Direct imprinting of organic-inorganic hybrid materials into high aspect ratio sub-100nm structures

The challenging fabrication of sub-100-nm structures with high aspect ratio by UV-nanoimprint lithography (NIL) is addressed in this work. Thermal shrinkage is induced by cooling the structures below room temperature to avoid the issues commonly arising during the release of the polymeric nanostructures from the master. The UV-NIL has been performed to obtain OrmoComp® nanostructures using OrmoStamp® working stamps copied from Si masters. Nanoridges and nanopillars with 45nm width and 380nm thickness have been fabricated with a corresponding aspect ratio of 8.5. This is, to the best of our knowledge, the highest aspect ratio achieved using organic-inorganic hybrid materials at the sub-100-nm scale

Selective formation of tungsten nanowires

We report on a process for fabricating self-aligned tungsten (W) nanowires with polycrystalline silicon core. Tungsten nanowires as thin as 10 nm were formed by utilizing polysilicon sidewall transfer technology followed by selective deposition of tungsten by chemical vapor deposition (CVD) using WF6 as the precursor. With selective CVD, the process is self-limiting whereby the tungsten formation is confined to the polysilicon regions; hence, the nanowires are formed without the need for lithography or for additional processing. The fabricated tungsten nanowires were observed to be perfectly aligned, showing 100% selectivity to polysilicon and can be made to be electrically isolated from one another. The electrical conductivity of the nanowires was characterized to determine the effect of its physical dimensions. The conductivity for the tungsten nanowires were found to be 40% higher when compared to doped polysilicon nanowires of similar dimensions

Reliable Circuit Design with Nanowire Arrays

The emergence of different fabrication techniques of silicon nanowires (SiNWs) raises the question of finding a suitable architectural organization of circuits based on them. Despite the possibility of building conventional CMOS circuits with SiNWs, the ability to arrange them into regular arrays, called crossbars, offers the opportunity to achieve higher integration densities. In such arrays, molecular switches or phase-change materials are grafted at the crosspoints, i.e., the crossing nanowires, in order to perform computation or storage. Given the fact that the technology is not mature, a hybridization of CMOS circuits with nanowire arrays seems to be the most promising approach. This chapter addresses the impact of variability on the nanowires in circuit designs based on the hybrid CMOS-SiNW crossbar approach

Direct imprinting of organic-inorganic hybrid materials into high aspect ratio sub-100 nm structures

The challenging fabrication of sub-100-nm structures with high aspect ratio by UV-nanoimprint lithography (NIL) is addressed in this work. Thermal shrinkage is induced by cooling the structures below room temperature to avoid the issues commonly arising during the release of the polymeric nanostructures from the master. The UV-NIL has been performed to obtain OrmoComp(A (R)) nanostructures using OrmoStamp(A (R)) working stamps copied from Si masters. Nanoridges and nanopillars with 45 nm width and 380 nm thickness have been fabricated with a corresponding aspect ratio of 8.5. This is, to the best of our knowledge, the highest aspect ratio achieved using organic-inorganic hybrid materials at the sub-100-nm scale

One-step fabrication of high refractive index inorganic nanostructures

Direct printing of spin-on functional films is probably the most efficient method to develop low-cost novel photonic nanodevices, such as diffraction gratings, planar waveguides, nano- lasers, and antireflective coatings. For these applications high refractive index transparent materials are demanded; however, this class of materials generally requires inorganic oxides, well known for their hardness, typical of ceramic materials, and so incompatible with a soft character of printable resins. Herein, inorganic high refractive index TiO2 micro- and nano- structures, with unusual depth up to 600 nm and aspect ratio larger than 5, are obtained by combining thermal nanoimprint lithography (NIL) with UV curing. To achieve printed patterns, a hybrid organic-inorganic spin-on film is deposited at low-temperature by sol-gel processing. Two distinct bottomup synthetic approaches are used, called in situ and ex situ, using titanium isopropoxide (90%) or TiO2 anatase nanoparticles (70%), respectively, and adding a silica sol modified by organic moieties. The two syntheses were optimized to obtain, after patterning by thermal imprint, amorphous or crystalline titania crack-free micro- and nano- patterns for in situ and ex situ, respectively. The further UV irradiation converts imprinted films to totally inorganic patterns, through the titania photocatalytic effect, allowing refractive indexes up to 1.82 at 632 nm to be achieved. This novel strategy of combining thermal imprint with UV exposure allows inorganic deep patterns to be fabricated without a calcination step, which is generally needed for inorganic resists processing. Eventually, a thermal treatment only at 300 degrees C can be applied to achieve a final refractive index of 2 at 632 nm.[GRAPHICS]