On the Thermal Activation of Negative Bias Temperature Instability

The temperature dependence of negative bias temperature instability (NBTI) is investigated on 2.0nm SiO2 devices from temperatures ranging from 300K down to 6K with a measurement window of ~12ms to 100s. Results indicate that classic NBTI degradation is observed down to ~200K and rarely observed at temperatures below 140K in the experimental window. Since experimental results show the charge trapping component contributing to NBTI is thermally activated, the results cannot be explained with the conventionally employed elastic tunneling theory. A new mechanism is observed at temperatures below 200K where device performance during stress conditions improves rather than degrades with time, which is opposite to the classical NBTI phenomenon

Logarithmic behavior of degradation dynamics in metal--oxide semiconductor devices

In this paper the authors describe a theoretical simple statistical modelling of relaxation process in metal-oxide semiconductor devices that governs its degradation. Basically, starting from an initial state where a given number of traps are occupied, the dynamics of the relaxation process is measured calculating the density of occupied traps and its fluctuations (second moment) as function of time. Our theoretical results show a universal logarithmic law for the density of occupied traps $\bar{} \sim \phi (T,E_{F}) (A+B \ln t)$, i.e., the degradation is logarithmic and its amplitude depends on the temperature and Fermi Level of device. Our approach reduces the work to the averages determined by simple binomial sums that are corroborated by our Monte Carlo simulations and by experimental results from literature, which bear in mind enlightening elucidations about the physics of degradation of semiconductor devices of our modern life

Acquired heart block: A possible complication of patent ductus arteriosus in a preterm infant

A large patent ductus arteriosus (PDA) is a frequently encountered clinical problem in extremely low birth weight (ELBW) infants. It leads to an increased pulmonary blood flow and in a decreased or reversed diastolic flow in the systemic circulation, resulting in complications. Here we report a possible complication of PDA not previously published. On day 8 of life, a male ELBW infant (birth weight 650 g) born at a gestational age of 23 weeks and 3 days developed an atrioventricular block (AV block). The heart rate dropped from 168/min to 90/min, and the ECG showed a Wenckebach second-degree AV block and intraventricular conduction disturbances. Echocardiography demonstrated a PDA with a large left-to-right shunt and large left atrium and left ventricle with high contractility. Within several minutes after surgical closure of the PDA, the heart rate increased, and after 30 min the AV block had improved to a 1: 1 conduction ratio. Echocardiography after 2 h revealed a significant decrease of the left ventricular and atrial dimensions. Within 12 h, the AV block completely reversed together with the intraventricular conduction disturbances. We suggest that PDA with a large left-to-right shunt and left ventricular volume overload may lead to an AV block in an ELBW infant. Surgical closure of the PDA may be indicated. Copyright (C) 2007 S. Karger AG, Basel

Hydrogen-induced rupture of strained Si─O bonds in amorphous silicon dioxide

Using ab initio modeling we demonstrate that H atoms can break strained Si─O bonds in continuous amorphous silicon dioxide (a−SiO2) networks, resulting in a new defect consisting of a threefold-coordinated Si atom with an unpaired electron facing a hydroxyl group, adding to the density of dangling bond defects, such as E′ centers. The energy barriers to form this defect from interstitial H atoms range between 0.5 and 1.3 eV. This discovery of unexpected reactivity of atomic hydrogen may have significant implications for our understanding of processes in silica glass and nanoscaled silica, e.g., in porous low-permittivity insulators, and strained variants of a−SiO2

Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics

a b s t r a c t Quantized threshold voltage (VTH) relaxation transients are observed in nano-scaled field effect transistors (FETs) after bias temperature stress. The abrupt steps are due to trapping/detrapping of individual defects in the gate oxide and indicate their characteristic emission/capture times. Individual traps are studied in n-channel SiO 2 /HfSiO FETs after positive gate stress to complement previous studies performed on SiO(N). Similarly to single SiO(N) traps, strong thermal and bias dependences of the emission and capture times are demonstrated. The high-k traps have a higher density but a reduced impact on VTH due to their separation from the channel

Chiral Quark Model with Configuration Mixing

The implications of one gluon exchange generated configuration mixing in the Chiral Quark Model ($\chi$QM$_{gcm}$) with SU(3) and axial U(1) symmetry breakings are discussed in the context of proton flavor and spin structure as well as the hyperon $\beta$-decay parameters. We find that $\chi$QM$_{gcm}$ with SU(3) symmetry breaking is able to give a satisfactory unified fit for spin and quark distribution functions, with the symmetry breaking parameters $\alpha=.4$, $\beta=.7$ and the mixing angle $\phi=20^o$, both for NMC and the most recent E866 data. In particular, the agreement with data, in the case of $G_A/G_V, \Delta_8$, F, D, $f_s$ and $f_3/f_8$, is quite striking.Comment: 16 pages, LaTex, Table and Appendix adde

Effect of electric field on migration of defects in oxides: Vacancies and interstitials in bulk MgO

Dielectric layers composed of metal oxides are routinely subjected to external electric fields during the course of normal operation of electronic devices. Many phenomenological theories suggest that electric fields strongly affect the properties and mobilities of defects in oxide films and can even facilitate the creation of new defects. Although defects in metal oxides have been studied extensively both experimentally and theoretically, the effect of applied electric fields on their structure and migration barriers is not well understood and still remains subject to speculations. Here, we investigate how static, homogeneous electric fields affect migration barriers of canonical defects—oxygen vacancies and interstitial ions—in a prototypical oxide, MgO. Using the modern theory of polarization within density functional theory (DFT), we apply electric fields to defect migration pathways in three different charge states. The effect of the field is characterized by the change of the dipole moment of the system along the migration pathway. The largest changes in the calculated barriers are observed for charged defects, while those for the neutral defects are barely significant. We show that by multiplying the dipole moment difference between the initial and the transition states, which we define as the effective dipole moment, by the field strength, one can obtain an estimate of the barrier change in excellent agreement with the DFT calculated values. These results will help to assess the applicability of phenomenological models and elucidate linear and nonlinear effects of field application in degradation of microelectronic devices, electrocatalysis, batteries, and other applications

SU(4) Chiral Quark Model with Configuration Mixing

Chiral quark model with configuration mixing and broken SU(3)\times U(1) symmetry has been extended to include the contribution from c\bar c fluctuations by considering broken SU(4) instead of SU(3). The implications of such a model have been studied for quark flavor and spin distribution functions corresponding to E866 and the NMC data. The predicted parameters regarding the charm spin distribution functions, for example, \Delta c, \frac{\Delta c}{{\Delta \Sigma}}, \frac{\Delta c}{c} as well as the charm quark distribution functions, for example, \bar c, \frac{2\bar c}{(\bar u+\bar d)}, \frac{2 \bar c}{(u+d)} and \frac{(c+ \bar c)}{\sum (q+\bar q)} are in agreement with other similar calculations. Specifically, we find \Delta c=-0.009, \frac{\Delta c}{{\Delta \Sigma}}=-0.02, \bar c=0.03 and \frac{(c+ \bar c)}{\sum (q+\bar q)}=0.02 for the \chiQM parameters a=0.1, \alpha=0.4, \beta=0.7, \zeta_{E866}=-1-2 \beta, \zeta_{NMC}=-2-2 \beta and \gamma=0.3, the latter appears due to the extension of SU(3) to SU(4).Comment: 10 RevTeX pages. Accepted for publication in Phys. Rev.