Demonstration of InAsBi photoresponse beyond 3.5 μm

An Indium Arsenide Bismide photodiode has been grown, fabricated, and characterized to evaluate its performance in the Mid Wave Infrared region of the spectrum. Spectral response from the diode has been obtained up to a diode temperature of 225 K. At this temperature, the diode has a cut off wavelength of 3.95 μm, compared to 3.41 μm in a reference Indium Arsenide diode, indicating that Bismuth has been incorporated to reduce the band gap of Indium Arsenide by 75 meV. Similar band gap reduction was deduced from the cut off wavelength comparison at 77 K. From the dark current data, shunt resistance values of 8 and 39 Ω at temperatures of 77 and 290 K, respectively, were obtained in our photodiode

Potential process 'hurdles' in the use of macroalgae as feedstock for biofuel production in the British Isles

This review examines the potential technical and energy balance hurdles in the production of seaweed biofuel, and particular for the MacroBioCrude processing pipeline for the sustainable manufacture of liquid hydrocarbon fuels from seaweed in the UK. The production of biofuel from seaweed is economically, energetically and technically challenging at scale. Any successful process appears to require both a method of preserving the seaweed for continuous feedstock availability and a method exploiting the entire biomass. Ensiling and gasification offer a potential solution to these two requirements. However there is need for more data particularly at a commercial scal

GaSbBi alloys and heterostructures: fabrication and properties

International audienceDilute bismuth (Bi) III-V alloys have recently attracted great attention, due to their properties of band-gap reduction and spin-orbit splitting. The incorporation of Bi into antimonide based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2-5 µm). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This book chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures