Locating Overlap Information in Quantum Systems

When discussing the black hole information problem the term ``information flow'' is frequently used in a rather loose fashion. In this article I attempt to make this notion more concrete. I consider a Hilbert space which is constructed as a tensor product of two subspaces (representing for example inside and outside the black hole). I discuss how the system has the capacity to contain information which is in NEITHER of the subspaces. I attempt to quantify the amount of information located in each of the two subspaces, and elsewhere, and analyze the extent to which unitary evolution can correspond to ``information flow''. I define the notion of ``overlap information'' which appears to be well suited to the problem.Comment: 25 pages plain LaTeX, no figures. Imperial/TP/93-94/2

Antireflective nanotextures for monolithic perovskite silicon tandem solar cells

Recently, we studied the effect of hexagonal sinusoidal textures on the reflective properties of perovskite silicon tandem solar cells using the finite element method FEM . We saw that such nanotextures, applied to the perovskite top cell, can strongly increase the current density utilization from 91 for the optimized planar reference to 98 for the best nanotextured device period 500 nm and peak to valley height 500 nm , where 100 refers to the Tiedje Yablonovitch limit. [D. Chen et al., J. Photonics Energy 8, 022601, 2018 , doi 10.1117 1.JPE.8.022601] In this manuscript we elaborate on some numerical details of that work we validate an assumption based on the Tiedje Yablonovitch limit, we present a convergence study for simulations with the finite element method, and we compare different configurations for sinusoidal nanotexture

Electromechanical coupling in free-standing AlGaN/GaN planar structures

The strain and electric fields present in free-standing AlGaN/GaN slabs are examined theoretically within the framework of fully-coupled continuum elastic and dielectric models. Simultaneous solutions for the electric field and strain components are obtained by minimizing the electric enthalpy. We apply constraints appropriate to pseudomorphic semiconductor epitaxial layers and obtain closed-form analytic expressions that take into account the wurtzite crystal anisotropy. It is shown that in the absence of free charges, the calculated strain and electric fields are substantially differently from those obtained using the standard model without electromechanical coupling. It is also shown, however, that when a two-dimensional electron gas is present at the AlGaN/GaN interface, a condition that is the basis for heterojunction field-effect transistors, the electromechanical coupling is screened and the decoupled model is once again a good approximation. Specific cases of these calculations corresponding to transistor and superlattice structures are discussed.Comment: revte

Statistical mechanical description of liquid systems in electric field

We formulate the statistical mechanical description of liquid systems for both polarizable and polar systems in an electric field in the $\mathbf{E}$-ensemble, which is the pendant to the thermodynamic description in terms of the free energy at constant potential. The contribution of the electric field to the configurational integral $\tilde{Q}_{N}(\mathbf{E})$ in the $\mathbf{E}$-ensemble is given in an exact form as a factor in the integrand of $\tilde{Q}_{N}(\mathbf{E})$. We calculate the contribution of the electric field to the Ornstein-Zernike formula for the scattering function in the $\mathbf{E}$-ensemble. As an application we determine the field induced shift of the critical temperature for polarizable and polar liquids, and show that the shift is upward for polarizable liquids and downward for polar liquids.Comment: 6 page

Stationary Points of Scalar Fields Coupled to Gravity

We investigate the dynamics of gravity coupled to a scalar field using a non-canonical form of the kinetic term. It is shown that its singular point represents an attractor for classical solutions and the stationary value of the field may occur distant from the minimum of the potential. In this paper properties of universes with such stationary states are considered. We reveal that such state can be responsible for modern dark energy density.Comment: H. Kroger, invited talk, FFP6, Udine (2004), revised version with corrected author lis

A Closed-Form Expression for the Gravitational Radiation Rate from Cosmic Strings

We present a new formula for the rate at which cosmic strings lose energy into gravitational radiation, valid for all piecewise-linear cosmic string loops. At any time, such a loop is composed of $N$ straight segments, each of which has constant velocity. Any cosmic string loop can be arbitrarily-well approximated by a piecewise-linear loop with $N$ sufficiently large. The formula is a sum of $O(N^4)$ polynomial and log terms, and is exact when the effects of gravitational back-reaction are neglected. For a given loop, the large number of terms makes evaluation ``by hand" impractical, but a computer or symbolic manipulator yields accurate results. The formula is more accurate and convenient than previous methods for finding the gravitational radiation rate, which require numerical evaluation of a four-dimensional integral for each term in an infinite sum. It also avoids the need to estimate the contribution from the tail of the infinite sum. The formula has been tested against all previously published radiation rates for different loop configurations. In the cases where discrepancies were found, they were due to errors in the published work. We have isolated and corrected both the analytic and numerical errors in these cases. To assist future work in this area, a small catalog of results for some simple loop shapes is provided.Comment: 29 pages TeX, 16 figures and computer C-code available via anonymous ftp from directory pub/pcasper at alpha1.csd.uwm.edu, WISC-MILW-94-TH-10, (section 7 has been expanded, two figures added, and minor grammatical changes made.

Quantum Lightning Never Strikes the Same State Twice

Public key quantum money can be seen as a version of the quantum no-cloning theorem that holds even when the quantum states can be verified by the adversary. In this work, investigate quantum lightning, a formalization of "collision-free quantum money" defined by Lutomirski et al. [ICS'10], where no-cloning holds even when the adversary herself generates the quantum state to be cloned. We then study quantum money and quantum lightning, showing the following results: - We demonstrate the usefulness of quantum lightning by showing several potential applications, such as generating random strings with a proof of entropy, to completely decentralized cryptocurrency without a block-chain, where transactions is instant and local. - We give win-win results for quantum money/lightning, showing that either signatures/hash functions/commitment schemes meet very strong recently proposed notions of security, or they yield quantum money or lightning. - We construct quantum lightning under the assumed multi-collision resistance of random degree-2 systems of polynomials. - We show that instantiating the quantum money scheme of Aaronson and Christiano [STOC'12] with indistinguishability obfuscation that is secure against quantum computers yields a secure quantum money schem

Characterization of nanometer-sized, mechanically exfoliated graphene on the H-passivated Si(100) surface using scanning tunnelling microscopy

We have developed a method for depositing graphene monolayers and bilayers with minimum lateral dimensions of 2-10 nm by the mechanical exfoliation of graphite onto the Si(100)-2x1:H surface. Room temperature, ultra-high vacuum (UHV) tunnelling spectroscopy measurements of nanometer-sized single-layer graphene reveal a size dependent energy gap ranging from 0.1-1 eV. Furthermore, the number of graphene layers can be directly determined from scanning tunnelling microscopy (STM) topographic contours. This atomistic study provides an experimental basis for probing the electronic structure of nanometer-sized graphene which can assist the development of graphene-based nanoelectronics.Comment: Accepted for publication in Nanotechnolog