4,315 research outputs found

    Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition

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    Cataloged from PDF version of article.Gallium nitride (GaN), aluminum nitride (AlN), and AlxGa(1-x)N films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200 degrees C on c-plane sapphire and Si substrates. The dependence of film structure, absorption edge, and refractive index on postdeposition annealing were examined by x-ray diffraction, spectrophotometry, and spectroscopic ellipsometry measurements, respectively. Well-adhered, uniform, and polycrystalline wurtzite (hexagonal) GaN, AlN, and AlxGa1-xN films were prepared at low deposition temperature. As revealed by the x-ray diffraction analyses, crystallite sizes of the films were between 11.7 and 25.2 nm. The crystallite size of as-deposited GaN film increased from 11.7 to 12.1 and 14.4 nm when the annealing duration increased from 30 min to 2 h (800 degrees C). For all films, the average optical transmission was similar to 85% in the visible (VIS) and near infrared spectrum. The refractive indices of AlN and AlxGa1-xN were lower compared to GaN thin films. The refractive index of as-deposited films decreased from 2.33 to 2.02 (lambda = 550 nm) with the increased Al content x (0 400 nm). Postdeposition annealing at 900 degrees C for 2 h considerably lowered the refractive index value of GaN films (2.33-1.92), indicating a significant phase change. The optical bandgap of as-deposited GaN film was found to be 3.95 eV, and it decreased to 3.90 eV for films annealed at 800 degrees C for 30 min and 2 h. On the other hand, this value increased to 4.1 eV for GaN films annealed at 900 degrees C for 2 h. This might be caused by Ga2O3 formation and following phase change. The optical bandgap value of as-deposited AlxGa1-xN films decreased from 5.75 to 5.25 eV when the x values decreased from 1 to 0.68. Furthermore, postdeposition annealing did not affect the bandgap of Al-rich films. (C) 2014 American Vacuum Society

    Hollow cathode plasma-assisted atomic layer deposition of crystalline AIN, GaN and AI Ga1- N thin films at low temperatures

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    Cataloged from PDF version of article.The authors report on the use of hollow cathode plasma for low-temperature plasma-assisted atomic layer deposition (PA-ALD) of crystalline AlN, GaN and AlxGa1 xN thin films with low impurity concentrations. Depositions were carried out at 200 C using trimethylmetal precursors and NH3 or N2/H2 plasma. X-ray photoelectron spectroscopy showed the presence of 2.5–3 at.% O in AlN and 1.5–1.7 at.% O in GaN films deposited using NH3 and N2/H2 plasma, respectively. No C impurities were detected within the films. Secondary ion mass spectroscopy analyses performed on the films deposited using NH3 plasma revealed the presence of O, C (both <1 at.%), and H impurities. GIXRD patterns indicated polycrystalline thin films with wurtzite crystal structure. Hollow cathode PA-ALD parameters were optimized for AlN and GaN thin films using N2/H2 plasma. Trimethylmetal and N2/H2 saturation curves evidenced the selflimiting growth of AlN and GaN at 200 C. AlN exhibited linear growth with a growth per cycle (GPC) of 1.0 A. For GaN, the GPC decreased with the increasing number of deposition cycles, indicating ˚ substrate-enhanced growth. The GPC calculated from a 900-cycle GaN deposition was 0.22 A. ˚ Ellipsometric spectra of the samples were modeled using the Cauchy dispersion function, from which the refractive indices of 59.2 nm thick AlN and 20.1 nm thick GaN thin films were determined to be 1.94 and 2.17 at 632 nm, respectively. Spectral transmission measurements of AlN, GaN and AlxGa1 xN thin films grown on double side polished sapphire substrates revealed near-ideal visible transparency with minimal absorption. Optical band edge values of the AlxGa1 xN films shifted to lower wavelengths with the increasing Al content, indicating the tunability of band edge values with the alloy composition

