5,094 research outputs found
Pulsed Beam Tests at the SANAEM RFQ Beamline
A proton beamline consisting of an inductively coupled plasma (ICP) source,
two solenoid magnets, two steerer magnets and a radio frequency quadrupole
(RFQ) is developed at the Turkish Atomic Energy Authority's (TAEA) Saraykoy
Nuclear Research and Training Center (SNRTC-SANAEM) in Ankara. In Q4 of 2016,
the RFQ was installed in the beamline. The high power tests of the RF power
supply and the RF transmission line were done successfully. The high power RF
conditioning of the RFQ was performed recently. The 13.56 MHz ICP source was
tested in two different conditions, CW and pulsed. The characterization of the
proton beam was done with ACCTs, Faraday cups and a pepper-pot emittance meter.
Beam transverse emittance was measured in between the two solenoids of the
LEBT. The measured beam is then reconstructed at the entrance of the RFQ by
using computer simulations to determine the optimum solenoid currents for
acceptance matching of the beam. This paper will introduce the pulsed beam test
results at the SANAEM RFQ beamline. In addition, the high power RF conditioning
of the RFQ will be discussed.Comment: 6 pages, 6 figures. Proceedings of the International Particle
Accelerator Conference 2017 (IPAC'17), May 14-19, 2017, TUPAB015, p. 134
Project PROMETHEUS: Design and Construction of a Radio Frequency Quadrupole at TAEK
The PROMETHEUS Project is ongoing for the design and development of a 4-vane
radio frequency quadrupole (RFQ) together with its H+ ion source, a low energy
beam transport (LEBT) line and diagnostics section. The main goal of the
project is to achieve the acceleration of the low energy ions up to 1.5 MeV by
an RFQ (352 MHz) shorter than 2 meter. A plasma ion source is being developed
to produce a 20 keV, 1 mA H+ beam. Simulation results for ion source,
transmission and beam dynamics are presented together with analytical studies
performed with newly developed RFQ design code DEMIRCI. Simulation results
shows that a beam transmission 99% could be achieved at 1.7 m downstream
reaching an energy of 1.5 MeV. As the first phase an Aluminum RFQ prototype,
the so-called cold model, will be built for low power RF characterization. In
this contribution the status of the project, design considerations, simulation
results, the various diagnostics techniques and RFQ manufacturing issues are
discussed.Comment: 4 pages, 8 figures, Proceedings of the 2nd International Beam
Instrumentation Conference 2013 (IBIC'13), 16-19 Sep 2013, WEPC02, p. 65
Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
Cataloged from PDF version of article.Gallium nitride (GaN), aluminum nitride (AlN), and AlxGa(1-x)N films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200 degrees C on c-plane sapphire and Si substrates. The dependence of film structure, absorption edge, and refractive index on postdeposition annealing were examined by x-ray diffraction, spectrophotometry, and spectroscopic ellipsometry measurements, respectively. Well-adhered, uniform, and polycrystalline wurtzite (hexagonal) GaN, AlN, and AlxGa1-xN films were prepared at low deposition temperature. As revealed by the x-ray diffraction analyses, crystallite sizes of the films were between 11.7 and 25.2 nm. The crystallite size of as-deposited GaN film increased from 11.7 to 12.1 and 14.4 nm when the annealing duration increased from 30 min to 2 h (800 degrees C). For all films, the average optical transmission was similar to 85% in the visible (VIS) and near infrared spectrum. The refractive indices of AlN and AlxGa1-xN were lower compared to GaN thin films. The refractive index of as-deposited films decreased from 2.33 to 2.02 (lambda = 550 nm) with the increased Al content x (0 400 nm). Postdeposition annealing at 900 degrees C for 2 h considerably lowered the refractive index value of GaN films (2.33-1.92), indicating a significant phase change. The optical bandgap of as-deposited GaN film was found to be 3.95 eV, and it decreased to 3.90 eV for films annealed at 800 degrees C for 30 min and 2 h. On the other hand, this value increased to 4.1 eV for GaN films annealed at 900 degrees C for 2 h. This might be caused by Ga2O3 formation and following phase change. The optical bandgap value of as-deposited AlxGa1-xN films decreased from 5.75 to 5.25 eV when the x values decreased from 1 to 0.68. Furthermore, postdeposition annealing did not affect the bandgap of Al-rich films. (C) 2014 American Vacuum Society
Embryonic stem cell virus, a recombinant murine retrovirus with expression in embryonic stem cells.
