Software-Based Burst Mode Reception Implementation for Time-domain Wavelength Interleaved Networks

International audienceWe demonstrate burst mode functionality on a continuous commercial receiver piloted by real-time control plane in an end-to-end sub-wavelength switching test-bed. The results show the receiver can maintain its continuous performance with marginal penalty regardless of data burst absence duration. Introduction Switching sub-wavelength entities inside the big pipes channels appears as a promising solution for the operator that has to build a network with an efficient filling and different services. Access to the sub-wavelength granularity directly at the optical layer is an alternative to electrical solution to reduce cost and power consumption by saving on electrical transit and electrical-to-optical and optical-to-electrical conversions. Amongst the various Sub-Lambda Photonically Switched Network (SLPSN) solutions, Time-domain Wavelength Interleaved Networking (TWIN) is an interesting solution since it provides optically transparent sub-wavelength grooming at intermediate/core nodes, while the intelligence and processing power remains at control plane and the edge node

First experimental demonstration of real-time orchestration in a Multi-head metro network

International audienceWe present for the first time the experimental demonstration of a Real-Time control-plane on the Multi-hEad sub-wavElength swiTching (MEET), Metro architecture. The key control assets are calculated and provided to the edge nodes in a form of grant files. These grant files eliminate the contention possibility at source nodes and destinations, thus they offer a lossless passive optical grooming and multiplexing/demultiplexing at the intermediate nodes. The experimental results validate the control plane structure designed based on a deterministic operating system well scalable for a regional metro network

Influence of experimental parameters on physical properties of porous silicon and oxidized porous silicon layers

International audienceThis paper reports physical properties of porous silicon and oxidized porous silicon, manufactured by anodisation from heavily p-type doped silicon wafers as a function of experimental parameters. The growth rate and refractive index of the layers were studied at different applied current densities and glycerol concentrations in electrolyte. When the current density varied from 5 to 100 mA/cm2, the refractive index was between 1.2 and 2.4 which corresponded to a porosity range from 42 to 85%. After oxidation, the porosity decreased and was between 2 and 45% for a refractive index range from 1.22 to 1.46. The thermal processing also induced an increase in thickness which was dependent on the initial porosity. This increase in thickness was more important for the lowest porosities. Lastly, the roughness of the porous layer/silicon substrate interface was studied at different applied current densities and glycerol concentrations in solution. Roughness decreased when the current density or glycerol concentration increased. Moreover, roughness was also reduced by thermal oxidation