22,445 research outputs found
Experimental and theoretical electronic structure of EuRh2As2
The Fermi surfaces (FS's) and band dispersions of EuRh2As2 have been
investigated using angle-resolved photoemission spectroscopy. The results in
the high-temperature paramagnetic state are in good agreement with the full
potential linearized augmented plane wave calculations, especially in the
context of the shape of the two-dimensional FS's and band dispersion around the
Gamma (0,0) and X (pi,pi) points. Interesting changes in band folding are
predicted by the theoretical calculations below the magnetic transition
temperature Tn=47K. However, by comparing the FS's measured at 60K and 40K, we
did not observe any signature of this transition at the Fermi energy indicating
a very weak coupling of the electrons to the ordered magnetic moments or strong
fluctuations. Furthermore, the FS does not change across the temperature (~
25K) where changes are observed in the Hall coefficient. Notably, the Fermi
surface deviates drastically from the usual FS of the superconducting
iron-based AFe2As2 parent compounds, including the absence of nesting between
the Gamma and X FS pockets.Comment: 4 pages, 4 figure
Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
We have studied terahertz (THz) emission from arsenic-ion implanted GaAs both
experimentally and using a three-dimensional carrier dynamics simulation. A
uniform density of vacancies was formed over the optical absorption depth of
bulk GaAs samples by performing multi-energy implantations of arsenic ions (1
and 2.4MeV) and subsequent thermal annealing. In a series of THz emission
experiments the frequency of peak THz power was found to increase significantly
from 1.4 to 2.2THz when the ion implantation dose was increased from 10^13 to
10^16 cm-3. We used a semi-classical Monte-Carlo simulation of ultra-fast
carrier dynamics to reproduce and explain these results. The effect of the
ion-induced damage was included in the simulation by considering carrier
scattering at neutral and charged impurities, as well as carrier trapping at
defect sites. Higher vacancy concentrations and shorter carrier trapping times
both contributed to shorter simulated THz pulses, the latter being more
important over experimentally realistic parameter ranges.Comment: 6 pages, 7 figure
Astronomy using basic Mark 2 very long baseline interferometry
Two experiments were performed in April and September 1976 to determine precise positions of radio sources using conventional Mark 2 VLBI techniques. Four stations in the continental United States observed at a wavelength of 18 cm. The recording bandwidth was 2 MHz. The preliminary results using analyses of fringe rate and delay are discussed and the source positions compared with the results of other measurements
Physical Properties of Metallic Antiferromagnetic CaCo{1.86}As2 Single Crystals
We report studies of CaCo{1.86}As2 single crystals. The electronic structure
is probed by angle-resolved photoemission spectroscopy (ARPES) measurements of
CaCo{1.86}As2 and by full-potential linearized augmented-plane-wave
calculations for the supercell Ca8Co15As16 (CaCo{1.88}As2). Our XRD crystal
structure refinement is consistent with the previous combined refinement of
x-ray and neutron powder diffraction data showing a collapsed-tetragonal
ThCr2Si2-type structure with 7(1)% vacancies on the Co sites corresponding to
the composition CaCo{1.86}As2 [D. G. Quirinale et al., Phys. Rev. B 88, 174420
(2013)]. The anisotropic magnetic susceptibility chi(T) data are consistent
with the magnetic neutron diffraction data of Quirianale et al. that
demonstrate the presence of A-type collinear antiferromagnetic order below the
Neel temperature TN = 52(1) K with the easy axis being the tetragonal c axis.
However, no clear evidence from the resistivity rho(T) and heat capacity Cp(T)
data for a magnetic transition at TN is observed. A metallic ground state is
demonstrated from band calculations and the rho(T), Cp(T) and ARPES data, and
spin-polarized calculations indicate a competition between the A-type AFM and
FM ground states. The Cp(T) data exhibit a large Sommerfield electronic
coefficient reflecting a large density of states at the Fermi energy D(EF),
consistent with the band structure calculations which also indicate a large
D(EF) arising from Co 3d bands. At 1.8 K the M(H) data for H|| c exhibit a
well-defined first-order spin-flop transition at an applied field of 3.5 T. The
small ordered moment of 0.3 muB/Co obtained from the M(H) data at low T, the
large exchange enhancement of chi and the lack of a self-consistent
interpretation of the chi(T) and M(H,T) data in terms of a local moment
Heisenberg model together indicate that the magnetism of CaCo{1.86}As2 is
itinerant.Comment: 18 pages, 15 figures, 4 tables, 61 references; v2: extended the fits
of experimental data by additional electronic structure calculations;
published versio
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