Theory of Interfacial Plasmon-Phonon Scattering in Supported Graphene

One of the factors limiting electron mobility in supported graphene is remote phonon scattering. We formulate the theory of the coupling between graphene plasmon and substrate surface polar phonon (SPP) modes, and find that it leads to the formation of interfacial plasmon-phonon (IPP) modes, from which the phenomena of dynamic anti-screening and screening of remote phonons emerge. The remote phonon-limited mobilities for SiO$_{2}$, HfO$_{2}$, h-BN and Al$_{2}$O$_{3}$ substrates are computed using our theory. We find that h-BN yields the highest peak mobility, but in the practically useful high-density range the mobility in HfO$_{2}$-supported graphene is high, despite the fact that HfO$_{2}$ is a high-$\kappa$ dielectric with low-frequency modes. Our theory predicts that the strong temperature dependence of the total mobility effectively vanishes at very high carrier concentrations. The effects of polycrystallinity on IPP scattering are also discussed.Comment: 33 pages, 7 figure

Effects of Body Shape on the Drag of a 45 degree Sweptback-Wing-Body Configuration at Mach Numbers from 0.90 to 1.43

An investigation was made of the effects of body shape on the drag of a 45 deg sweptback-wing-body combination at Mach numbers from 0.90 to 1.43. Both the expansion and compression fields induced by body indentation were swept back as the stream Mach number increased from 0.94. The line of zero pressure change was generally tangent to the Mach lines associated with the local velocities over the wing and body. The strength of the induced pressure fields over the wing were attenuated with spanwise distance and the major effects were limited to the inboard 60 percent of the wing semispan. Asymmetrical body indentation tended to increase the lift on the forward portion of the wing and reduce the lift on the rearward portion. This redistribution of lift had a favorable effect on the wave drag due to lift. Symmetrical body indentation reduced the drag loading near the wing-body juncture at all Mach numbers. The reduction in drag loading increased in spanwise extent as the Mach number increased and the line of zero induced pressure became more nearly aligned with the line of maximum wing thickness. Calculations of the wave drag due to thickness, the wave drag due to lift, and the vortex drag of the basic and symmetrical M = 1.2 body and wing combinations at an angle of attack of 0 deg predicted the effects of indentation within 11 percent of the wing-basic-body drag throughout the Mach number range from 1.0 to 1.43. Calculations of the wave drag due to thickness, the wave drag due to lift, and the vortex drag for the basic, symmetrical M = 1.2, and asymmetrical M = 1.4 body and wing combinations predicted the total pressure drag to within 8 percent of the experimental value at M = 1.43

Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-kappa insulators

We present a comprehensive investigation of the low-field hole mobility in strained Ge and III-V (GaAs, GaSb, InSb, and In(1-x)Ga(x)As) p-channel inversion layers with both SiO(2) and high-kappa insulators. The valence (sub) band structure of Ge and III-V channels, relaxed and under biaxial strain (tensile and compressive) is calculated using an efficient self-consistent method based on the six-band k.p perturbation theory. The hole mobility is then computed using the Kubo-Greenwood formalism accounting for nonpolar hole-phonon scattering (acoustic and optical), surface roughness scattering, polar phonon scattering (III-Vs only), alloy scattering (alloys only) and remote phonon scattering, accounting for multisubband dielectric screening. As expected, we find that Ge and III-V semiconductors exhibit a mobility significantly larger than the "universal" Si mobility. This is true for MOS systems with either SiO(2) or high-kappa insulators, although the latter ones are found to degrade the hole mobility compared to SiO(2) due to scattering with interfacial optical phonons. In addition, III-Vs are more sensitive to the interfacial optical phonons than Ge due to the existence of the substrate polar phonons. Strain-especially biaxial tensile stress for Ge and biaxial compressive stress for III-Vs (except for GaAs) - is found to have a significant beneficial effect with both SiO(2) and HfO(2). Among strained p-channels, InSb exhibits the largest mobility enhancement. In(0.7)Ga(0.3)As also exhibits an increased hole mobility compared to Si, although the enhancement is not as large. Finally, our theoretical results are favorably compared with available experimental data for a relaxed Ge p-channel with a HfO(2) insulator. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524569

The role of electron-electron scattering in spin transport

We investigate spin transport in quasi 2DEG formed by III-V semiconductor heterojunctions using the Monte Carlo method. The results obtained with and without electron-electron scattering are compared and appreciable difference between the two is found. The electron-electron scattering leads to suppression of Dyakonov-Perel mechanism (DP) and enhancement of Elliott-Yafet mechanism (EY). Finally, spin transport in InSb and GaAs heterostructures is investigated considering both DP and EY mechanisms. While DP mechanism dominates spin decoherence in GaAs, EY mechanism is found to dominate in high mobility InSb. Our simulations predict a lower spin relaxation/decoherence rate in wide gap semiconductors which is desirable for spin transport.Comment: to appear in Journal of Applied Physic

