MODEL CALCULATION OF THE FEMTOSECOND CARRIER DYNAMICS IN AL0.48GA0.52AS

We present a model calculation capable of investigating the dynamics of photoexcited carriers in the Al0.48Ga0.52As indirect gap semiconductor. Nearly resonant excitation at the Gamma point produces low excess energy carriers, so that we use Boltzmann like equations and assume thermalized carrier distributions for each of the conduction valleys. Some aspects of the carrier dynamics are discussed and pump and probe measurements are compared to the calculated saturation bleaching, evidencing a very good agreement between theory and experiment. We obtain a value of 3.5 eV/Angstrom A for the D-Gamma X deformation potential.7663749375

Device Modeling of Dye-Sensitized Solar Cells

We review the concepts and methods of modeling of the dye-sensitized solar cell, starting from fundamental electron transfer theory, and using phenomenological transport-conservation equations. The models revised here are aimed at describing the components of the current–voltage curve of the solar cell, based on small perturbation experimental methods, and to such an end, a range of phenomena occurring in the nanoparticulate electron transport materials, and at interfaces, are covered. Disorder plays a major role in the definition of kinetic parameters, and we introduce single particle as well as collective function definitions of diffusion coefficient and electron lifetime. Based on these fundamental considerations, applied tools of analysis of impedance spectroscopy are described, and we outline in detail the theory of recombination via surface states that is successful to describe the measured recombination resistance and lifetime