Effect of 1.0 MeV electron irradiation on shunt resistance in Si-MINP solar cells

Shunt resistance from 100 K to 400 K is compared for diffused and ion implanted cells before and after irradiation. R sub sh decreases from greater than 10 to the 7th power omega-square cm for T less than 250 K to 10 to the 4th power omega-square cm at 400 K for non-irradiated diffused cells. Electron irradiation causes a more rapid decrease in R sub sh for T greater than 250 K. Ion implanted cells exhibit a similar trend except that R sub sh is significantly less for T less than 250 K and is more sensitive to irradiation at these low temperatures. The mechanism of R sub sh appears to be a combination of multistep tunneling and trapping - detrapping in the defect states of the semiconductor. Radiation serves to increase the density of these states to decrease R sub sh

Characterization of Poly-Si Thin Films Deposited by Magnetron Sputtering onto Ni Prelayers

A method of producing a polycrystalline silicon thin film on a foreign substrate without subsequent annealing has been developed. Thermally evaporated 5–100 nm thick Nifilms served as prelayers for magnetron sputtered Si thin films. A continuous film was obtained as a result of metal induced growth of polysilicon during low temperature (below 600 °C) deposition. The film uniformity is promising for large area device applications. The influence of the Ni prelayer thickness on the grain size of thus obtained films was investigated. Atomic force microscopy and cross-sectional scanning electron microscopy studies revealed features in the 150–600 nm size range while x-ray diffraction and Raman spectra analysis predicted 50–100 nm diam randomly oriented grains and a complete absence of an amorphous phase. The carrier lifetime was evaluated to be 11 μs

Study of Dynamics and Mechanism of Metal-Induced Silicon Growth

The present study addresses the mechanism of metal-induced growth of device-quality silicon thin films. Si deposition was performed by magnetron sputtering on a 25-nm-thick Ni prelayer at 525–625 °C and yielded a continuous, highly crystalline film with a columnar structure. A Ni disilicide intermediate layer formed as a result of the Ni reaction with Si deposit provides a sufficient site for the Si epitaxial growth because lattice mismatch is small between the two materials. The reaction between Ni and Si was observed to progress in several stages. The NixSiy phase evolution in a Ni:Si layer was studied by x-ray photoelectron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectrometry, transmission electron microscopy, and x-ray diffraction and found to be controlled by the Ni-to-Si concentration ratio at the growing front. After Ni is completely consumed in the silicide, continued Si deposition leads to the nucleation and growth of Si crystals on the surface of the NiSi2 grains. The issues related to the nature of NixSiy phase transformations and Si heteroepitaxy are discusse

Self-Assembly of Spatially Separated Silicon Structures by Si Heteroepitaxy on Ni Disilicide

A nonlithographic approach to produce self-assembled spatially separated Si structures for nanoelectronic applications was developed, employing the metal-induced silicon growth. Densely packed Si whiskers, 500–800 nm thick and up to 2500 nm long, were obtained by magnetron sputtering of Si on a 25 nm thick Ni prelayer at 575 °C. The nucleation of the NiSi2 compound at the Ni–Si interface followed by the Si heteroepitaxy on the lattice-matched NiSi2 is suggested to be the driving force for the whisker formation

Data compression for the microgravity experiments

Researchers present the environment and conditions under which data compression is to be performed for the microgravity experiment. Also presented are some coding techniques that would be useful for coding in this environment. It should be emphasized that researchers are currently at the beginning of this program and the toolkit mentioned is far from complete

An Overview and Status of NASA's Radioisotope Power Conversion Technology NRA

NASA's Advanced Radioisotope Power Systems (RPS) development program is developing next generation radioisotope power conversion technologies that will enable future missions that have requirements that can not be met by either photovoltaic systems or by current Radioisotope Power System (RPS) technology. The Advanced Power Conversion Research and Technology project of the Advanced RPS development program is funding research and technology activities through the NASA Research Announcement (NRA) 02-OSS-01, "Research Opportunities in Space Science 2002" entitled "Radioisotope Power Conversion Technology" (RPCT), August 13, 2002. The objective of the RPCT NRA is to advance the development of radioisotope power conversion technologies to provide significant improvements over the state-of-practice General Purpose Heat Source/Radioisotope Thermoelectric Generator by providing significantly higher efficiency to reduce the number of radioisotope fuel modules, and increase specific power (watts/kilogram). Other Advanced RPS goals include safety, long-life, reliability, scalability, multi-mission capability, resistance to radiation, and minimal interference with the scientific payload. Ten RPCT NRA contracts were awarded in 2003 in the areas of Brayton, Stirling, thermoelectric (TE), and thermophotovoltaic (TPV) power conversion technologies. This paper will provide an overview of the RPCT NRA, and a brief summary of accomplishments over the first 18 months but focusing on advancements made over the last 6 months

A 0.5 μm Thick Polysilicon Schottky Diode with Rectification Ratio of 10^6

Polycrystalline Si films, 0.5-mm thick, were obtained as a result of metal-induced growth by sputtering from a Si target on 25 nm thick Ni prelayers at 525 °C. Silicon grew heteroepitaxially on the NiSi2 layer formed due to the reaction between the sputtered Si atoms and Ni. Schottky diodes were fabricated on the Si films by deposition of a Schottky metal on the front surface of the film while Ni disilicide provided an intimate ohmic contact at the back. A Pd/n-Si diode using an n-Si film annealed for 2 h at 700 °C in forming gas demonstrated a rectification ratio of 106, while an as-deposited p-Si film provided an Al/p-Si diode with rectification of five orders of magnitude. Schottky barrier properties are briefly discussed