Nucleation and Growth of GaN/AlN Quantum Dots

We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN(0001) in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage. We show that the GaN growth passes four stages: initially, the growth is layer-by-layer; subsequently, two-dimensional precursor islands form, which transform into genuine three-dimensional islands. During the latter stage, island height and density increase with GaN coverage until the density saturates. During further GaN growth, the density remains constant and a bimodal height distribution appears. The variation of island height and density as a function of substrate temperature is discussed in the framework of an equilibrium model for Stranski-Krastanov growth.Comment: Submitted to PRB, 10 pages, 15 figure

Spin injection from perpendicular magnetized ferromagnetic δ\delta-MnGa into (Al,Ga)As heterostructures

Electrical spin injection from ferromagnetic $\delta$-MnGa into an (Al,Ga)As p-i-n light emitting diode (LED) is demonstrated. The $\delta$-MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin injection at remanence without an applied magnetic field. The bias and temperature dependence of the spin injection are found to be qualitatively similar to Fe-based spin LED devices. A Hanle effect is observed and demonstrates complete depolarization of spins in the semiconductor in a transverse magnetic field.Comment: 4 pages, 3 figure

Growth and optical properties of GaN/AlN quantum wells

We demonstrate the growth of GaN/AlN quantum well structures by plasma-assisted molecular-beam epitaxy by taking advantage of the surfactant effect of Ga. The GaN/AlN quantum wells show photoluminescence emission with photon energies in the range between 4.2 and 2.3 eV for well widths between 0.7 and 2.6 nm, respectively. An internal electric field strength of $9.2\pm 1.0$ MV/cm is deduced from the dependence of the emission energy on the well width.Comment: Submitted to AP

Searching for physics beyond the Standard Model through the dipole interaction

The magnetic dipole interaction played a central role in the development of QED, and continued in that role for the Standard Model. The muon anomalous magnetic moment has served as a benchmark for models of new physics, and the present experimental value is larger than the standard-model value by more than three standard deviations. The electric dipole moment (EDM) violates parity ({$P$}) and time-reversal ({$T$}) symmetries, and in the context of the $CPT$ theorem, the combination of charge conjugation and parity ($CP$). Since a new source of {$CP$} violation outside of that observed in the $K$ and $B$ meson systems is needed to help explain the baryon asymmetry of the universe, searches for EDMs are being carried out worldwide on a number of systems. The standard-model value of the EDM is immeasurably small, so any evidence for an EDM would signify the observation of new physics. Unique opportunities exist for EDM searches using polarized proton, deuteron or muon beams in storage rings. This talk will provide an overview of the theory of dipole moments, and the relevant experiments. The connection to the transition dipole moment that could produce lepton flavor violating interactions such as $\mu^+ \rightarrow e^+ \gamma$ is also mentioned.Comment: Invited Plenary talk at the 19th International Spin Physics Symposium, Juelic

Self-assembled zinc blende GaN quantum dots grown

Zinc blende ~ZB! GaN quantum dots have been grown by plasma-assisted molecular-beam epitaxy on AlN buffer layers using 3C-SiC~001! substrates. The two- to three-dimensional growth mode transition is studied by following the evolution of the reflection high-energy electron diffraction pattern. ZB GaN island layers are further examined by atomic force microscopy and transmission electron microscopy, extracting a mean island height of 1.6 nm and a mean diameter of 13 nm at a density of 1.331011 cm22. Embedded ZB GaN quantum dots show strong ultraviolet photoluminescence without any thermal quenching up to room temperature.SFERERegion Rhône-AlpesConsejo Nacional de Ciencia y Tecnologí