MMI reflectors with free selection of reflection to transmission ratio

We investigate a new class of integrated mirrors, so called MMI reflectors. In addition to one-port full reflectors, we introduce two-port MMI reflectors, capable of both reflection and transmission. The reflection to transmission ratio in these devices can be set freely by changing their geometry. This is deinonstrated through numerical simulations as well as through a set ofworking devices realized on an indium phosphide layer stack

Submicron active-passive integration for InP-based membranes on silicon

The high vertical index contrast and the small thickness of thin InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. To make photonic integrated circuits with both passive and active components in these membranes, active-passive integration on a small scale is essential. In this paper we will present our results on sub-micrometer active areas for membrane applications

Uniform planarization technique for the realization of a twin-guide membrane laser

The InP Membrane on Silicon (IMOS) generic technology promises high index contrast photonic integrated circuits. To make this a reality fabrication of an electrically pumped twin-guide laser is pursued. In this paper, one of the bottle-necks for the processing is discussed, the planarization step and subsequent etch-back. Benzocyclobutene (BCB) is used to planarize SOA structures before contacting. Complete curing of BCB at 280oC creates uniformity issues during etch-back. To mitigate this, a partial cure at 180oC before the etch-back and a complete cure afterwards is performed. Experiments show repeatability and reproducibility. Good uniformity after etch-back is found

A monolithic 20GHz integrated extended cavity mode-locked quantum well ring laser at 1.58µm fabricated in the JEPPIX platform

We report on a passively modelocked InP/InGaAsP quantum well semiconductor ring laser which operates at 20GHz repetition rate and at 1.58µm output wavelength. A number of devices with varying relative positions of the absorbers and amplifiers have been realized using active-passive integration technology in the JEPPIX fabrication platform. The 4mm-long laser ring cavity incorporates a 750µm-long optical amplifier section, a separate 40µm-long saturable absorber section, passive waveguide sections and a passive MMI-type 50% output coupler. We investigate operation regimes of the laser and explore conditions for single mode lasing and mode-locked operation

Sub-micrometer active-passive integration for InP-based membranes on silicon

The high vertical index contrast and the small thickness of InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. Since photonic integrated circuits consist of both passive and active components, a successful active-passive integration with sub-micrometer active regions is an essential step. In this paper we will present our results on active-passive integration with sub-micrometer active areas. The interference of active and passive area shows a good quality in terms of morphology. Moreover we find that in the sub-micrometer size active area, the degradation of the material(InGaAsP QWs) due to clean room processing is limited

Widely tunable laser source operating at 2μm realized as monolithic InP photonic integrated circuit

A tunable laser operating from 2011 – 2042 nm realized as a monolithic InP photonic integrated circuit and fabricated within a multi project wafer run is presented. The laser is tuned using an intracavity filter based on nested asymmetric Mach-Zehnder interferometers with electrorefractive modulators. The device is intended for a single line gas spectroscopy and was designed and realized using a generic integration technology