Tkachenko modes as sources of quasiperiodic pulsar spin variations
We study the long wavelength shear modes (Tkachenko waves) of triangular
lattices of singly quantized vortices in neutron star interiors taking into
account the mutual friction between the superfluid and the normal fluid and the
shear viscosity of the normal fluid. The set of Tkachenko modes that propagate
in the plane orthogonal to the spin vector are weakly damped if the coupling
between the superfluid and normal fluid is small. In strong coupling, their
oscillation frequencies are lower and are undamped for small and moderate shear
viscosities. The periods of these modes are consistent with the observed
~100-1000 day variations in spin of PSR 1828-11.Comment: 7 pages, 3 figures, uses RevTex, v2: added discussion/references,
matches published versio
Quartz Cherenkov Counters for Fast Timing: QUARTIC
We have developed particle detectors based on fused silica (quartz) Cherenkov
radiators read out with micro-channel plate photomultipliers (MCP-PMTs) or
silicon photomultipliers (SiPMs) for high precision timing (Sigma(t) about
10-15 ps). One application is to measure the times of small angle protons from
exclusive reactions, e.g. p + p - p + H + p, at the Large Hadron Collider, LHC.
They may also be used to measure directional particle fluxes close to external
or stored beams. The detectors have small areas (square cm), but need to be
active very close (a few mm) to the intense LHC beam, and so must be radiation
hard and nearly edgeless. We present results of tests of detectors with quartz
bars inclined at the Cherenkov angle, and with bars in the form of an "L" (with
a 90 degree corner). We also describe a possible design for a fast timing
hodoscope with elements of a few square mm.Comment: 24 pages, 14 figure
Structural, optical and electrical characteristics BaSrTiOx thin films: Effect of deposition pressure and annealing
Among perovskite oxide materials, BaSrTiOx (BST) has attracted great attention due to its potential applications in oxide-based electronics. However, reliability and efficiency of BST thin films strongly depend on the precise knowledge of the film microstructure, as well as optical and electrical properties. In the present work, BST films were deposited at room temperature using radio frequency magnetron sputtering technique. The impact of deposition pressure, partial oxygen flow, and post-deposition annealing treatment on film microstructure, surface morphology, refractive index, and dielectric constants were studied by X-ray diffraction, scanning electron microscopy, spectrophotometry, ellipsometry, photoluminescence, as well as capacitance-voltage measurements. Well-adhered and uniform amorphous films were obtained at room temperature. For all as-deposited films, the average optical transmission was ~ 85% in the VIS-NIR spectrum. The refractive indices of BST films were in the range of 1.90–2.07 (λ = 550 nm). Post-deposition annealing at 800 °C for 1 h resulted in polycrystalline thin films with increased refractive indices and dielectric constants, however reduced optical transmission values. Frequency dependent dielectric constants were found to be in the range of 46–72. However, the observed leakage current was relatively small, about 1 μA. The highest FOM values were obtained for films deposited at 0.67 Pa pressures, while charge storage capacity values increased with increased deposition pressure. Results show that room-temperature grown BST films have potential for device applications. © 2017 Elsevier B.V
Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
Here we demonstrate the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) processes by fabricating flexible polymer-GaN organic-inorganic core-shell nanofibers at a processing temperature much lower than that needed for the preparation of conventional GaN ceramic nanofibers. Polymer-GaN organic-inorganic core-shell nanofibers fabricated by the HCPA-ALD of GaN on electrospun polymeric (nylon 6,6) nanofibers at 200 °C were characterized in detail using electron microscopy, energy dispersive X-ray analysis, selected area electron diffraction, X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence measurements, and dynamic mechanical analysis. Although transmission electron microscopy studies indicated that the process parameters should be further optimized for obtaining ultimate uniformity and conformality on these high surface area 3D substrates, the HCPA-ALD process resulted in a ∼28 nm thick polycrystalline wurtzite GaN layer on polymeric nanofibers of an average fiber diameter of ∼70 nm. Having a flexible polymeric core and low processing temperature, these core-shell semiconducting nanofibers might have the potential to substitute brittle ceramic GaN nanofibers, which have already been shown to be high performance materials for various electronic and optoelectronic applications. This journal is © The Royal Society of Chemistry
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