Angular-dependent oscillations of the magnetoresistance in Bi_2Se_3 due to the three-dimensional bulk Fermi surface

We observed pronounced angular-dependent magnetoresistance (MR) oscillations in a high-quality Bi2Se3 single crystal with the carrier density of 5x10^18 cm^-3, which is a topological insulator with residual bulk carriers. We show that the observed angular-dependent oscillations can be well simulated by using the parameters obtained from the Shubnikov-de Haas oscillations, which clarifies that the oscillations are solely due to the bulk Fermi surface. By completely elucidating the bulk oscillations, this result paves the way for distinguishing the two-dimensional surface state in angular-dependent MR studies in Bi2Se3 with much lower carrier density. Besides, the present result provides a compelling demonstration of how the Landau quantization of an anisotropic three-dimensional Fermi surface can give rise to pronounced angular-dependent MR oscillations.Comment: 5 pages, 5 figure

Spin-Orbit Coupling and Anomalous Angular-Dependent Magnetoresistance in the Quantum Transport Regime of PbS

We measured magnetotransport properties of PbS single crystals which exhibit the quantum linear magnetoresistance (MR) as well as the static skin effect that creates a surface layer of additional conductivity. The Shubnikov-de Haas oscillations in the longitudinal MR signify the peculiar role of spin-orbit coupling. In the angular-dependent MR, sharp peaks are observed when the magnetic field is slightly inclined from the longitudinal configuration, which is totally unexpected for a system with nearly spherical Fermi surface and points to an intricate interplay between the spin-orbit coupling and the conducting surface layer in the quantum transport regime.Comment: 5 pages, 5 figure

Mechanisms for overcharging of carbon electrodes in lithium-ion/sodium-ion batteries analysed by operando solid-state NMR

A precise understanding of the mechanism for metal (Li and Na) plating on negative electrodes that occurs with overcharging is critical to managing the safety of lithium- and sodium-ion batteries. In this work, an in-depth investigation of the overlithiation/oversodiation and subsequent delithiation/desodiation of graphite and hard carbon electrodes in the first cycle was conducted using operando7Li/23Na solid-state NMR. In the 7Li NMR spectra of half cells of carbon electrodes and metal counter electrodes, three types of signals corresponding to Li dendrites that formed on the surface of graphite, hard carbon, and the counter electrode were distinguished from the signal of Li metal foil of the counter electrode by applying an appropriate orientation of the testing cell. For graphite overlithiation, the deposition of Li dendrites started immediately or soon after the minimum electric potential in the lithiation curve. In contrast, the deposition of Li dendrites in hard carbon started after the end of quasimetallic lithium formation for overlithiation at rates below 3.0C. Similar behaviour was also observed for the oversodiation of hard carbon. The formation of quasimetallic Li or Na in the pores of hard carbon serves as a buffer for the metal plating that occurs with overcharging of the batteries. Furthermore, some of the deposited Li/Na dendrites contribute to reversible capacities. A mechanism for the inhomogeneous disappearance of quasimetallic Li during delithiation of hard carbon is also proposed

Embedded DRAM using c-axis-aligned crystalline In-Ga-Zn oxide FET with 1.8V-power-supply voltage

An embedded memory using c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) FETs with an extremely low off-state current on the order of yoctoamperes (yA) (yocto- is a metric prefix denoting a factor of 10-24) is known as a potential next-generation memory [1][2]. A dynamic oxide semiconductor RAM (DOSRAM), where each memory cell is composed of one CAAC-IGZO FET and one capacitor, enables long data retention and long interval of refresh operations with an advantage of extremely low off-state current of the CAAC-IGZO FET. However, negative backgate voltage (Vbg) and word-line driving voltages of 0/3.3 V (VSSL/VDDH) had been required for an access transistor of the memory cell to satisfy high on-state current and low off-state current. This work shows that DOSRAM operates with 1.8 V-power supply voltage by using a novel driving method. Figure 1 shows Vg-Id performance of a CAAC-IGZO FET used as a cell transistor. The threshold voltage (Vth) of the CAAC-IGZO FET is controlled by changing a level of Vbg, whereas Vth of the Si FET is controlled by channel doping. Figure 2 shows a block diagram of a prototyped DOSRAM. The refresh rate in DOSRAM mainly depends on the leakage current of cell transistors. To reduce the refresh rate to once an hour, the off-state current of the cell transistors on a non-selected word line needs to be reduced to 200 zeptoamperes (zA) per FET (zepto- is a metric prefix denoting a factor of 10-21) or lower at 85C. The required Vbg is -7.0 V to achieve such an off-state current at Vg 0 V, for example. To obtain approx. 100 MHz-driving frequency, the required on-state current is at least several microamperes. The voltage level difference in the word line, VDDH VSSL, is a factor that determines the on-state current, and in this work is fixed to 3.3 V so that the combination of Vbg and the word line voltage is optimized. The application of negative voltage to the word line enables the leakage current of the cell transistor to be maintained low even when Vbg is increased. For example, whereas the existing driving method meets the above off-state current value with Vbg -7.0 V and the VSSL 0 V, the novel driving method meets the value with Vbg 0 V and VSSL -1.5 V. In the novel driving method, VDDH 1.8 V. There has been a report of a reduction in leakage current of a memory cell by application of negative voltage to a top gate in DRAM using Si CMOS [3]. In contrast to it, DOSRAM including CAAC-IGZO FETs with L 60 nm has a leakage current of 200 zA or lower, which is 7-digit lower than that of the DRAM using Si CMOS, and enables longer data retention. The evaluation results of the prototyped DOSRAM verify that a reduction in power-supply voltage from 3.3 V to 1.8 V is possible in terms of operation and data retention. This suggests a highly compatible and efficient configuration of an embedded DRAM and a logic circuit where signals can be transmitted with low VDD. References [1] S. H. Wu, et al., IEEE Symp. VLSI Tech., pp. 166-167, 2017. [2] T. Ishizu, et al., IEEE Symp. VLSI Cir., pp. 162-163, 2017. [3] F. Hamzaoglu et al., IEEE Journal of Solid-State Circuits, vol. 50, no. 1, pp. 150-157, Jan. 2015

