4 research outputs found
Fully Digital Ternary Content Addressable Memory using Ratio-less SRAM Cells and Hierarchical-AND Matching Comparator for Ultra-low-voltage Operation
A 36-bit x 32-entry fully digital ternaly content addressable memory (TCAM) using the Ratio-less 12-transistor SRAM (RL-12T-SRAM) technology and fully complementary hierarchical-AND matching comparators (HAMCs) was developed for ultra-low-voltage operation. The minimum operating supply voltage of 0.25V which is the less than half of the conventional TCAM was experimentally confirmed by the developed test chip.2017 International Conference on Solid State Devices and Materials (SSDM 2017), September 19-22, 2017, Sendai, Miyagi, Japa
Design and measurement of fully digital ternary content addressable memory using ratioless static random access memory cells and hierarchical-AND matching comparator
A 36-bit × 32-entry fully digital ternary content addressable memory (TCAM) using the ratioless static random access memory (RL-SRAM) technology and fully complementary hierarchical-AND matching comparators (HAMCs) was developed. Since its fully complementary and digital operation enables the effect of device variabilities to be avoided, it can operate with a quite low supply voltage. A test chip incorporating a conventional TCAM and a proposed 24-transistor ratioless TCAM (RL-TCAM) cells and HAMCs was developed using a 0.18 µm CMOS process. The minimum operating voltage of 0.25 V of the developed RL-TCAM, which is less than half of that of the conventional TCAM, was measured via the conventional CMOS push–pull output buffers with the level-shifting and flipping technique using optimized pull-up voltage and resistors
Design and measurement of fully digital ternary content addressable memory using ratioless static random access memory cells and hierarchical-AND matching comparator
A 36-bit × 32-entry fully digital ternary content addressable memory (TCAM) using the ratioless static random access memory (RL-SRAM) technology and fully complementary hierarchical-AND matching comparators (HAMCs) was developed. Since its fully complementary and digital operation enables the effect of device variabilities to be avoided, it can operate with a quite low supply voltage. A test chip incorporating a conventional TCAM and a proposed 24-transistor ratioless TCAM (RL-TCAM) cells and HAMCs was developed using a 0.18 µm CMOS process. The minimum operating voltage of 0.25 V of the developed RL-TCAM, which is less than half of that of the conventional TCAM, was measured via the conventional CMOS push–pull output buffers with the level-shifting and flipping technique using optimized pull-up voltage and resistors
Fully Digital Ternary Content Addressable Memory using Ratio-less SRAM Cells and Hierarchical-AND Matching Comparator for Ultra-low-voltage Operation
A 36-bit x 32-entry fully digital ternaly content addressable memory (TCAM) using the Ratio-less 12-transistor SRAM (RL-12T-SRAM) technology and fully complementary hierarchical-AND matching comparators (HAMCs) was developed for ultra-low-voltage operation. The minimum operating supply voltage of 0.25V which is the less than half of the conventional TCAM was experimentally confirmed by the developed test chip.2017 International Conference on Solid State Devices and Materials (SSDM 2017), September 19-22, 2017, Sendai, Miyagi, Japa