    Tkachenko modes as sources of quasiperiodic pulsar spin variations

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    We study the long wavelength shear modes (Tkachenko waves) of triangular lattices of singly quantized vortices in neutron star interiors taking into account the mutual friction between the superfluid and the normal fluid and the shear viscosity of the normal fluid. The set of Tkachenko modes that propagate in the plane orthogonal to the spin vector are weakly damped if the coupling between the superfluid and normal fluid is small. In strong coupling, their oscillation frequencies are lower and are undamped for small and moderate shear viscosities. The periods of these modes are consistent with the observed ~100-1000 day variations in spin of PSR 1828-11.Comment: 7 pages, 3 figures, uses RevTex, v2: added discussion/references, matches published versio

    Low-Temperature Deposition of Hexagonal Boron Nitride via Sequential Injection of Triethylboron and N2/H2 Plasma

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    Cataloged from PDF version of article.Hexagonal boron nitride (hBN) thin films were deposited on silicon and quartz substrates using sequential exposures of triethylboron and N 2 /H 2 plasma in a hollow-cathode plasma- assisted atomic layer deposition reactor at low temperatures ( ≤ 450 ° C). A non-saturating film deposition rate was observed for substrate temperatures above 250 ° C. BN films were charac- terized for their chemical composition, crystallinity, surface morphology, and optical properties. X-ray photoelectron spec- troscopy (XPS) depicted the peaks of boron, nitrogen, carbon, and oxygen at the film surface. B 1s and N 1s high-resolution XPS spectra confirmed the presence of BN with peaks located at 190.8 and 398.3 eV, respectively. As deposited films were polycrystalline, single-phase hBN irrespective of the deposition temperature. Absorption spectra exhibited an optical band edge at ~ 5.25 eV and an optical transmittance greater than 90% in the visible region of the spectrum. Refractive index of the hBN film deposited at 450 ° C was 1.60 at 550 nm, which increased to 1.64 after postdeposition annealing at 800 ° C for 30 min. These results represent the first demonstration of hBN deposi- tion using low-temperature hollow-cathode plasma-assisted sequential deposition technique. © 2014 The American Ceramic Society

    Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures

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    Cataloged from PDF version of article.Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices. © 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)

    Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition

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    Cataloged from PDF version of article.Aluminum nitride (AlN)/boron nitride (BN) bishell hollow nanofibers (HNFs) have been fabricated by successive atomic layer deposition (ALD) of AlN and sequential chemical vapor deposition (CVD) of BN on electrospun polymeric nanofibrous template. A four-step fabrication process was utilized: (i) fabrication of polymeric (nylon 6,6) nanofibers via electrospinning, (ii) hollow cathode plasma-assisted ALD of AlN at 100 degrees C onto electrospun polymeric nanofibers, (iii) calcination at 500 degrees C for 2 h in order to remove the polymeric template, and (iv) sequential CVD growth of BN at 450 degrees C. AlN/BN HNFs have been characterized for their chemical composition, surface morphology, crystal structure, and internal nanostructure using X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy, and selected area electron diffraction. Measurements confirmed the presence of crystalline hexagonal BN and AlN within the three dimensional (3D) network of bishell HNFs with relatively low impurity content. In contrast to the smooth surface of the inner AlN layer, outer BN coating showed a highly rough 3D morphology in the form of BN nano-needle crystallites. It is shown that the combination of electrospinning and plasma-assisted low-temperature ALD/CVD can produce highly controlled multi-layered bishell nitride ceramic hollow nanostructures. While electrospinning enables easy fabrication of nanofibrous template, self-limiting reactions of plasma-assisted ALD and sequential CVD provide control over the wall thicknesses of AlN and BN layers with sub-nanometer accuracy. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License

    Quartz Plate Calorimeter as SLHC Upgrade to CMS Hadronic EndCap Calorimeters

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    Due to an expected increase in radiation damage under super-LHC conditions, we propose to substitute the scintillator tiles in the original design of the hadronic endcap (HE) calorimeter with quartz plates. Quartz is proved to be radiation hard by the radiation damage tests with electron, proton, neutron and gamma beams. Using wavelength shifting fibers, it is possible to collect efficiently the Cherenkov light generated in quartz plates. This paper summarizes the results from various test beams, bench tests, and Geant4 simulations done on methods of collecting light from quartz plates, as well as radiation hardness tests on quartz material

