Memory maps : Reading RRAM devices without power consumption

Producción CientíficaA comparative study of MIM-RRAM structures with different insulator materials is presented. Admittance memory mapping was carried out at 0 V dc bias, revealing two clearly separated states, both in terms of conductance and susceptance. The memory in the ON state can be modeled by means of a two parameter (resistance and inductance) equivalent circuit. The parameter extraction provides memory maps for the resistance and the inductance as well. The transition shapes between the ON and OFF state are different for each structure due to specific physical mechanisms.Ministerio de Economía, Industria y Competitividad - Fondo Europeo de Desarrollo Regional (grant TEC2014-52152-C3-3-R)Fondo Europeo de Desarrollo Regional (project TK134)Estonian Research Agency (grants IUT2-24 and PRG4

Memory maps : Reading RRAM devices without power consumption

´A comparative study of MIM-RRAM structures with different insulator materials is presented. Admittance memory mapping was carried out at 0 V dc bias, revealing two clearly separated states, both in terms of conductance and susceptance. The memory in the ON state can be modeled by means of a two parameter (resistance and inductance) equivalent circuit. The parameter extraction provides memory maps for the resistance and the inductance as well. The transition shapes between the ON an OFF state are different for each structure due to specific physical mechanisms. © The Electrochemical Society.Peer reviewe

TiO2-based metal-insulator-metal structures for future DRAM storage capacitors

Capacitors with TiO2 and Al-doped TiO2 dielectric films grown by atomic layer deposition exhibit promising properties for application in DRAM technology for 20 nm node and beyond. For stabilization of the high dielectric constant rutile TiO2 phase RuO2 thin films were employed as a bottom electrode. The capacitors with the equivalent oxide thickness below 0.5 nm show leakage current below 10-7 A/cm2 at voltage 0.8 and 0.6 V, respectively. Current distribution study using Conductive AFM studies revealed preferential leakage current flow through grains. Low equivalent oxide thickness and low leakage currents of TiO2-based capacitors confirm that they can be considered as an alternative to the SrTiO3 DRAM capacitors