4 research outputs found

    High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p-i-n photodiodes

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    The 1.55 μm high-speed operation of GaAs-based p-i-n photodiodes was demonstrated and their design, growth and fabrication were discussed. A resonant-cavity-detector structure was used to selectively enhance the photoresponse at 1.55 μm. The bottom mirror of the resonant cavity was formed by a highly reflecting 15-pair GaAs/AlAs Bragg mirror and molecular-beam epitaxy was used for wafer growth. It was found that the fabricated devices exhibited a resonance of around 1548 nm and an enhancement factor of 7.5 was achieved when compared to the efficiency of a single-pass detector

    Theoretical and experimental study of the Suzuki-phase photonic crystal lattice by angle-resolved photoluminescence spectroscopy

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    A complete theoretical and experimental analysis of the photonic band structure for the Suzuki-phase lattice is presented. The band diagrams were calculated by two-dimensional plane wave expansion and three-dimensional guided-mode expansion methods. Angle resolved photoluminescence spectroscopy has been used to measure the emission of the photonic crystal structure realized in active InAsP/InP slabs. Photonic bands with a very low group velocity along an entire direction of the reciprocal lattice have been measured, which may have important applications on future photonic devices. The experimentally determined dispersion is in very good agreement with the calculated photonic bands. The presence of defect modes produced by microcavities in the Suzuki-phase lattice has also been established

    Laser nanosources based on planar photonic crystals as new platforms for nanophotonic devices

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    Two-dimensional photonic crystal lasers have been fabricated on III–V semiconductor slabs. Tuning of the spontaneous emission in micro and nanocavities has been achieved by accurate control of the slab thickness. Different structures, some of them of new application to photonic crystal lasers, have been fabricated like the Suzuki-phase or the coupled-cavity ring-like resonators. Laser emission has been obtained by pulsed optical pumping. Optical characterization of the lasing modes have been performed showing one or more laser peaks centred around 1.55 μm. Far field characterization of the emission pattern has been realized showing different patterns depending on the geometrical shape of the structures. These kinds of devices may be used as efficient nanolaser sources for optical communications or optical sensors
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