A Compact Silicon-on-insulator Polarization Splitter

Cataloged from PDF version of article.A compact directional coupler-based polarization splitter is designed and realized using silicon-on-insulator (SOI) waveguides. Even though silicon does not have any material birefringence, the high index contrast obtained in the SOI platform and reduced waveguide dimensions makes it possible to induce significant birefringence. Polarization splitting is achieved by making use of this geometry-induced birefringence. In this work, we demonstrate polarization splitting in devices as short as 120 gm. Even smaller devices can be made using submicron-thick Si waveguides

Low-Power Thermooptical Tuning of SOI Resonator Switch

Cataloged from PDF version of article.A wavelength selective optical switch is developed based on a high-Q racetrack resonator making use of the large thermooptic coefficient of silicon. The racetrack resonator was fabricated using a silicon-on-insulator (SOI) single-mode rib waveguide. The resonator shows a high Q factor of 38000 with spectral sidelobes of 11 dB down and can be thermooptically scanned over its full free-spectral range applying only 57 mW of electrical power. A low power of 17 mW is enough to tune the device from resonance to off-resonance state. The device functions as a wavelength selective optical switch with a 3-dB cutoff frequency of 210 kHz

Polarization Characteristics of Compact SOI Rib Waveguide RaceTrack Resonators

Cataloged from PDF version of article.We report on the development of compact optical racetrack resonators on silicon-on-insulator (SOI) rib waveguides. We make use of large-cross-section waveguides instead of photonic wire waveguides. We fabricated resonators with bending radii down to 20 mu m and characterized for both transverse-electric and transverse-magnetic polarizations. Different polarization characteristics were analyzed and related to the modal shape of the SOI waveguide. These compact resonators show large free spectral ranges (3.0 nm), high finesse (19), and Q-factor (28 000) values

Low temperature photoluminescence spectra of layered semiconductor TlGaS2

Cataloged from PDF version of article.Photoluminescence (PL) spectra of TlGaS2 layered single crystals were studied in the wavelength region 500-860 nm and in the temperature range 9.5-293 K. We observed a total of three PL bands centered at 568 nm (2.183 eV, A-band), 718 nm (1.727 eV, B-band) and 780 nm (1.590 eV, C-band) at various temperatures. We have also studied the variations of the A- and B-band intensities vs excitation laser density in the range from 7 × 10-2 to 9 W cm-2. The A- and B-bands were found to be due to radiative transitions from the deep donor levels located at 0.362 and 0.738 eV below the bottom of the conduction band to the shallow acceptor levels at 0.005 and 0.085 eV located above the top of the valence band, respectively. The proposed energy-level diagram permits us to interpret the recombination processes in TlGaS2 layered single crystals. © 1997 Elsevier Science Ltd

Temperature dependence of the Raman-active phonon frequencies in indium sulfide

Cataloged from PDF version of article.The temperature dependence of the Raman-active mode frequencies in indium sulfide was measured in the range from 10 to 300 K. The analysis of the temperature dependence of the A(g) intralayer optical modes show that Raman frequency shift results from the change of harmonic frequency with volume expansion and anharmonic coupling to phonons of other branches. The pure-temperature contribution (phonon-phonon coupling) is due to three- and four-phonon processes. (C) 1999 Elsevier Science Ltd. All rights reserved

Comparison of Electron and Hole Charge-Discharge Dynamics in Germanium Nanocrystal Flash Memories

Cataloged from PDF version of article.Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents are observed to differ significantly and depend on annealing conditions chosen for the formation of nanocrystals. At low annealing temperatures, holes are seen to charge slower but to escape faster than electrons. They discharge slower than electrons when annealing temperatures are raised. The results suggest that discharge currents are dominated by the interface layer acting as a quantum well for holes and by direct tunneling for elec-trons. (c) 2008 American Institute of Physics

Donor-acceptor pair recombination in AgIn5S8 single crystals

Cataloged from PDF version of article.Photoluminescence (PL) spectra of AgIn5S8 single crystals were investigated in the 1.44-1.91 eV energy region and in the 10-170 K temperature range. The PL band was observed to be centered at 1.65 eV at 10 K and an excitation intensity of 0.97 W cm(-2). The redshift of this band with increasing temperature and with decreasing excitation intensity was observed. To explain the observed PL behavior, we propose that the emission is due to radiative recombination of a donor-acceptor pair, with an electron occupying a donor level located at 0.06 eV below the conduction band, and a hole occupying an acceptor level located at 0.32 eV above the valence band. (C) 1999 American Institute of Physics

Pressure sensing using micromachined asymmetric integrated vertical coupler

Analysis of a novel pressure sensor based on a SOI asymmetric vertical coupler is presented. The integrated optical component is a coupler composed of a single mode low index waveguide and a thin silicon slab

Novel integrated optical displacement sensor for scanning force microscopies

A novel displacement sensor for scanning force microscoples using an integrated optical micro-ring resonator is described. Device operates by monitoring the changes in transmission spectrum of micro-ring resonator. This design provides sensitivities about ∼10-4 Å-1

Integrated micro ring resonator displacement sensor for scanning probe microscopies

We describe a novel displacement sensor for scanning probe microscopies using an integrated optical micro ring resonator. This device operates by means of monitoring the changes in the transmission spectrum of a high finesse micro ring resonator. Finite element method simulations were carried out to obtain the optimum sensor design and finite difference time domain simulation was used to obtain the transfer characteristics of micro ring resonators. Operation principles and sensitivity calculations are discussed in detail. To achieve high sensitivity, we have studied different types of ring resonator. The highest sensitivity is obtained in a race-track resonator. This new design should provide sensitivities as high as ∼10 -4 Å -1