Towards the insulator-to-metal transition at the surface of ion-gated nanocrystalline diamond films

Hole doping can control the conductivity of diamond either through boron substitution, or carrier accumulation in a field-effect transistor. In this work, we combine the two methods to investigate the insulator-to-metal transition at the surface of nanocrystalline diamond films. The finite boron doping strongly increases the maximum hole density which can be induced electrostatically with respect to intrinsic diamond. The ionic gate pushes the conductivity of the film surface away from the variable-range hopping regime and into the quantum critical regime. However, the combination of the strong intrinsic surface disorder due to a non-negligible surface roughness, and the introduction of extra scattering centers by the ionic gate, prevents the surface accumulation layer to reach the metallic regime.Comment: 5 pages, 4 figure

A new diamond biosensor with integrated graphitic microchannels for detecting quantal exocytic events from chromaffin cells

The quantal release of catecholamines from neuroendocrine cells is a key mechanism which has been investigated with a broad range of materials and devices, among which carbon-based materials such as carbon fibers, diamond-like carbon, carbon nanotubes and nanocrystalline diamond. In the present work we demonstrate that a MeV-ion-microbeam lithographic technique can be successfully employed for the fabrication of an all-carbon miniaturized cellular bio-sensor based on graphitic micro-channels embedded in a single-crystal diamond matrix. The device was functionally characterized for the in vitro recording of quantal exocytic events from single chromaffin cells, with high sensitivity and signal-to-noise ratio, opening promising perspectives for the realization of monolithic all-carbon cellular biosensors

Towards the insulator-to-metal transition at the surface of ion-gated nanocrystalline diamond films

Hole doping can control the conductivity of diamond either through boron substitution, or carrier accumulation in a field-effect transistor. In this work, we combine the two methods to investigate the insulator-to-metal transition at the surface of nanocrystalline diamond films. The finite boron doping strongly increases the maximum hole density which can be induced electrostatically with respect to intrinsic diamond. The ionic gate pushes the conductivity of the film surface away from the variable-range hopping regime and into the quantum critical regime. However, the combination of the strong intrinsic surface disorder due to a non-negligible surface roughness, and the introduction of extra scattering centers by the ionic gate, prevents the surface accumulation layer to reach the metallic regime.Comment: 5 pages, 4 figure

Quantal Release of Dopamine and Action Potential Firing Detected in Midbrain Neurons by Multifunctional Diamond-Based Microarrays

Micro-Graphitic Single Crystal Diamond Multi Electrode Arrays (μG-SCD-MEAs) have so far been used as amperometric sensors to detect catecholamines from chromaffin cells and adrenal gland slices. Besides having time resolution and sensitivity that are comparable with carbon fiber electrodes, that represent the gold standard for amperometry, μG-SCD-MEAs also have the advantages of simultaneous multisite detection, high biocompatibility and implementation of amperometric/potentiometric protocols, aimed at monitoring exocytotic events and neuronal excitability. In order to adapt diamond technology to record neuronal activity, the μG-SCD-MEAs in this work have been interfaced with cultured midbrain neurons to detect electrical activity as well as quantal release of dopamine (DA). μG-SCD-MEAs are based on graphitic sensing electrodes that are embedded into the diamond matrix and are fabricated using MeV ion beam lithography. Two geometries have been adopted, with 4 × 4 and 8 × 8 microelectrodes (20 μm × 3.5 μm exposed area, 200 μm spacing). In the amperometric configuration, the 4 × 4 μG-SCD-MEAs resolved quantal exocytosis from midbrain dopaminergic neurons. KCl-stimulated DA release occurred as amperometric spikes of 15 pA amplitude and 0.5 ms half-width, at a mean frequency of 0.4 Hz. When used as potentiometric multiarrays, the 8 × 8 μG-SCD-MEAs detected the spontaneous firing activity of midbrain neurons. Extracellularly recorded action potentials (APs) had mean amplitude of ∼-50 μV and occurred at a mean firing frequency of 0.7 Hz in 67% of neurons, while the remaining fired at 6.8 Hz. Comparable findings were observed using conventional MEAs (0.9 and 6.4 Hz, respectively). To test the reliability of potentiometric recordings with μG-SCD-MEAs, the D2-autoreceptor modulation of firing was investigated by applying levodopa (L-DOPA, 20 μM), and comparing μG-SCD-MEAs, conventional MEAs and current-clamp recordings. In all cases, L-DOPA reduced the spontaneous spiking activity in most neurons by 70%, while the D2-antagonist sulpiride reversed this effect. Cell firing inhibition was generally associated with increased APs amplitude. A minority of neurons was either insensitive to, or potentiated by L-DOPA, suggesting that AP recordings originate from different midbrain neuronal subpopulations and reveal different modulatory pathways. Our data demonstrate, for the first time, that μG-SCD-MEAs are multi-functional biosensors suitable to resolve real-time DA release and AP firing in in vitro neuronal networks

Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films

Diamond, a well-known wide-bandgap insulator, becomes a low-temperature superconductor upon substitutional doping of carbon with boron. However, limited boron solubility and significant lattice disorder introduced by boron doping prevent attaining the theoretically-predicted high-temperature superconductivity. Here we present an alternative co-doping approach, based on the combination of ionic gating and boron substitution, in hydrogenated thin films epitaxially grown on (111)- and (110)-oriented single crystals. Gate-dependent electric transport measurements show that the effect of boron doping strongly depends on the crystal orientation. In the (111) surface, it strongly suppresses the charge-carrier mobility and moderately increases the gate-induced doping, while in the (110) surface it strongly increases the gate-induced doping with a moderate reduction in mobility. In both cases the maximum total carrier density remains below 2x10^(14) cm^(−2), three times lower than the value theoretically required for high-temperature superconductivity. Density-functional theory calculations show that this strongly orientation-dependent effect is due to the specific energy-dependence of the density of states in the two surfaces. Our results allow to determine the band filling and doping-dependence of the hole scattering lifetime in the two surfaces, showing the occurrence of a frustrated insulator-to-metal transition in the (110) surface and of a re-entrant insulator-to-metal transition in the (111) surface

Analytical Determination of Serotonin Exocytosis in Human Platelets with BDD-on-Quartz MEA Devices

Amperometry is arguably the most widely used technique for studying the exocytosis of biological amines. However, the scarcity of human tissues, particularly in the context of neurological diseases, poses a challenge for exocytosis research. Human platelets, which accumulate 90% of blood serotonin, release it through exocytosis. Nevertheless, single-cell amperometry with encapsulated carbon fibers is impractical due to the small size of platelets and the limited number of secretory granules on each platelet. The recent technological improvements in amperometric multi-electrode array (MEA) devices allow simultaneous recordings from several high-performance electrodes. In this paper, we present a comparison of three MEA boron-doped diamond (BDD) devices for studying serotonin exocytosis in human platelets: (i) the BDD-on-glass MEA, (ii) the BDD-on-silicon MEA, and (iii) the BDD on amorphous quartz MEA (BDD-on-quartz MEA). Transparent electrodes offer several advantages for observing living cells, and in the case of platelets, they control activation/aggregation. BDD-on-quartz offers the advantage over previous materials of combining excellent electrochemical properties with transparency for microscopic observation. These devices are opening exciting perspectives for clinical applications

Towards electric-field-induced superconductivity in ion-gated diamond surfaces

In this Invited Talk, I will summarize the main results in the literature and discuss the work which has been carried out in our group in order to reach the predicted field-induced superconducting state at the surface of ion-gated diamond. Since ionic gating alone has been shown to be insufficient to induce the required values of charge-carrier density, we attempted a co-doping approach where EDL transistors were fabricated on different boron-doped diamond surfaces. In this approach, the boron dopants play a dual role: On the one hand, they provide an intrinsic hole density in the system which is larger than that obtained by pure hydrogen termination, thus reducing the induced hole density one has to provide with the ionic gate to drive the 2-dimensional hole gas into the SC phase. On the other hand, by improving the metallicity of the system, they can potentially increase the capacitance of the electric doubel layer and increase the maximum attainable values of hole density