836 research outputs found

    The evolution of clearing and central counterparty services for exchange-traded derivatives in the United States and Europe - a comparison

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    This paper is organised as follows. Section 1 explains why issues concerning central counterparty clearing houses are of direct concern to central banks and why a comparison of the European and the US situation is of interest. Section 2 provides a comparative overview of the organisation of derivatives exchanges in the United States and in Europe. Section 3 focuses on the organisation of clearing, covering a broad range of aspects. Section 4 analyses operational developments in international risk management practices and arrangements. Section 5 discusses various forms of structural consolidation in the clearing and settlement infrastructure by highlighting the different approaches taken in the United States and in Europe. Section 6 is devoted to the roles of central banks and financial market regulators regarding clearing and to the challenges they face as a result of current innovations in clearing arrangements. Finally, Section 7 summarises some of the main findings.

    gg-factor anisotropy in nanowire-based InAs quantum dots

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    The determination and control of the electron gg-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the gg-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the gg-factor from the splitting of Kondo resonances and find that it varies continuously in the range between ∣g∗∣=5|g^*| = 5 and 15.Comment: 2 pages, 2 figure

    Non-local spectroscopy of Andreev bound states

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    We experimentally investigate Andreev bound states (ABSs) in a carbon nanotube quantum dot (QD) connected to a superconducting Nb lead (S). A weakly coupled normal metal contact acts as a tunnel probe that measures the energy dispersion of the ABSs. Moreover we study the response of the ABS to non-local transport processes, namely Cooper pair splitting and elastic co-tunnelling, that are enabled by a second QD fabricated on the same nanotube on the opposite side of S. We find an appreciable non-local conductance with a rich structure, including a sign reversal at the ground state transition from the ABS singlet to a degenerate magnetic doublet. We describe our device by a simple rate equation model that captures the key features of our observations and demonstrates that the sign of the non-local conductance is a measure for the charge distribution of the ABS, given by the respective Bogoliubov-de Gennes amplitudes uu and vv

    Entanglement witnessing and quantum cryptography with non-ideal ferromagnetic detectors

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    We investigate theoretically the use of non-ideal ferromagnetic contacts as a mean to detect quantum entanglement of electron spins in transport experiments. We use a designated entanglement witness and find a minimal spin polarization of η>1/3≈58\eta > 1/\sqrt{3} \approx 58 % required to demonstrate spin entanglement. This is significantly less stringent than the ubiquitous tests of Bell's inequality with η>1/24≈84\eta > 1/\sqrt[4]{2}\approx 84%. In addition, we discuss the impact of decoherence and noise on entanglement detection and apply the presented framework to a simple quantum cryptography protocol. Our results are directly applicable to a large variety of experiments.Comment: 10 pages, 4 figure

    In-situ strain tuning in hBN-encapsulated graphene electronic devices

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    Using a simple setup to bend a flexible substrate, we demonstrate deterministic and reproducible in-situ strain tuning of graphene electronic devices. Central to this method is the full hBN encapsulation of graphene, which preserves the exceptional quality of pristine graphene for transport experiments. In addition, the on-substrate approach allows one to exploit strain effects in the full range of possible sample geometries and at the same time guarantees that changes in the gate capacitance remain negligible during the deformation process. We use Raman spectroscopy to spatially map the strain magnitude in devices with two different geometries and demonstrate the possibility to engineer a strain gradient, which is relevant for accessing the valley degree of freedom with pseudo-magnetic fields. Comparing the transport characteristics of a suspended device with those of an on-substrate device, we demonstrate that our new approach does not suffer from the ambiguities encountered in suspended devices