Calculation of the electron mobility in III-V inversion layers with high-kappa dielectrics

We calculate the electron mobility for a metal-oxide-semiconductor system with a metallic gate, high-kappa dielectric layer, and III-V substrate, including scattering with longitudinal-optical (LO) polar-phonons of the III-V substrate and with the interfacial excitations resulting from the coupling of insulator and substrate optical modes among themselves and with substrate plasmons. In treating scattering with the substrate LO-modes, multisubband dynamic screening is included and compared to the dielectric screening in the static limit and with the commonly used screening model obtained by defining an effective screening wave vector. The electron mobility components limited by substrate LO phonons and interfacial modes are calculated for In0.53Ga0.47As and GaAs substrates with SiO2 and HfO2 gate dielectrics. The mobility components limited by the LO-modes and interfacial phonons are also investigated as a function of temperature. Scattering with surface roughness, fixed interface charge, and nonpolar-phonons is also included to judge the relative impact of each scattering mechanism in the total mobility for In0.53Ga0.47As with HfO2 gate dielectric. We show that InGaAs is affected by interfacial-phonon scattering to an extent larger than Si, lowering the expected performance, but probably not enough to question the technological relevance of InGaAs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3500553

A Discrete State Transition Algorithm for Generalized Traveling Salesman Problem

Generalized traveling salesman problem (GTSP) is an extension of classical traveling salesman problem (TSP), which is a combinatorial optimization problem and an NP-hard problem. In this paper, an efficient discrete state transition algorithm (DSTA) for GTSP is proposed, where a new local search operator named \textit{K-circle}, directed by neighborhood information in space, has been introduced to DSTA to shrink search space and strengthen search ability. A novel robust update mechanism, restore in probability and risk in probability (Double R-Probability), is used in our work to escape from local minima. The proposed algorithm is tested on a set of GTSP instances. Compared with other heuristics, experimental results have demonstrated the effectiveness and strong adaptability of DSTA and also show that DSTA has better search ability than its competitors.Comment: 8 pages, 1 figur

Spin diffusion/transport in nn-type GaAs quantum wells

The spin diffusion/transport in $n$-type (001) GaAs quantum well at high temperatures ($\ge120$ K) is studied by setting up and numerically solving the kinetic spin Bloch equations together with the Poisson equation self-consistently. All the scattering, especially the electron-electron Coulomb scattering, is explicitly included and solved in the theory. This enables us to study the system far away from the equilibrium, such as the hot-electron effect induced by the external electric field parallel to the quantum well. We find that the spin polarization/coherence oscillates along the transport direction even when there is no external magnetic field. We show that when the scattering is strong enough, electron spins with different momentums oscillate in the same phase which leads to equal transversal spin injection length and ensemble transversal injection length. It is also shown that the intrinsic scattering is already strong enough for such a phenomena. The oscillation period is almost independent on the external electric field which is in agreement with the latest experiment in bulk system at very low temperature [Europhys. Lett. {\bf 75}, 597 (2006)]. The spin relaxation/dephasing along the diffusion/transport can be well understood by the inhomogeneous broadening, which is caused by the momentum-dependent diffusion and the spin-orbit coupling, and the scattering. The scattering, temperature, quantum well width and external magnetic/electric field dependence of the spin diffusion is studied in detail.Comment: 12 pages, 6 figures, to be published in J Appl. Phy

Relation Between Einstein And Quantum Field Equations

We show that there exists a choice of scalar field modes, such that the evolution of the quantum field in the zero-mass and large-mass limits is consistent with the Einstein equations for the background geometry. This choice of modes is also consistent with zero production of these particles and thus corresponds to a preferred vacuum state preserved by the evolution. In the zero-mass limit, we find that the quantum field equation implies the Einstein equation for the scale factor of a radiation-dominated universe; in the large-mass case, it implies the corresponding Einstein equation for a matter-dominated universe. Conversely, if the classical radiation-dominated or matter-dominated Einstein equations hold, there is no production of scalar particles in the zero and large mass limits, respectively. The suppression of particle production in the large mass limit is over and above the expected suppression at large mass. Our results hold for a certain class of conformally ultrastatic background geometries and therefore generalize previous results by one of us for spatially flat Robertson-Walker background geometries. In these geometries, we find that the temporal part of the graviton equations reduces to the temporal equation for a massless minimally coupled scalar field, and therefore the results for massless particle production hold also for gravitons. Within the class of modes we study, we also find that the requirement of zero production of massless scalar particles is not consistent with a non-zero cosmological constant. Possible implications are discussed.Comment: Latex, 24 pages. Minor changes in text from original versio