Dispersion-engineered silicon nitride waveguides for mid-infrared supercontinuum generation covering the wavelength range 0.8-6.5 mu m

We numerically demonstrate the generation of a mid-infrared supercontinuum (SC) through the design of an on-chip complementary metal oxide semiconductor (CMOS) compatible 10-mm-long air-clad rectangular waveguide made using stoichiometric silicon nitride (Si 3 N 4 ) as the core and MgF 2 glass as its lower cladding. The proposed waveguide is optimized for pumping in both the anomalous and all-normal dispersion regimes. A number of waveguide geometries are optimized for pumping at 1.55 μ m with ultrashort pulses of 50-fs duration and a peak power of 5 kW. By initially keeping the thickness constant at 0.8 μ m, four different structures are engineered with varying widths between 3 μ m and 6 μ m. The largest SC spectral evolution covering a region of 0.8 μ m to beyond 6.5 μ m could be realized by a waveguide geometry with a width of 3 μ m. Numerical analysis shows that increasing width beyond 3 μ m by fixing thickness at 0.8 μ m results in a reduction of the SC extension in the long wavelength side. However, the SC spectrum can be enhanced beyond 6.5 μ m by increasing the waveguide thickness beyond 0.9 μ m with the same peak power and pump source. To the best of our knowledge, this is first time report of a broad SC spectral evolution through numerical demonstration in the mid-infrared region by the silicon nitride waveguide. In the case of all-normal dispersion pumping, a flatter SC spectra can be predicted with the same power and pump pulse but with a reduced bandwidth spanning 950–2100 nm

Fermi energy dependence of first- and second-order Raman spectra in graphene: Kohn anomaly and quantum interference effect

Intensity of the first- and the second-order Raman spectra are calculated as a function of the Fermi energy. We show that the Kohn anomaly effect, i.e., phonon frequency renormalization, in the first-order Raman spectra originates from the phonon renormalization by the interband electron-hole excitation, whereas in the second-order Raman spectra, a competition between the interband and intraband electron-hole excitations takes place. By this calculation, we confirm the presence of different dispersive behaviors of the Raman peak frequency as a function of the Fermi energy for the first- and the second-order Raman spectra, as observed in experiments. Moreover, the calculated results of the Raman intensity sensitively depend on the Fermi energy for both the first- and the second-order Raman spectra. These results thus also show the importance of quantum interference effect phenomena.Comment: 9 pages, 10 figure

Hydrophobicity properties of graphite and reduced graphene oxide of the polysulfone (PSf) mixed matrix membrane

Hydrophobicity properties of graphite and reduced graphene oxide (rGO) (from exfoliated graphite/rGO) towards PSf polymer membrane characteristic and properties at different additives weight concentrations (1, 2, 3, 4 and 5 wt. %) were investigated. Both PSF/graphite and PSf/rGO membranes were characterized in term of hydrophobicity, surface bonding, surface roughness and porosity. FTIR peaks revealed that membrane with graphite and reduced graphene oxide nearly diminished their O-H bonding which was opposite to the graphene oxide peak that shows a strong O-H bonding as increased exfoliated times. These results were in line with the contact angle results that showed strong hydrophobicity of graphite and reduced graphene oxide membranes as increased these additives concentration. The effect of strong hydrophobicity in these membranes also has resulted in smoother surface roughness compared to pristine PSf membrane. Further investigation of the performance of water flux also proved that both above membranes have strong hydrophobic effect, with the lowest pure water flux rate (L/m2h) was given by PSf/rGO 3% membrane at 19.2437 L/m2h

Breit-Wigner-Fano lineshapes in Raman spectra of graphene

Excitation of electron-hole pairs in the vicinity of the Dirac cone by the Coulomb interaction gives rise to an asymmetric Breit-Wigner-Fano lineshape in the phonon Raman spectra in graphene. This asymmetric lineshape appears due to the interference effect between the phonon spectra and the electron-hole pair excitation spectra. The calculated Breit-Wigner-Fano asymmetric factor 1/qBWF as a function of the Fermi energy shows a V-shaped curve with a minimum value at the charge neutrality point and gives good agreement with the experimental result.Comment: 15 pages, 4 figure