Optimal Control of Locusts in Subsistence Farming Areas

Locust swarms hit subsistence-staple-crop-growing households at random and are not privately controllable. An aerial-spraying optimal control model that supports the said households’ liveli-hood at least expected cost is therefore developed. The qualitative properties of the model are analysed under economically plausible but mild assumptions. The steady state comparative stat-ics reveal that the locust swarm size and the probability of a household’s crop being destroyed by a swarm decrease with the number of households, yield per household, and the staple crop’s replacement price, and increase with the marginal cost of spraying and the planner’s discount rate. A local comparative dynamics analysis is also conducted, as it provides the necessary eco-nomic intuition behind other ostensibly anomalous steady state comparative statics results.Optimal control, local stability, steady state comparative statics, local comparative dynamics

Tunable active chirped-corrugation waveguide filters

A novel tunable semiconductor waveguide reflection filter is proposed and analyzed. The filter is based on spatially selective gain pumping of a chirped-corrugation waveguide. This active chirped-corrugation waveguide filter (ACF) is considered for monolithic broadband tuning of semiconductor lasers

Saturable nonlinear dielectric waveguide with applications to broad-area semiconductor lasers

Self-focusing in a passive dielectric waveguide with a saturable nonlinearity is studied. The eigensolutions constitute a good approximation to the lateral modes of broad-area semiconductor lasers under low-duty-cycle pulsed conditions. The laser modes are predicted to consist of adjacent filaments coupled in phase, leading to a single-lobed far field, and to be stable with increased current injection above saturation intensity. The ultimate filament spacing is inversely proportional to the threshold gain, and thus wider filaments are expected in low-threshold broad-area lasers

Self-stabilized Nonlinear Lateral Modes of Broad Area Lasers

The lateral modes of broad area lasers are investigated theoretically. The nonlinear interaction between optical field and effective refractive index leads to a saturable nonlinearity in the governing field equation, so that self-modulated solutions are found to be stable with increased current injection above saturation intensity. We derive approximate analytical solutions for traveling wave fields within the broad area laser. The field amplitude consists of a small ripple superimposed on a large dc value. Matching fields at the boundary determines the modulation depth and imparts an overall phase curvature to the traveling wave mode. There are multiple lateral modes for a given set of operating conditions, and modes with successively more lobes in the ripple have greater overall phase curvature. In contrast to the linear problem, several lateral modes can achieve the same modal gain, for a given injected current density, by saturating the gain to different extent. Thus, these modes would exhibit slightly different optical powers

Broadband tunability of gain-flattened quantum well semiconductor lasers with an external grating

Quantum well lasers are shown to exhibit flattened broadband gain spectra at a particular pumping condition. The gain requirement for a grating-tuned external cavity configuration is examined and applied to a semiconductor quantum well laser with an optimized length of gain region. The predicted very broadband tunability of quantum well lasers is confirmed experimentally by grating-tuning of uncoated lasers over 85 nm, with single longitudinal mode output power exceeding 200 mW

Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1−xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate

Cathodoluminescence scanning electron microscopy is used to study AlxGa1−x As epilayers grown on a nonplanar substrate by molecular beam epitaxy. Grooves parallel to the [011-bar] direction were etched in an undoped GaAs substrate. Growth on such grooves proceeds on particular facet planes. We find that the aluminum concentration in the epilayers is dependent on the facet orientation, changing by as much as 35% from the value in the unpatterned areas. The transition in the aluminum concentration at a boundary between two facets is observed to be very abrupt

Ultralow Threshold Quantum Well Lasers For Computer Interconnects

Optical computer interconnects appear very attractive when integration of state of the art technology of quantum well GaAs/GaA1As lasers is considered. These ultralow threshold lasers provide the very high transmission rates and the inherent simplicity required for such systems. A detailed design is presented for a 5 Gbit s-1 transmission rate, suppression of pattern effects, and a system power supply of approximately 25 mW per laser. Existing experimental data show that little extrapolation is required to reach that kind of performance from state of the art technology

Fundamental limits to performance of quantum well infrared detectors

Radiometric, density of states (material), and thermal considerations are used to obtain the figure of merit of the quantum-well GaAs/GaAlAs infrared detectors described by Smith et. al. The results are compared with HgCdTe, the present industry standard, as well as with recent experiments at other laboratories

Evidence for Two Exponent Scaling in the Random Field Ising Model

Novel methods were used to generate and analyze new 15 term high temperature series for both the (connected) susceptibility χ and the structure factor (disconnected susceptibility) χd for the random field Ising model with dimensionless coupling K=J/kT, in general dimension d. For both the bimodal and the Gaussian field distributions, with mean square field J2g, we find that (χd-χ)/K2gχ2=1 as T→Tc(g), for a range of [h2]=J2g and d=3,4,5. This confirms the exponent relation γ¯=2γ (where χd~t−γ¯, χ~t−γ, t=T-Tc) providing that random field exponents are determined by two (and not three) independent exponents. We also present new accurate values for γ