Electrical properties of ZnO–BaTiO3–ZnO heterostructures with asymmetric interface charge distribution

We report on capacitance-voltage, current-voltage, Sawyer–Tower, and transient current switching measurements for a ZnO–BaTiO3–ZnO heterostructure deposited on (001) silicon by using pulsed laser deposition. The triple-layer structure reveals asymmetric capacitance- and current-voltage hysteresis and cycling-voltage dependent Sawyer–Tower polarization drift. We explain our findings by coupling of the ferroelectric (BaTiO3) and piezoelectric (ZnO) interface charges and parallel polarization orientation of the ZnO layers causing asymmetric space charge region formation under positive and negative bias. The transient current characteristics suggest use of this structure as nonvolatile memory device

Mid-infrared frequency comb spanning an octave based on an Er fiber laser and difference-frequency generation

We describe a coherent mid-infrared continuum source with 700 cm-1 usable bandwidth, readily tuned within 600 - 2500 cm-1 (4 - 17 \mum) and thus covering much of the infrared "fingerprint" molecular vibration region. It is based on nonlinear frequency conversion in GaSe using a compact commercial 100-fs-pulsed Er fiber laser system providing two amplified near-infrared beams, one of them broadened by a nonlinear optical fiber. The resulting collimated mid-infrared continuum beam of 1 mW quasi-cw power represents a coherent infrared frequency comb with zero carrier-envelope phase, containing about 500,000 modes that are exact multiples of the pulse repetition rate of 40 MHz. The beam's diffraction-limited performance enables long-distance spectroscopic probing as well as maximal focusability for classical and ultraresolving near-field microscopies. Applications are foreseen also in studies of transient chemical phenomena even at ultrafast pump-probe scale, and in high-resolution gas spectroscopy for e.g. breath analysis.Comment: 8 pages, 2 figures revised version, added reference

Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

The effect of high-temperature high-pressure annealing on the residual strain, bending, and point defect redistribution of freestanding hydride vapor phase epitaxial GaN films was studied. The bending was found to be determined by the difference in the in-plane lattice parameters in the two faces of the films. The results showed a tendency of equalizing the lattice parameters in the two faces with increasing annealing temperature, leading to uniform strain distribution across the film thickness. A nonmonotonic behavior of structural parameters with increasing annealing temperature was revealed and related to the change in the point defect content under the high-temperature treatment.Peer reviewe

Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures

We report on temperature, time, and voltage dependent resistive hysteresis measurements of BaTiO3-ZnO heterostructures grown on (001) Si substrates by pulsed laser deposition. We observe a diodelike behavior and cycling-voltage dependent hysteresis formation under forward bias. We explain these effects with depletion layer formation between the ZnO and BaTiO3 layers, an additional barrier due to the spontaneous polarization of ZnO and the ferroelectric nature of BaTiO3. The disappearance of the resistive hysteresis above the ferroelectric-paraelectric phase transition temperature of BaTiO3 conformed that the hysteresis is related to the ferroelectricity of BaTiO3. Time dependent resistance measurements reveal memory effects

Interface polarization coupling in piezoelectric-semiconductor ferroelectric heterostructures

We present a dielectric continuum model approach for studying the electrical polarization properties of interface polarization coupled BaTiO3, BaTiO3-ZnO, and ZnO-BaTiO3-ZnO thin-film structures consisting of several hundred nanometer thick layers. Our model augments the effects of electric field driven switchable polarization and depletion layer formation with spontaneous interface polarization coupling. Wurtzite-structure (piezoelectric) n-type ZnO and perovskite-structure (ferroelectric) highly insulating BaTiO3 layers were prepared and investigated. The coupling between the nonswitchable spontaneous polarization of ZnO and the electrically switchable spontaneous polarization of BaTiO3 causes strong asymmetric polarization hysteresis behavior. The n-type ZnO reveals hysteresis-dependent capacitance variations upon formation of depletion layers at the ZnO/BTO interfaces. We obtain a very good agreement between our model generated data and our experiment. Our model approach allows for derivation of the amount and orientation of the spontaneous polarization of the piezoelectric constituents and can be generalized toward multiple-layer piezoelectric-semiconductor ferroelectric heterostructures. We identify interface polarization coupled triple-layer ZnO-BTOZnO heterostructures as two-terminal unipolar ferroelectric Bi-junction transistor for use in memory storage