410 research outputs found
Intrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared
Generation of single photons has been demonstrated in several systems.
However, none of them satisfies all the conditions, e.g. room temperature
functionality, telecom wavelength operation, high efficiency, as required for
practical applications. Here, we report the fabrication of light emitting
diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate
our devices we used a standard semiconductor manufacturing technology in
combination with high-energy electron irradiation. The room temperature
electroluminescence (EL) of our LEDs reveals two strong emission bands in
visible and near infrared (NIR), associated with two different intrinsic
defects. As these defects can potentially be generated at a low or even single
defect level, our approach can be used to realize electrically driven single
photon source for quantum telecommunication and information processing
Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
Quantum systems can provide outstanding performance in various sensing
applications, ranging from bioscience to nanotechnology. Atomic-scale defects
in silicon carbide are very attractive in this respect because of the
technological advantages of this material and favorable optical and radio
frequency spectral ranges to control these defects. We identified several,
separately addressable spin-3/2 centers in the same silicon carbide crystal,
which are immune to nonaxial strain fluctuations. Some of them are
characterized by nearly temperature independent axial crystal fields, making
these centers very attractive for vector magnetometry. Contrarily, the
zero-field splitting of another center exhibits a giant thermal shift of -1.1
MHz/K at room temperature, which can be used for thermometry applications. We
also discuss a synchronized composite clock exploiting spin centers with
different thermal response.Comment: 8 pages, 7 figure
Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects
Bulk silicon carbide (SiC) is a very promising material system for
bio-applications and quantum sensing. However, its optical activity lies beyond
the near infrared spectral window for in-vivo imaging and fiber communications
due to a large forbidden energy gap. Here, we report the fabrication of SiC
nanocrystals and isolation of different nanocrystal fractions ranged from 600
nm down to 60 nm in size. The structural analysis reveals further fragmentation
of the smallest nanocrystals into ca. 10-nm-size clusters of high crystalline
quality, separated by amorphization areas. We use neutron irradiation to create
silicon vacancies, demonstrating near infrared photoluminescence. Finally, we
detect, for the first time, room-temperature spin resonances of these silicon
vacancies hosted in SiC nanocrystals. This opens intriguing perspectives to use
them not only as in-vivo luminescent markers, but also as magnetic field and
temperature sensors, allowing for monitoring various physical, chemical and
biological processes.Comment: 5 pages, 4 figure
International Scientific Conference «From Ancient Russia to the Russian Federation: History of the Russian Statehood»
- …