Design and evaluation of in-line product repair strategies for defect reduction in the production of electric drives

Manufacturing companies are continuously facing the challenge of operating their manufacturing processes and systems in order to deliver the required production rates of high quality products of increasing complexity, with limited use and waste of resources. This aspect is particularly critical in emerging sectors, such as the e-mobility industry, where state of the art quality and process control technologies show strong limitations. This paper proposes new solutions for implementing in-line product repair strategies in the production of electric drives for the automotive industry. Moreover, it develops an innovative quantitative tool to estimate the impact of the proposed strategies on the overall process-chain performance. The benefits of the approach are validated within a real industrial context

Subnanosecond spectral diffusion of a single quantum dot in a nanowire

We have studied spectral diffusion of the photoluminescence of a single CdSe quantum dot inserted in a ZnSe nanowire. We have measured the characteristic diffusion time as a function of pumping power and temperature using a recently developed technique [G. Sallen et al, Nature Photon. \textbf{4}, 696 (2010)] that offers subnanosecond resolution. These data are consistent with a model where only a \emph{single} carrier wanders around in traps located in the vicinity of the quantum dot

Single-photon excitation of a coherent state: catching the elementary step of stimulated light emission

When a single quantum of electromagnetic field excitation is added to the same spatio-temporal mode of a coherent state, a new field state is generated that exhibits intermediate properties between those of the two parents. Such a single-photon-added coherent state is obtained by the action of the photon creation operator on a coherent state and can thus be regarded as the result of the most elementary excitation process of a classical light field. Here we present and describe in depth the experimental realization of such states and their complete analysis by means of a novel ultrafast, time-domain, quantum homodyne tomography technique clearly revealing their non-classical character.Comment: 9 pages, 9 figures. Accepted for publication in Phys. Rev.

Tunable control of the bandwidth and frequency correlations of entangled photons

We demonstrate experimentally a new technique to control the bandwidth and the type of frequency correlations (correlation, anticorrelation, and even uncorrelation) of entangled photons generated by spontaneous parametric downconversion. The method is based on the control of the group velocities of the interacting waves. This technique can be applied in any nonlinear medium and frequency band of interest. It is also demonstrated that this technique helps enhance the quality of polarization entanglement even when femtosecond pulses are used as a pump.Comment: 4 pages, 4 figures, submitted to Phys. Rev. Let

Efficient single-photon emission from electrically driven InP quantum dots epitaxially grown on Si(001)

The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a long-time challenge, since different material properties lead to high defect densities in the epitaxial layers. In recent years, nanostructures however have shown to be suitable for successfully realising light emitters on silicon, taking advantage of their geometry. Facet edges and sidewalls can minimise or eliminate the formation of dislocations, and due to the reduced contact area, nanostructures are little affected by dislocation networks. Here we demonstrate the potential of indium phosphide quantum dots as efficient light emitters on CMOS-compatible silicon substrates, with luminescence characteristics comparable to mature devices realised on III-V substrates. For the first time, electrically driven single-photon emission on silicon is presented, meeting the wavelength range of silicon avalanche photo diodes' highest detection efficiency

Subnanosecond spectral diffusion measurement using photon correlation

Spectral diffusion is a result of random spectral jumps of a narrow line as a result of a fluctuating environment. It is an important issue in spectroscopy, because the observed spectral broadening prevents access to the intrinsic line properties. However, its characteristic parameters provide local information on the environment of a light emitter embedded in a solid matrix, or moving within a fluid, leading to numerous applications in physics and biology. We present a new experimental technique for measuring spectral diffusion based on photon correlations within a spectral line. Autocorrelation on half of the line and cross-correlation between the two halves give a quantitative value of the spectral diffusion time, with a resolution only limited by the correlation set-up. We have measured spectral diffusion of the photoluminescence of a single light emitter with a time resolution of 90 ps, exceeding by four orders of magnitude the best resolution reported to date

Publisher’s Note: “Polymer-specific effects of bulk relaxation and stringlike correlated motion in the dynamics of a supercooled polymer melt” [J. Chem. Phys. 119, 5290 (2003)]

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70462/2/JCPSA6-120-14-6798-1.pd