Modeling Light Trapping in Nanostructured Solar Cells

The integration of nanophotonic and plasmonic structures with solar cells offers the ability to control and confine light in nanoscale dimensions. These nanostructures can be used to couple incident sunlight into both localized and guided modes, enhancing absorption while reducing the quantity of material. Here we use electromagnetic modeling to study the resonances in a solar cell containing both plasmonic metal back contacts and nanostructured semiconductor top contacts, identify the local and guided modes contributing to enhanced absorption, and optimize the design. We then study the role of the different interfaces and show that Al is a viable plasmonic back contact material

Plasmonic Nanostructure Design for Efficient Light Coupling into Solar Cells

We demonstrate that subwavelength scatterers can couple sunlight into guided modes in thin film Si and GaAs plasmonic solar cells whose back interface is coated with a corrugated metal film. Using numerical simulations, we find that incoupling of sunlight is remarkably insensitive to incident angle, and that the spectral features of the coupling efficiency originate from several different resonant phenomena. The incoupling cross section can be spectrally tuned and enhanced through modification of the scatterer shape, semiconductor film thickness, and materials choice. We demonstrate that, for example, a single 100 nm wide groove under a 200 nm Si thin film can enhance absorption by a factor of 2.5 over a 10 μm area for the portion of the solar spectrum near the Si band gap. These findings show promise for the design of ultrathin solar cells that exhibit enhanced absorption

Enhancing the Radiative Rate in III-V Semiconductor Plasmonic Core-Shell Nanowire Resonators

We investigate the radiative properties of plasmonic core-shell nanowire resonators and, using boundary element method calculations, demonstrate enhanced radiative decay rate by up to 3500 times in nanoscale compound semi-conductor/metal cavities. Calculation of the local density of optical states enables identification of new types of modes in cavities with mode volumes on the order of 10^(-4)(λ/n)^3. These modes dramatically enhance the radiative decay rate and significantly modify the polarization of far-field emission

Microphotonic parabolic light directors fabricated by two-photon lithography

We have fabricated microphotonic parabolic light directors using two-photon lithography, thin-film processing, and aperture formation by focused ion beam lithography. Optical transmission measurements through upright parabolic directors 22 μm high and 10 μm in diameter exhibit strong beam directivity with a beam divergence of 5.6°, in reasonable agreement with ray-tracing and full-field electromagnetic simulations. The results indicate the suitability of microphotonic parabolic light directors for producing collimated beams for applications in advanced solar cell and light-emitting diode designs

GaAs monolithic frequency doublers with series connected varactor diodes

GaAs monolithic frequency doublers using series connected varactor diodes have been fabricated for the first time. Output powers of 150 mW at 36.9 GHz with 24% efficiency and 300 mW at 24.8 GHz with 18% efficiency have been obtained. Peak efficiencies of 35% at output power levels near 100 mW have been achieved at both frequencies. Both K-band and Ka-band frequency doublers are derived from a lower power, single-diode design by series connection of two diodes and scaling to achieve different power and frequency specifications. Their fabrication was accomplished using the same process sequence

A computationally efficient simulation method for optimizing front contacts of concentrator multijunction solar cells

In this work, a novel multidiode model is proposed for optimizing the front grid of multijunction solar cells operating under concentration conditions. The model allows for quickly exploring the maximum achievable efficiency under a wide range of operating conditions and design parameters such as the redirecting capability, period and width of the fingers, the light concentration, and the metal and emitter sheet resistivity. The proposed multidiode model shows to be consistent with experimental data and with more complex modeling approaches such as the simulation program with integrated circuit emphasis (SPICE) model

Kinetics governing phase separation of nanostructured Sn_xGe_(1–x) alloys

We have studied the dynamic phenomenon of Sn_xGe_(1–x)/Ge phase separation during deposition by molecular beam epitaxy on Ge(001) substrates. Phase separation leads to the formation of direct band gap semiconductor nanowire arrays embedded in Ge oriented along the [001] growth direction. The effect of strain and composition on the periodicity were decoupled by growth on Ge(001) and partially relaxed Si_yGe_(1–y)/Ge(001) virtual substrates. The experimental results are compared with three linear instability models of strained film growth and find good agreement with only one of the models for phase separation during dynamic growth

Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation

Si nanocrystals (diameter 2–5 nm) were formed by 35 keV Si + implantation at a fluence of 6 × 1016 Si/cm2 into a 100 nm thick thermally grown SiO2 film on Si (100), followed by thermal annealing at 1100 °C for 10 min. The nanocrystals show a broad photoluminescence spectrum, peaking at 880 nm, attributed to the recombination of quantum confined excitons. Rutherford backscattering spectrometry and transmission electron microscopy show that annealing these samples in flowing O2 at 1000 °C for times up to 30 min results in oxidation of the Si nanocrystals, first close to the SiO2 film surface and later at greater depths. Upon oxidation for 30 min the photoluminescence peak wavelength blueshifts by more than 200 nm. This blueshift is attributed to a quantum size effect in which a reduction of the average nanocrystal size leads to emission at shorter wavelengths. The room temperature luminescence lifetime measured at 700 nm increases from 12 µs for the unoxidized film to 43 µs for the film that was oxidized for 29 min

Loss mechanisms of surface plasmon polaritons on gold probed by cathodoluminescence imaging spectroscopy

We use cathodoluminescence imaging spectroscopy to excite surface plasmon polaritons and measure their decay length on single crystal and polycrystalline gold surfaces. The surface plasmon polaritons are excited on the gold surface by a nanoscale focused electron beam and are coupled into free space radiation by gratings fabricated into the surface. By scanning the electron beam on a line perpendicular to the gratings, the propagation length is determined. Data for single-crystal gold are in agreement with calculations based on dielectric constants. For polycrystalline films, grain boundary scattering is identified as additional loss mechanism, with a scattering coefficient SG=0.2%

Charging of single Si nanocrystals by atomic force microscopy

Conducting-tip atomic force microscopy (AFM) has been used to electronically probe silicon nanocrystals on an insulating substrate. The nanocrystal samples were produced by aerosol techniques and size classified; nanocrystal size can be controlled in the size range of 2-50 nm with a size variation of less than 10%. Using a conducting tip, the charge was injected directly into the nanocrystals, and the subsequent dissipation of the charge was monitored. Estimates of the injected charge can be made by comparison of the data with an intermittent contact mode model of the AFM response to the electrostatic force produced by the stored charge