Low-temperature ion beam mixing of Pt and Si markers in Ge

The mixing of Pt and Si marker atoms in Ge during 750-keV Xe irradiation was measured at temperatures between 6 and 500 K. The low-temperature measurements show that the mixing parameter for Pt is nearly twice that for Si. This result is in strong contradiction to the collisional theory of ion beam mixing. A weak temperature dependence in the mixing is found for both markers

Strong mass effect on ion beam mixing in metal bilayers

Molecular dynamics simulations have been used to study the mechanism of ion beam mixing in metal bilayers. We are able to explain the ion induced low-temperature phase stability and melting behavior of bilayers using only a simple ballistic picture up to 10 keV ion energies. The atomic mass ratio of the overlayer and the substrate constituents seems to be a key quantity in understanding atomic mixing. The critical bilayer mass ratio of $\delta < 0.33$ is required for the occurrence of a thermal spike (local melting) with a lifetime of $\tau > 0.3$ ps at low-energy ion irradiation (1 keV) due to a ballistic mechanism. The existing experimental data follow the same trend as the simulated values.Comment: 4 pages, 4 figures, preprin

Convection-induced compositional patterning at grain boundaries in irradiated alloys

We consider the stability of precipitates formed at grain boundaries (GBs) by radiation-induced segregation in dilute alloys subjected to irradiation. The effects of grain size and misorientation of symmetric-tilt GBs are quantified using phase field modeling. A novel regime is identified where, at long times, GBs are decorated by precipitate patterns that resist coarsening. Maps of the diffusional P\'eclet number indicate that arrested coarsening takes place when solute advection dominates over thermal diffusion right up to the precipitate/matrix interface, overwhelming capillary effects. This contrasts with liquid-solid mixtures where convection only accelerates coarsening.Comment: 29 pages, main text with 3 figures, 1 table, 1 supplemental information documen

Cooperative mixing induced surface roughening in bilayer metals: a possible novel surface damage mechanism

Molecular dynamics simulations have been used to study a collective atomic transport phenomenon by repeated Ar$^+$ irradiations in the Ti/Pt interfacial system. The ion-induced injection of surface atoms to the bulk, the ejection of bulk atoms to the top layers together with surface erosion is strongly enhanced by interfacial mixing. This process leads to a dense interfacial material, and broadening of the interface region. The process scales with the relative difference of the atomic masses. We find that surface roughening and interfacial mixing is strongly coupled via an enhanced counterflow material transport normal to the surface which might be a novel surface damage mechanism. This cooperative phenomenon is active when the bilayer system is subjected to a high dose ion irradiation (multiple ion irradiations) and leads to surface cavity growth.Comment: 6 pages, 6 figures. accepted in Nucl. Instrum. Meth.

Does the thermal spike affect low-energy ion-induced interfacial mixing?

Molecular dynamics simulations have been used to obtain the three-dimensional distribution of interfacial mixing and cascade defects in Ti/Pt multilayer system due to single 1 keV $Ar^+$ impacts at grazing angle of incidence. The Ti/Pt system was chosen because of its relatively high heat of mixing in the binary alloy and therefore a suitable candidate for testing the effect of heat of mixing on ion-beam mixing. However, the calculated mixing profile is not sensitive to the heat of mixing. Therefore the thermal spike model of mixing is not fully supported under these irradiation conditions. Instead we found that the majority of mixing occurs after the thermal spike during the relaxation process. These conclusions are supported by liquid, vacancy as well as adatom analysis. The interfacial mixing is in various aspects anomalous in this system: the time evolution of mixing is leading to a phase delay for Ti mixing, and Pt exhibits an unexpected double peaked mixing evolution. The reasons to these effects are discussed.Comment: 7 pages, 12 figures, Nucl. Instr. Meth. B211, 524. (2003

Ion-irradiation-assisted tuning of phase transformations and physical properties in single crystalline Fe7Pd3ferromagnetic shape memory alloy thin films

