Electrical characteristics of B-GaN2O3 thin films grown by PEALD

Cataloged from PDF version of article.In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (111) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O3 thin films were annealed under N-2 ambient at 600, 700, and 800 degrees C to obtain beta-phase. The structure and microstructure of the beta-Ga2O3 thin films was carried out by using grazing-incidence X-ray diffraction (GIXRD). To show effect of annealing temperature on the microstructure of beta-Ga2O3 thin films, average crystallite size was obtained from the full width at half maximum (FWHM) of Bragg lines using the Scherrer formula. It was found that crystallite size increased with increasing annealing temperature and changed from 0.8 nm to 9.1 nm with annealing. In order to perform electrical characterization on the deposited films, Al/beta-Ga2O3/p-Si metal-oxide-semiconductor (MOS) type Schottky barrier diodes (SBDs) were fabricated using the beta-Ga2O3 thin films were annealed at 800 degrees C. The main electrical parameters such as leakage current level, reverse breakdown voltage, series resistance (R-S), ideality factor (n), zero-bias barrier height (phi(Bo)), and interface states (N-SS) were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The RS values were calculated by using Cheung methods. The energy density distribution profile of the interface states as a function of (E-SS-E-V) was obtained from the forward bias I-V measurements by taking bias dependence of ideality factor, effective barrier height (phi(e)), and R-S into account. Also using the Norde function and C-V technique, phi(e) values were calculated and cross-checked. Results show that beta-Ga2O3 thin films deposited by PEALD technique at low temperatures can be used as oxide layer for MOS devices and electrical properties of these devices are influenced by some important parameters such as NSS, RS, and beta-Ga2O3 oxide layer. (C) 2014 Elsevier B.V. All rights reserved

Effect of post-deposition annealing on the electrical properties of B-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition

Cataloged from PDF version of article.Ga2O3 dielectric thin films were deposited on (111)-oriented p-type silicon wafers by plasma-enhanced atomic layer deposition using trimethylgallium and oxygen plasma. Structural analysis of the Ga 2O3 thin films was carried out using grazing-incidence x-ray diffraction. As-deposited films were amorphous. Upon postdeposition annealing at 700, 800, and 900°C for 30min under N2 ambient, films crystallized into β-form monoclinic structure. Electrical properties of the β-Ga2O3 thin films were then investigated by fabricating and characterizing Al/β-Ga2O3/p-Si metal-oxide-semiconductor capacitors. The effect of postdeposition annealing on the leakage current densities, leakage current conduction mechanisms, dielectric constants, flat-band voltages, reverse breakdown voltages, threshold voltages, and effective oxide charges of the capacitors were presented. The effective oxide charges (Qeff) were calculated from the capacitance-voltage (C-V) curves using the flat-band voltage shift and were found as 2.6×1012, 1.9×1012, and 2.5×10 12 cm-2 for samples annealed at 700, 800, and 900°C, respectively. Effective dielectric constants of the films decreased with increasing annealing temperature. This situation was attributed to the formation of an interfacial SiO2 layer during annealing process. Leakage mechanisms in the regions where current increases gradually with voltage were well fitted by the Schottky emission model for films annealed at 700 and 900°C, and by the Frenkel-Poole emission model for film annealed at 800°C. Leakage current density was found to improve with annealing temperature. β-Ga2O3 thin film annealed at 800°C exhibited the highest reverse breakdown field value. © 2014 American Vacuum Society

Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition

In this paper, AlN thin films with two different thicknesses, i.e., 7 and 47 nm, were deposited at 200 °C on p-type Si substrates by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia. To investigate the electrical characteristics of these AlN films, MIS capacitor structures were fabricated and characterized using current-voltage and high-frequency (1 MHz) capacitance-voltage measurements. The results showed that the current transport mechanism under accumulation mode is strongly dependent on the applied electric field and thickness of the AlN film. Possible conduction mechanisms were analyzed, and the basic electrical parameters were extracted and compared for AlN thin films with different thicknesses. Compared with 7-nm-thick film, a 47-nm-thick AlN film showed a lower effective charge density and threshold voltage along with a higher dielectric constant. © 2015 IEEE

Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200°C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the deposited AlN was carried out using grazing-incidence X-ray diffraction, revealing polycrystalline films with a wurtzite (hexagonal) structure. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor structures were fabricated and investigated under negative bias by performing current-voltage measurements. As a function of the applied electric field, different types of current transport mechanisms were observed; i.e., ohmic conduction (15.2-21.5 MV/m), Schottky emission (23.6-39.5 MV/m), Frenkel-Poole emission (63.8-211.8 MV/m), trap-assisted tunneling (226-280 MV/m), and Fowler-Nordheim tunneling (290-447 MV/m). Electrical properties of the insulating AlN layer and the fabricated Al/AlN/p-Si MIS capacitor structure such as dielectric constant, flat-band voltage, effective charge density, and threshold voltage were also determined from the capacitance-voltage measurements. © 2015 AIP Publishing LLC

Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

In this study, aluminum nitride (AlN) thin films were deposited at 200 �C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The structural properties of AlN were characterized by grazing incidence x-ray diffraction, by which we confirmed the hexagonal wurtzite single-phase crystalline structure. The films exhibited an optical band edge around ∼5.7 eV. The refractive index and extinction coefficient of the AlN films were measured via a spectroscopic ellipsometer. In addition, to investigate the electrical conduction mechanisms and dielectric properties, Al/AlN/p-Si metal-insulator-semiconductor capacitor structures were fabricated, and current density-voltage and frequency dependent (7 kHz-5 MHz) dielectric constant measurements (within the strong accumulation region) were performed. A peak of dielectric loss was observed at a frequency of 3 MHz and the Cole-Davidson empirical formula was used to determine the relaxation time. It was concluded that the native point defects such as nitrogen vacancies and DX centers formed with the involvement of Si atoms into the AlN layers might have influenced the electrical conduction and dielectric relaxation properties of the plasma-assisted ALD grown AlN films. � 2016 IOP Publishing Ltd

Kikuchi-Fujimoto Disease: A case report and review of the literature

Kikuchi-Fujimoto Disease is a rare benign, condition of necrotising histiocytic lymphadenitis. A case of a 55 year old gentleman is described here. He presented with fevers, weight loss and tender cervical lymph nodes. Kikuchi-Fujimoto disease was diagnosed after cervical lymph node biopsy. Symptomatic treatment was provided and an uneventful full recovery was made. Of significant note, this patient's daughter had Kikuchi-Fujimoto disease almost a decade earlier. Although Kikuchi-Fujimoto disease has been reported widely, we believe this is the first familial report in the literature of a case of Kikuchi-Fujimoto disease occurring in a parent and child

Apium plants: Beyond simple food and phytopharmacological applications

Apium plants belong to the Apiaceae family and are included among plants that have been in use in traditional medicine for thousands of years worldwide, including in the Mediterranean, as well as the tropical and subtropical regions of Asia and Africa. Some highlighted medical benefits include prevention of coronary and vascular diseases. Their phytochemical constituents consist of bergapten, flavonoids, glycosides, furanocoumarins, furocoumarin, limonene, psoralen, xanthotoxin, and selinene. Some of their pharmacological properties include anticancer, antioxidant, antimicrobial, antifungal, nematocidal, anti-rheumatism, antiasthma, anti-bronchitis, hepatoprotective, appetizer, anticonvulsant, antispasmodic, breast milk inducer, anti-jaundice, antihypertensive, anti-dysmenorrhea, prevention of cardiovascular diseases, and spermatogenesis induction. The present review summarizes data on ecology, botany, cultivation, habitat, medicinal use, phytochemical composition, preclinical and clinical pharmacological efficacy of Apium plants and provides future direction on how to take full advantage of Apium plants for the optimal benefit to mankind.N. Martins would like to thank the Portuguese Foundation for Science and Technology (FCT-Portugal) for the strategic project ref. UID/BIM/04293/2013 and “NORTE2020-Northern Regional Operational Program” (NORTE-01-0145-FEDER-000012)

Decreased glutathione levels and impaired antioxidant enzyme activities in drug-naive first-episode schizophrenic patients

<p>Abstract</p> <p>Background</p> <p>The aim of this study was to determine glutathione levels and antioxidant enzyme activities in the drug-naive first-episode patients with schizophrenia in comparison with healthy control subjects.</p> <p>Methods</p> <p>It was a case-controlled study carried on twenty-three patients (20 men and 3 women, mean age = 29.3 ± 7.5 years) recruited in their first-episode of schizophrenia and 40 healthy control subjects (36 men and 9 women, mean age = 29.6 ± 6.2 years). In patients, the blood samples were obtained prior to the initiation of neuroleptic treatments. Glutathione levels: total glutathione (GSHt), reduced glutathione (GSHr) and oxidized glutathione (GSSG) and antioxidant enzyme activities: superoxide dismutase (SOD), glutathione peroxidase (GPx), catalase (CAT) were determined by spectrophotometry.</p> <p>Results</p> <p>GSHt and reduced GSHr were significantly lower in patients than in controls, whereas GSSG was significantly higher in patients. GPx activity was significantly higher in patients compared to control subjects. CAT activity was significantly lower in patients, whereas the SOD activity was comparable to that of controls.</p> <p>Conclusion</p> <p>This is a report of decreased plasma levels of GSHt and GSHr, and impaired antioxidant enzyme activities in drug-naive first-episode patients with schizophrenia. The GSH deficit seems to be implicated in psychosis, and may be an important indirect biomarker of oxidative stress in schizophrenia early in the course of illness. Finally, our results provide support for further studies of the possible role of antioxidants as neuroprotective therapeutic strategies for schizophrenia from early stages.</p

Instrumentos de avaliação do aleitamento materno e seu uso na prática clínica

RESUMO Objetivos Identificar instrumentos de avaliação da amamentação e sua aplicação na prática clínica, validação e adaptação transcultural. Método Revisão integrativa, realizada em seis bases de dados e em uma biblioteca eletrônica, entre agosto/2014-dezembro/2015, sem limitação temporal. Resultados Foram identificados 19 instrumentos de avaliação do AM. Destes, 12 foram validados e cinco foram adaptados transculturalmente. Quanto à aplicação, destacam-se seu uso para a avaliação do risco de desmame (BAPT) e a percepção/comportamento da mulher em amamentar (BSES-SF e IIFAS). Conclusão A identificação dos instrumentos disponíveis e de suas indicações para a avaliação do AM pode auxiliar profissionais na escolha pelo instrumento a ser utilizado, qualificando a assistência materno-infantil