thin films on GaAs
Co2FeSi/GaAs(110) and Co2FeSi/GaAs(-1-1-1)B hybrid structures were grown by molecular-beam epitaxy (MBE) and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The films contain inhomogeneous distributions of ordered L21 and B2 phases. The average stoichiometry could be determined by XRD for calibration of the MBE sources. Diffusion processes lead to inhomogeneities, influencing long-range order. An average L21 ordering of up to 65% was measured by grazing-incidence XRD. Lateral inhomogeneities of the spatial distribution of long-range order in Co2FeSi were imaged using dark-field TEM with superlattice reflections and shown to correspond to variations of the Co/Fe ratio
Residual disorder and diffusion in thin Heusler alloy films
Co2FeSi/GaAs(110) and Co2FeSi/GaAs(111)B hybrid structures were grown by
molecular-beam epitaxy and characterized by transmission electron microscopy
(TEM) and X-ray diffraction. The films contained inhomogeneous distributions of
ordered L2_1 and B2 phases. The average stoichiometry was controlled by lattice
parameter measurements, however diffusion processes lead to inhomogeneities of
the atomic concentrations and the degradation of the interface, influencing
long-range order. An average long-range order of 30-60% was measured by
grazing-incidence X-ray diffraction, i.e. the as-grown Co2FeSi films were
highly but not fully ordered. Lateral inhomogeneities of the spatial
distribution of long-range order in Co2FeSi were found using dark-field TEM
images taken with superlattice reflections
Ordered structure of FeGe<sub>2</sub> formed during solid-phase epitaxy
Fe3Si/Ge(Fe,Si)/Fe3Si thin-film stacks were grown by a combination of molecular beam epitaxy and solid-phase epitaxy (Ge on Fe3Si). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron x-ray diffraction. The Ge(Fe,Si) films crystallize in the well-oriented, layered tetragonal structure FeGe2 with space group P4mm. This kind of structure does not exist as a bulk material and is stabilized by the solid-phase epitaxy of Ge on Fe3Si. We interpret this as an ordering phenomenon induced by minimization of the elastic energy of the epitaxial film
Ab initio and nuclear inelastic scattering studies of FeSi/GaAs heterostructures
The structure and dynamical properties of the FeSi/GaAs(001) interface
are investigated by density functional theory and nuclear inelastic scattering
measurements. The stability of four different atomic configurations of the
FeSi/GaAs multilayers is analyzed by calculating the formation energies and
phonon dispersion curves. The differences in charge density, magnetization, and
electronic density of states between the configurations are examined. Our
calculations unveil that magnetic moments of the Fe atoms tend to align in a
plane parallel to the interface, along the [110] direction of the FeSi
crystallographic unit cell. In some configurations, the spin polarization of
interface layers is larger than that of bulk FeSi. The effect of the
interface on element-specific and layer-resolved phonon density of states is
discussed. The Fe-partial phonon density of states measured for the FeSi
layer thickness of three monolayers is compared with theoretical results
obtained for each interface atomic configuration. The best agreement is found
for one of the configurations with a mixed Fe-Si interface layer, which
reproduces the anomalous enhancement of the phonon density of states below 10
meVComment: 14 pages, 9 figures, 4 table
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