Control of multi-martensite phase transformations and physical properties constitute greatly unresolved challenges in Fe7Pd3-based ferromagnetic shape memory alloys. Single crystalline Fe7Pd3 thin films reveal an austenite to martensite phase transformation, continuously ranging from the face-centered cubic (fcc) to the face-centered tetragonal (fct) and body-centered cubic (bcc) phases upon irradiation with 1.8 MeV Kr+ ions. Within the present contribution, we explore this scenario within a comprehensive experimental study: employing atomic force microscopy (AFM) and high resolution transmission electron microscopy (HR-TEM), we first clarify the crystallography of the ion-irradiation-induced austenite $\Rightarrow$ martensite and inter-martensite transitions, explore the multi-variant martensite structures with c-a twinning and unravel a very gradual transition between variants at twin boundaries. Accompanying magnetic properties, addressed locally and globally, are characterized by an increasing saturation magnetization from fcc to bcc, while coercivity and remanence are demonstrated to be governed by magnetocrystalline anisotropy and ion-irradiation-induced defect density, respectively. Based on reversibility of ion-irradiation-induced materials changes due to annealing treatment and a conversion electron Mößbauer spectroscopy (CEMS) study to address changes in order, a quantitative defect-based physical picture of ion-irradiation-induced austenite ⇔ martensite transformation in Fe7Pd3 is developed. The presented concepts thus pave the way for ion-irradiation-assisted optimization strategies for tailored functional alloys

Ion-irradiation-assisted tuning of phase transformations and physical properties in single crystalline Fe₇Pd₃ ferromagnetic shape memory alloy thin films

Control of multi-martensite phase transformations and physical properties constitute greatly unresolved challenges in Fe7Pd3-based ferromagnetic shape memory alloys. Single crystalline Fe7Pd3 thin films reveal an austenite to martensite phase transformation, continuously ranging from the facecentered cubic (fcc) to the face-centered tetragonal (fct) and body-centered cubic (bcc) phases upon irradiation with 1.8 MeV Kr+ ions. Within the present contribution, we explore this scenario within a comprehensive experimental study: employing atomic force microscopy (AFM) and high resolution transmission electron microscopy (HR-TEM), we first clarify the crystallography of the ionirradiation-induced austenite⇒martensite and inter-martensite transitions, explore the multivariant martensite structures with c-a twinning and unravel a very gradual transition between variants at twin boundaries. Accompanying magnetic properties, addressed locally and globally, are characterized by an increasing saturation magnetization from fcc to bcc, while coercivity and remanence are demonstrated to be governed by magnetocrystalline anisotropy and ion-irradiationinduced defect density, respectively. Based on reversibility of ion-irradiation-induced materials changes due to annealing treatment and a conversion electron Mößbauer spectroscopy (CEMS) study to address changes in order, a quantitative defect-based physical picture of ion-irradiation-induced austenite⇔martensite transformation in Fe7Pd3 is developed. The presented concepts thus pave the way for ion-irradiation-assisted optimization strategies for tailored functional alloys

Crystalline-to-amorphous phase transition in irradiated silicon

The amorphous(a)-to-crystalline (c) phase transition has been studied in electron(e ) and/or ion irradiated silicon (Si). The irradiations were performed in situ in the Argonne High Voltage Microscope-Tandem Facility. The irradiation of Si, at <10K, with 1-MeV e to a fluence of 14 dpa failed to induce the c-to-a transition. Whereas an irradiation, at <10K, with 1.0 or 1.5-MeV Kr+ ions induced the c-to-a transition by a fluence of approx.0.37 dpa. Alternatively a dual irradiation, at 10K, with 1.0-MeV e and 1.0 or 1.5-MeV Kr+ to a Kr+ fluence of 1.5 dpa - where the ratio of the displacement rates for e to ions was approx.0.5 - resulted in the Si specimen retaining a degree of crystallinity. These results are discussed in terms of the degree of dispersion of point defects in the primary state of damage and the mobilities of point defects

Mechanism and kinetics of radiation-induced segregation in Ni-Si alloys

Rutherford-backscattering and Auger chemical-depth-profiling measurements show that films of the ..gamma..'-Ni/sub 3/Si phase produced on the ion-bombarded surfaces of Ni-Si alloys obey simple parabolic growth kinetics. At low temperatures the film growth-rate constant exhibits Arrhenius behavior and varies with the fourth root of the dose rate. The apparent activation energy in this low-temperature region is approx. 0.3 eV. At high temperatures the growth constant is independent of the dose rate. The results are consistent with a diffusion-controlled growth model, which assumes Si atoms migrate in the form of a fast-diffusing Si-interstitial complex