    A Double Quantum Dot Spin Valve

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    A most fundamental and longstanding goal in spintronics is to electrically tune highly efficient spin injectors and detectors, preferably compatible with nanoscale electronics. Here, we demonstrate all these points using semiconductor quantum dots (QDs), individually spin-polarized by ferromagnetic split-gates (FSGs). As a proof of principle, we fabricated a double QD spin valve consisting of two weakly coupled semiconducting QDs in an InAs nanowire (NW), each with independent FSGs that can be magnetized in parallel or anti-parallel. In tunneling magnetoresistance (TMR) experiments at zero external magnetic field, we find a strongly reduced spin valve conductance for the two anti-parallel configurations, with a single QD polarization of ∌27%\sim 27\%. The TMR can be significantly improved by a small external field and optimized gate voltages, which results in a continuously electrically tunable TMR between +80%+80\% and −90%-90\%. A simple model quantitatively reproduces all our findings, suggesting a gate tunable QD polarization of ±80%\pm 80\%. Such versatile spin-polarized QDs are suitable for various applications, for example in spin projection and correlation experiments in a large variety of nanoelectronics experiments

    Superconducting contacts to a monolayer semiconductor

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    We demonstrate superconducting vertical interconnect access (VIA) contacts to a mono-layer of molybdenum disulfide (MoS2), a layered semiconductor with highly relevant elec-tronic and optical properties. As a contact material we use MoRe, a superconductor with a high critical magnetic field and high critical temperature. The electron transport is mostly dominated by a single superconductor/normal conductor junction with a clear superconductor gap. In addition, we find MoS2 regions that are strongly coupled to the superconductor, resulting in resonant Andreev tunneling and junction dependent gap characteristics, suggesting a superconducting proximity effect. Magnetoresistance measurements show that the band-structure and the high intrinsic carrier mobility remain intact in the bulk of the MoS2. This type of VIA contact is applicable to a large variety of layered materials and superconductin

    Simulation and validation of residual deformations in additive manufacturing of metal parts

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    Selective laser melting (SLM) is gaining increasing relevance in industry. Residual deformations and internal stresses caused by the repeated layerwise melting of the metal powder and transient cooling of the solidified layers still presents a significant challenge to the profitability and quality of the process. Excessive distortions or cracking may lead to expensive rejects. In practice, critical additively manufactured parts are either iteratively pre-compensated or redesigned based on production experience. To satisfy the need for improved understanding of this complex manufacturing process, CAE software providers have recently developed solutions to simulate the SLM process. This study focuses on the evaluation of two solutions by ANSYS, i.e. ANSYS Additive Print and ANSYS Additive Suite. ANSYS Additive Print (AAP), a user-oriented software, and ANSYS Additive Suite (AAS), a software requiring advanced experience with Finite Element Methods (FEM), are investigated and validated with regard to residual deformations. For the evaluation of the two programs, calibration and validation geometries were printed by SLM in Ti–6Al–4V and residual deformations have been measured by 3D scanning. The results have been used for the calibration of isotropic and anisotropic strain scaling factors in AAP, and for sensitivity analyses on the effect of basic model parameters in AAS. The actual validation of the programs is performed on the basis of different sample geometries with varying wall thickness and deformation characteristic. While both simulation approaches, AAP and AAS, are capable of predicting the qualitative characteristics of the residual deformations sufficiently well, accurate quantitative results are difficult to obtain. AAP is more accessible and yields accurate results within the calibrated regime. Extrapolation to other geometries introduces uncertainties, however. AAS, on the other hand, features a sounder physical basis and therefore allows for a more robust extrapolation. Numerical efforts and modelling uncertainties as well as requirements for an extensive set of material parameters reduce its practicality, however. More appropriate calibration geometries, continuing extension of a more reliable material database, improved user guidelines and increased numerical efficiency are key in the future establishment of the process simulation approaches in the industrial practice

    Vortex Entanglement and Broken Symmetry

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    Based on the London approximation, we investigate numerically the stability of the elementary configurations of entanglement, the twisted-pair and the twisted-triplet, in the vortex-lattice and -liquid phases. We find that, except for the dilute limit, the twisted-pair is unstable and hence irrelevant in the discussion of entanglement. In the lattice phase the twisted-triplet constitutes a metastable, confined configuration of high energy. Loss of lattice symmetry upon melting leads to deconfinement and the twisted-triplet turns into a low-energy helical configuration.Comment: 4 pages, RevTex, 2 figures on reques
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