Outward FDI of Malaysia: An Empirical Examination from Macroeconomic Perspective

Outward FDI of Malaysia was nearly non-existent prior to 1970s. Nonetheless, recently Malaysia has not only been able to sustain FDI inflows position, but also emerged as the fifth largest investor among the developing economies in Asia region (UNTACD, 2005). This study aims to investigate the selected macroeconomic determinants of outward FDI of Malaysia, namely income, exchange rate and openness. The Johansen and Juselius cointegration test and the vector error correction model are applied in this study to analyze the quarterly data from 1991:Q1 to 2004:Q4. The findings verified that the outward FDI of Malaysia is determined by income, exchange rate and openness of the economy in both the short- and long-run.

Amortised resource analysis with separation logic

Type-based amortised resource analysis following Hofmann and Jost—where resources are associated with individual elements of data structures and doled out to the programmer under a linear typing discipline—have been successful in providing concrete resource bounds for functional programs, with good support for inference. In this work we translate the idea of amortised resource analysis to imperative languages by embedding a logic of resources, based on Bunched Implications, within Separation Logic. The Separation Logic component allows us to assert the presence and shape of mutable data structures on the heap, while the resource component allows us to state the resources associated with each member of the structure. We present the logic on a small imperative language with procedures and mutable heap, based on Java bytecode. We have formalised the logic within the Coq proof assistant and extracted a certified verification condition generator. We demonstrate the logic on some examples, including proving termination of in-place list reversal on lists with cyclic tails

Silicon Nanocrystals and Amorphous Nanoclusters in SiO_x and SiN_x: Atomic, Electronic Structure, and Memristor Effects

Semiconductor nanocrystals in dielectric films are interesting from fundamental aspect, because quantum-size effects in them appear even at room temperature, so such objects can be called as “quantum dots”. Silicon nanocrystals and amorphous silicon nanoclusters in substoichiometric SiOx and SiNx films are traps for electrons and holes that apply in nonvolatile memory devices. In this chapter the formation of silicon nanocrystals and silicon amorphous nanoclusters in SiOx and SiNx films was studied using structural and optical methods. The phonon confinement model was refined to obtain sizes of silicon nanocrystals from analysis of Raman scattering data. Structural models that lead to nanoscale potential fluctuation in amorphous SiOx and SiNx are considered. A new structural model which is intermediate between random mixture and random bonding models is proposed. Memristor effects in SiOx films are discussed

A Statistical Learning Regression Model Utilized To Determine Predictive Factors of Social Distancing During COVID-19 Pandemic

In an application of the mathematical theory of statistics, predictive regression modelling can be used to determine if there is a trend to predict the response variable of social distancing in terms of multiple predictor input “predictor” variables. In this study the social distancing is measured as the percentage reduction in average mobility by GPS records, and the mathematical results obtained are interpreted to determine what factors drive that response. This study was done on county level data from the state of Florida during the COVID-19 pandemic, and it is found that the most deterministic predictors are county population density along with median income

Raman scattering by optical phonons in In1−y−zAlyGazAs lattice matched to InP

We report on Raman scattering by longitudinal optical phonons in In1−y−zAlyGazAs (1−y−z=0.53) lattice matched to InP. The quaternary alloys were grown on (001) InP by molecular beam epitaxy. The phonon spectra exhibit three‐mode behavior. The frequencies of AlAs‐ and GaAs‐like modes vary linearly with the concentration of Al (or Ga) while the position of the InAs‐like phonon remains nearly constant. The data show no evidence of alloy clustering.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/71267/2/APPLAB-53-17-1652-1.pd

A Statistical Learning Regression Model utilized to determine predictive factors of social distancing during COVID-19 pandemic

In an application of the mathematical theory of statistics, predictive regression modeling can be used to determine if there is a trend to predict the response variable of social distancing in terms of multiple predictor input variables. In this study, the social distancing was measured as the percentage reduction in average mobility by GPS records, and the mathematical results obtained are interpreted to determine what factors drive that response. This study was done with county level data obtained from the State of Florida during the COVID-19 pandemic. The predicting factors found that were most deterministic was the county population density along with median income

Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes

The properties of In0.24Ga0.76As/GaAs and GaAs/In0.05Ga0.58Al0.37As superlattice photodiodes grown by molecular beam epitaxy have been investigated. From the temporal response characteristics, deconvolved rise times ∼60–100 ps are obtained. The measured responsivities of the photodiodes with dark currents of 5–10 nA at 10 V are ∼0.4 A/W, which correspond to peak external quantum efficiencies of ∼60%. These results indicate that very high performance photodiodes can be realized with strained layers.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70619/2/APPLAB-51-15-1164-1.pd

Molecular beam epitaxial GaAs optical detectors on silica fibers

By using molecular beam epitaxy and post‐growth annealing techniques, we have successfully made GaAs interdigitated photoconductive detectors on D‐shaped silica fibers. The detectors exhibit low leakage current and internal photoconductive gains of up to 15 are measured. To our knowledge this is the first realization of active III‐V optoelectronic devices on fibers and opens up the possibility of realizing optoelectronic integration and circuits directly on fibers.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70198/2/APPLAB-52-21-1768-1.pd