Summaries

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OPTOELEKTRONIK AUF SILIZIUM – EINE HERAUSFORDERUNG FÜR DIE HALBLEITERPHYSIK

Derzeit vollzieht sich, noch nahezu unbemerkt, eine Revolution auf dem Beleuchtungssektor – die Ablösung der Glühbirne durch lichtemittierende (optoelektronische) Halbleiterbauelemente, die weißen Leuchtdioden (LEDs) auf der Basis von Galliumnitrid (GaN). Galliumnitrid wird bisher entweder auf Saphir- oder auf Siliziumkarbid-Substraten hergestellt. Beide Substratarten haben jedoch einige unerwünschte physikalische Eigenschaften und sind relativ teuer. Daher ist man seit Ende der 80er Jahre auf der Suche nach alternativen Substraten wie Silizium (Si). Auf Silizium ließe sich Galliumnitrid nicht nur großflächig und kostengünstig herstellen, es böte sich auch erstmals die faszinierende Möglichkeit der optoelektronischen Integration auf Silizium. In diesem Artikel berichten wir über die Forschungsaktivitäten der Abteilung Halbleiterepitaxie am Institut für Experimentelle Physik der Otto-von-Guericke-Universität Magdeburg auf diesem Gebiet, die bereits nach kurzer Zeit zu bauelementreifen Prototypen von blauen LEDs und Transistoren auf Silizium geführt haben

Extracting accurate capacitance voltage curves from impedance spectroscopy

We propose a method to obtain accurate capacitance-voltage (C-V) curves in the presence of multiple space charges. This method uses impedance spectroscopy to evaluate individual space charges separately. The advantage is that the knowledge of the exact equivalent circuit is not essentially needed. The comparison with other methods to calculate the doping concentration NA shows that our method is unaffected by series resistances and agrees best with the correct value of NA. The evaluation of the impedance spectra leads to a more thorough understanding of the respective Mott-Schottky plots

Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content

The luminescence properties of InxAl1−xN/GaN heterostructures are investigated systematically as a function of the In content (x = 0.067 − 0.208). The recombination between electrons confined in the two-dimensional electron gas and free holes in the GaN template is identified and analyzed. We find a systematic shift of the recombination with increasing In content from about 80 meV to only few meV below the GaN exciton emission. These results are compared with model calculations and can be attributed to the changing band profile and originating from the polarization gradient between InAlN and GaN

Termination of hollow core nanopipes in GaN by an AlN interlayer

"Nanopipes associated to screw dislocations are studied by transmission electron microscopy in Si-doped GaN films grown on silicon substrates. The observations revealed that dislocations had an empty core and that an AlN interlayer is suited to block their propagation. The termination mechanism is discussed in terms of strain and kinetic growth factors, which may affect the creation and propagation of nanopipes. According to the observations, it is proposed that either step pinning or lateral overgrowth occurring at the proximity of the defect assists in capping the nanopipe.

Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

We report on InAlN/GaN high electron mobility transistors (HEMTs) grown by metal organic vapor phase epitaxy on sapphire with ultrathin buffers. Two dimensional electron gas (2DEG) exhibiting high mobility (1100 cm(2) /V s) and low sheet resistivity (356 Omega/square) is achieved at room temperature for a buffer thickness as low as similar to 0.1 mu m. It is shown that despite a huge dislocation density imposed by this thin buffer, surface roughness is the main factor which affects the transport properties. In addition, sapphire surface nitridation is found to drastically affect the properties of the InAlN/GaN 2DEG. Eventually, HEMTs are processed from these heterostructures. Maximum current densities of 0.35 A/mm and current on-off ratios higher than 10(9) are measured, which make them suitable for high performance GaN based sensing in harsh environments. (C) 2013 AIP Publishing LLC