Fundamental Parameters of the Milky Way Galaxy Based on VLBI astrometry

We present analyses to determine the fundamental parameters of the Galaxy based on VLBI astrometry of 52 Galactic maser sources obtained with VERA, VLBA and EVN. We model the Galaxy's structure with a set of parameters including the Galaxy center distance R_0, the angular rotation velocity at the LSR Omega_0, mean peculiar motion of the sources with respect to Galactic rotation (U_src, V_src, W_src), rotation-curve shape index, and the V component of the Solar peculiar motions V_sun. Based on a Markov chain Monte Carlo method, we find that the Galaxy center distance is constrained at a 5% level to be R_0 = 8.05 +/- 0.45 kpc, where the error bar includes both statistical and systematic errors. We also find that the two components of the source peculiar motion U_src and W_src are fairly small compared to the Galactic rotation velocity, being U_src = 1.0 +/- 1.5 km/s and W_src = -1.4 +/- 1.2 km/s. Also, the rotation curve shape is found to be basically flat between Galacto-centric radii of 4 and 13 kpc. On the other hand, we find a linear relation between V_src and V_sun as V_src = V_sun -19 (+/- 2) km/s, suggesting that the value of V_src is fully dependent on the adopted value of V_sun. Regarding the rotation speed in the vicinity of the Sun, we also find a strong correlation between Omega_0 and V_sun. We find that the angular velocity of the Sun, Omega_sun, which is defined as Omega_sun = Omega_0 + V_sun/R_0, can be well constrained with the best estimate of Omega_sun = 31.09 +/- 0.78 km/s/kpc. This corresponds to Theta_0 = 238 +/- 14 km/s if one adopts the above value of R_0 and recent determination of V_sun ~ 12 km/s.Comment: 14 pages, 6 figures, PASJ in pres

VLBI Astrometry of AGB Variables with VERA -- A Semiregular Variable S Crateris --

We present a distance measurement for the semiregular variable S Crateris (S Crt) based on its annual parallax. With the unique dual beam system of the VLBI Exploration for Radio Astrometry (VERA) telescopes, we measured the absolute proper motion of a water maser spot associated with S Crt, referred to the quasar J1147-0724 located at an angular separation of 1.23$^{\circ}$. In observations spanning nearly two years, we have detected the maser spot at the LSR velocity of 34.7 km s$^{-1}$, for which we measured the annual parallax of 2.33$\pm$0.13 mas corresponding to a distance of 430$^{+25}_{-23}$ pc. This measurement has an accuracy one order of magnitude better than the parallax measurements of HIPPARCOS. The angular distribution and three-dimensional velocity field of maser spots indicate a bipolar outflow with the flow axis along northeast-southwest direction. Using the distance and photospheric temperature, we estimate the stellar radius of S Crt and compare it with those of Mira variables.Comment: 9 pages, 4 figures, accepted for publication in PASJ (Vol.60, No.5, October 25, VERA special issue

Astrometry of H2_{2}O Masers in Nearby Star-Forming Regions with VERA. III. IRAS 22198+6336 in L1204G

We present results of multi-epoch VLBI observations with VERA (VLBI Exploration of Radio Astrometry) of the 22 GHz H$_{2}$O masers associated with a young stellar object (YSO) IRAS 22198+6336 in a dark cloud L1204G. Based on the phase-referencing VLBI astrometry, we derive an annual parallax of IRAS 22198+6336 to be 1.309$\pm$0.047 mas, corresponding to the distance of 764$\pm$27 pc from the Sun. Although the most principal error source of our astrometry is attributed to the internal structure of the maser spots, we successfully reduce the errors in the derived annual parallax by employing the position measurements for all of the 26 detected maser spots. Based on this result, we reanalyze the spectral energy distribution (SED) of IRAS 22198+6336 and find that the bolometric luminosity and total mass of IRAS 22198+6336 are 450$L_{\odot}$ and 7$M_{\odot}$, respectively. These values are consistent with an intermediate-mass YSO deeply embedded in the dense dust core, which has been proposed to be an intermediate-mass counterpart of a low-mass Class 0 source. In addition, we obtain absolute proper motions of the H$_{2}$O masers for the most blue-shifted components. We propose that the collimated jets aligned along the east-west direction are the most plausible explanation for the origin of the detected maser features.Comment: 15 pages, 7 figures, accepted for publication in PASJ (Vol.60, No.5, October 25, VERA special issue

Recent Progress of Flower Colour Modification by Biotechnology

Genetically-modified, colour-altered varieties of the important cut-flower crop carnation have now been commercially available for nearly ten years. In this review we describe the manipulation of the anthocyanin biosynthesis pathway that has lead to the development of these varieties and how similar manipulations have been successfully applied to both pot plants and another cut-flower species, the rose. From this experience it is clear that down- and up-regulation of the flavonoid and anthocyanin pathway is both possible and predictable. The major commercial benefit of the application of this technology has so far been the development of novel flower colours through the development of transgenic varieties that produce, uniquely for the target species, anthocyanins derived from delphinidin. These anthocyanins are ubiquitous in nature, and occur in both ornamental plants and common food plants. Through the extensive regulatory approval processes that must occur for the commercialization of genetically modified organisms, we have accumulated considerable experimental and trial data to show the accumulation of delphinidin based anthocyanins in the transgenic plants poses no environmental or health risk