    Intra-articular knee haemangioma originating from the anterior cruciate ligament: a case report

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    <p>Abstract</p> <p>Introduction</p> <p>Synovial haemangioma is a rare intra-articular benign tumour, which may arise from any synovium-lined surface, but particularly in the knee joint. Synovial haemangioma originating from the anterior cruciate ligament has not been reported previously.</p> <p>Case presentation</p> <p>A 34-year-old man presented with a history of intermittent knee pain, locking and swelling.</p> <p>Conclusion</p> <p>Knee intra-articular haemangioma, a very rare benign tumour, is often misdiagnosed. Magnetic resonance imaging is effective in detecting this lesion and should be performed in cases of persistent knee swelling and pain.</p

    Automatically generating streamlined constraint models with ESSENCE and CONJURE

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    Streamlined constraint reasoning is the addition of uninferred constraints to a constraint model to reduce the search space, while retaining at least one solution. Previously, effective streamlined models have been constructed by hand, requiring an expert to examine closely solutions to small instances of a problem class and identify regularities. We present a system that automatically generates many conjectured regularities for a given Essence specification of a problem class by examining the domains of decision variables present in the problem specification. These conjectures are evaluated independently and in conjunction with one another on a set of instances from the specified class via an automated modelling tool-chain comprising of Conjure, Savile Row and Minion. Once the system has identified effective conjectures they are used to generate streamlined models that allow instances of much larger scale to be solved. Our results demonstrate good models can be identified for problems in combinatorial design, Ramsey theory, graph theory and group theory - often resulting in order of magnitude speed-ups.Postprin

    Clinicopathological Profile and Surgical Treatment of Abdominal Tuberculosis: A Single Centre Experience in Northwestern Tanzania.

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    Abdominal tuberculosis continues to be a major public health problem worldwide and poses diagnostic and therapeutic challenges to general surgeons practicing in resource-limited countries. This study was conducted to describe the clinicopathological profile and outcome of surgical treatment of abdominal tuberculosis in our setting and compare with what is described in literature. A prospective descriptive study of patients who presented with abdominal tuberculosis was conducted at Bugando Medical Centre (BMC) in northwestern Tanzania from January 2006 to February 2012. Ethical approval to conduct the study was obtained from relevant authorities. Statistical data analysis was performed using SPSS version 17.0. Out of 256 patients enrolled in the study, males outnumbered females. The median age was 28 years (range = 16-68 years). The majority of patients (77.3%) had primary abdominal tuberculosis. A total of 127 (49.6%) patients presented with intestinal obstruction, 106 (41.4%) with peritonitis, 17 (6.6%) with abdominal masses and 6 (2.3%) patients with multiple fistulae in ano. Forty-eight (18.8%) patients were HIV positive. A total of 212 (82.8%) patients underwent surgical treatment for abdominal tuberculosis. Bands /adhesions (58.5%) were the most common operative findings. Ileo-caecal region was the most common bowel involved in 122 (57.5%) patients. Release of adhesions and bands was the most frequent surgical procedure performed in 58.5% of cases. Complication and mortality rates were 29.7% and 18.8% respectively. The overall median length of hospital stay was 32 days and was significantly longer in patients with complications (p < 0.001). Advanced age (age ≥ 65 years), co-morbid illness, late presentation, HIV positivity and CD4+ count < 200 cells/μl were statistically significantly associated with mortality (p < 0.0001). The follow up of patients were generally poor as only 37.5% of patients were available for follow up at twelve months after discharge. Abdominal tuberculosis constitutes a major public health problem in our environment and presents a diagnostic challenge requiring a high index of clinical suspicion. Early diagnosis, early anti-tuberculous therapy and surgical treatment of the associated complications are essential for survival
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