4 research outputs found
Electrochemical Stability of Metastable Materials
We
present a first-principles-based formalism to provide a quantitative
measure of the thermodynamic instability and propensity for electrochemical
stabilization, passivation, or corrosion of metastable materials in
aqueous media. We demonstrate that this formalism can assess the relative
Gibbs free energy of candidate materials in aqueous media as well
as their decomposition products, combining solid and aqueous phases,
as a function of pH and potential. On the basis of benchmarking against
20 stable as well as metastable materials reported in the literature
and also our experimental characterization of metastable triclinic-FeVO<sub>4</sub>, we present quantitative estimates for the relative Gibbs
free energy and corresponding aqueous regimes where these materials
are most likely to be stable, form inert passivating films, or steadily
corrode to aqueous species. Furthermore, we show that the structure
and composition of the passivating films formed on triclinic-FeVO<sub>4</sub> are also in excellent agreement with the Point Defect Model,
as proposed by the corrosion community. An open-source web application
based on the formalism is made available at https://materialsproject.org
Atom Probe Tomography Analysis of Ag Doping in 2D Layered Material (PbSe)<sub>5</sub>(Bi<sub>2</sub>Se<sub>3</sub>)<sub>3</sub>
Impurity doping in
two-dimensional (2D) materials can provide a route to tuning electronic
properties, so it is important to be able to determine the distribution
of dopant atoms within and between layers. Here we report the tomographic
mapping of dopants in layered 2D materials with atomic sensitivity
and subnanometer spatial resolution using atom probe tomography (APT).
APT analysis shows that Ag dopes both Bi<sub>2</sub>Se<sub>3</sub> and PbSe layers in (PbSe)<sub>5</sub>(Bi<sub>2</sub>Se<sub>3</sub>)<sub>3</sub>, and correlations in the position of Ag atoms suggest
a pairing across neighboring Bi<sub>2</sub>Se<sub>3</sub> and PbSe
layers. Density functional theory (DFT) calculations confirm the favorability
of substitutional doping for both Pb and Bi and provide insights into
the observed spatial correlations in dopant locations
Discovery of Manganese-Based Solar Fuel Photoanodes via Integration of Electronic Structure Calculations, Pourbaix Stability Modeling, and High-Throughput Experiments
The solar photoelectrochemical
generation of hydrogen and carbon-containing
fuels comprises a critical energy technology for establishing sustainable
energy resources. The photoanode, which is responsible for solar-driven
oxygen evolution, has persistently limited technology advancement
due to the lack of materials that exhibit both the requisite electronic
properties and operational stability. Efforts to extend the lifetime
of solar fuel devices increasingly focus on mitigating corrosion in
the highly oxidizing oxygen evolution environment, motivating our
development of a photoanode discovery pipeline that combines electronic
structure calculations, Pourbaix stability screening, and high-throughput
experiments. By applying the pipeline to ternary metal oxides containing
manganese, we identify a promising class of corrosion-resistant materials
and discover five oxygen evolution photoanodes, including the first
demonstration of photoelectrocatalysis with Mn-based ternary oxides
and the introduction of alkaline earth manganates as promising photoanodes
for establishing a durable solar fuels technology
van der Waals Epitaxial Growth of Graphene on Sapphire by Chemical Vapor Deposition without a Metal Catalyst
van der Waals epitaxial growth of graphene on <i>c</i>-plane (0001) sapphire by CVD without a metal catalyst is presented. The effects of CH<sub>4</sub> partial pressure, growth temperature, and H<sub>2</sub>/CH<sub>4</sub> ratio were investigated and growth conditions optimized. The formation of monolayer graphene was shown by Raman spectroscopy, optical transmission, grazing incidence X-ray diffraction (GIXRD), and low voltage transmission electron microscopy (LVTEM). Electrical analysis revealed that a room temperature Hall mobility above 2000 cm<sup>2</sup>/V·s was achieved, and the mobility and carrier type were correlated to growth conditions. Both GIXRD and LVTEM studies confirm a dominant crystal orientation (principally graphene [10–10] || sapphire [11–20]) for about 80–90% of the material concomitant with epitaxial growth. The initial phase of the nucleation and the lateral growth from the nucleation seeds were observed using atomic force microscopy. The initial nuclei density was ∼24 μm<sup>–2</sup>, and a lateral growth rate of ∼82 nm/min was determined. Density functional theory calculations reveal that the binding between graphene and sapphire is dominated by weak dispersion interactions and indicate that the epitaxial relation as observed by GIXRD is due to preferential binding of small molecules on sapphire during early stages of graphene formation