M-line spectroscopic, spectroscopic ellipsometric and microscopic measurements of optical waveguides fabricated by MeV-energy N+ ion irradiation for telecom applications

Irradiation with N+ ions of the 1.5 - 3.5 MeV energy range was applied to optical waveguide formation. Planar and channel waveguides have been fabricated in an Er-doped tungsten-tellurite glass, and in both types of bismuth germanate (BGO) crystals: Bi4Ge3O12 (eulytine) and Bi12GeO20 (sillenite). Multi-wavelength m-line spectroscopy and spectroscopic ellipsometry were used for the characterisation of the ion beam irradiated waveguides. Planar waveguides fabricated in the Er-doped tungsten-tellurite glass using irradiation with N+ ions at 3.5 MeV worked even at the 1550 nm telecommunication wavelength. 3.5 MeV N+ ion irradiated planar waveguides in eulytine-type BGO worked up to 1550 nm and those in sillenite-type BGO worked up to 1330 nm

Potassium currents in the heart: functional roles in repolarization, arrhythmia and therapeutics

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Leaky mode suppression in planar optical waveguides written in Er:TeO2–WO3 glass and CaF2 crystal via double energy implantation with MeV N+ ions

Ion implantation proved to be an universal technique for producing waveguides in most optical materials. Tellurite glasses are good hosts of rare-earth elements for the development of fibre and integrated optical amplifiers and lasers covering all the main telecommunication bands. Er 3+ -doped tellurite glasses are good candidates for the fabrication of broadband amplifiers in wavelength division multiplexing around 1.55 l m, as they exhibit large stimulated cross sections and broad emission bandwidth. Calcium fluoride is an excellent optical material, due to its perfect optical characteristics from UV wavelengths up to near IR. It has become a promising laser host material (doped with rare earth elements). Ion implantation was also applied to optical waveguide fabrication in CaF 2 and other halide crystals. In the present work first single-energy implantations at 3.5 MeV at various fluences were applied. Waveguide operation up to 1.5 l m was observed in Er:Te glass, and up to 980 nm in CaF 2 . Then double-energy implantations at a fixed upper energy of 3.5 MeV and lower energies between 2.5 and 3.2 MeV were performed to suppress leaky modes by increasing barrier width