33 research outputs found

    A clustering engine for data rate reduction in the Belle II pixel detector

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    The DEPFET technology has been chosen as the baseline for the vertex pixel detector of the Belle II experiment at KEK\Japan. This detector consist of 22 modules, each proposed to be equipped with 2 × 250 × 512 pixel. With the proposed average readout frequency of 10kHz and 30kHz peak rate a huge data stream of approx. 100Gbit/s will be generated. To reduce this data stream to a more feasible value, we have to take advantage of the low occupancy of approx. 1−2% and the the hit distribution within the pixel array. For this purpose a pipelined clustering algorithm was developed, which can handle cluster sizes of 3 × 3 or 5 × 5 at full readout speed. These algorithm can handle data from non bricked sensors and also from bricked designs. It is able to reduce the data rate by up to 50%. The collection of the clustered data packages from the row wise parallel pipeline are controlled by a specially developed output scheduler, which assures together with the corresponding FIFO structures the data-handling capability. In this paper we will present the overall structure of such a DCE (Data Clustering Engine) and also the details of the implemented clustering and output scheduling algorithms. Furthermore the impacts of the constraints on speed, power and area on the developed circuit and the chosen realization given by the experiment environment will be discussed in detail

    Radiation studies of silicon-microstrip detectors for use in ATLAS and SCT

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    Silicon detectors from both standard-silicon and oxygenated-silicon material, which were radiation hard to the dose level expected after ten years of operation in ATLAS, was developed. After irradiation, the detector current decreases throughout the entire annealing period. Results showed that oxygenated detectors were of higher leakage current than standard silicon detectors after irradiation, while the current annealing was similar for two types. (Edited abstract) 6 Refs

    A fast readout using switched current techniques for a DEPFET-pixel vertex detector at TESLA

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    A fully depleted silicon detector with a first amplifying transistor integrated in every pixel (DEPFET) is a promising proposal for the pixel-based vertex detector at TESLA. The DEPFET offers good spatial resolution, an excellent signalto- noise ratio and low power consumption in a row-wise operation mode. A readout concept for a DEPFET pixel array matching the requirements at TESLA is described. In order to meet the operation specifications at TESLA (50 MHz row rate), a readout architecture based on current mode techniques (Switched Current) is presented. It contains stand alone zero suppression offering a triggerless operation. The core of the readout chip, a fast operating current memory cell, is discussed in detail. The results of a first prototype chip, CURO I (CUrrent ReadOut), show that the requirements for TESLA are achievable

    Effects of gamma irradiation on DEPFET pixel sensors for the Belle II experiment

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    For the Belle II experiment at KEK (Tsukuba, Japan) the KEKB accelerator was upgraded to deliver a 40 times larger instantaneous luminosity than before, which requires an increased radiation hardness of the detector components. As the innermost part of the Belle II detector, the pixel detector (PXD), based on DEPFET (DEpleted P-channel Field Effect Transistor) technology, is most exposed to radiation from the accelerator. An irradiation campaign was performed to verify that the PXD can cope with the expected amount of radiation. We present the results of this measurement campaign in which an X-ray machine was used to irradiate a single PXD half-ladder to a total dose of 266 kGy. The half-ladder is from the same batch as the half-ladders used for Belle II. According to simulations, the total accumulated dose corresponds to 7–10 years of Belle II operation. While individual components have been irradiated before, this campaign is the first full system irradiation. We discuss the effects on the DEPFET sensors, as well as the performance of the front-end electronics. In addition, we present efficiency studies of the half-ladder from beam tests performed before and after the irradiation
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