1,022 research outputs found
Coherence of Spin Qubits in Silicon
Given the effectiveness of semiconductor devices for classical computation
one is naturally led to consider semiconductor systems for solid state quantum
information processing. Semiconductors are particularly suitable where local
control of electric fields and charge transport are required. Conventional
semiconductor electronics is built upon these capabilities and has demonstrated
scaling to large complicated arrays of interconnected devices. However, the
requirements for a quantum computer are very different from those for classical
computation, and it is not immediately obvious how best to build one in a
semiconductor. One possible approach is to use spins as qubits: of nuclei, of
electrons, or both in combination. Long qubit coherence times are a
prerequisite for quantum computing, and in this paper we will discuss
measurements of spin coherence in silicon. The results are encouraging - both
electrons bound to donors and the donor nuclei exhibit low decoherence under
the right circumstances. Doped silicon thus appears to pass the first test on
the road to a quantum computer.Comment: Submitted to J Cond Matter on Nov 15th, 200
Structural and Electronic Properties of Amorphous and Polycrystalline In2Se3 Films
Structural and electronic properties of amorphous and single-phase
polycrystalline films of gamma- and kappa-In2Se3 have been measured. The stable
gamma phase nucleates homogeneously in the film bulk and has a high
resistivity, while the metastable kappa phase nucleates at the film surface and
has a moderate resistivity. The microstructures of hot-deposited and
post-annealed cold-deposited gamma films are quite different but the electronic
properties are similar. The increase in the resistivity of amorphous In2Se3
films upon annealing is interpreted in terms of the replacement of In-In bonds
with In-Se bonds during crystallization. Great care must be taken in the
preparation of In2Se3 films for electrical measurements as the presence of
excess chalcogen or surface oxidation may greatly affect the film properties.Comment: 23 pages and 12 figure
High fidelity quantum memory via dynamical decoupling: theory and experiment
Quantum information processing requires overcoming decoherence---the loss of
"quantumness" due to the inevitable interaction between the quantum system and
its environment. One approach towards a solution is quantum dynamical
decoupling---a method employing strong and frequent pulses applied to the
qubits. Here we report on the first experimental test of the concatenated
dynamical decoupling (CDD) scheme, which invokes recursively constructed pulse
sequences. Using nuclear magnetic resonance, we demonstrate a near order of
magnitude improvement in the decay time of stored quantum states. In
conjunction with recent results on high fidelity quantum gates using CDD, our
results suggest that quantum dynamical decoupling should be used as a first
layer of defense against decoherence in quantum information processing
implementations, and can be a stand-alone solution in the right parameter
regime.Comment: 6 pages, 3 figures. Published version. This paper was initially
entitled "Quantum gates via concatenated dynamical decoupling: theory and
experiment", by Jacob R. West, Daniel A. Lidar, Bryan H. Fong, Mark F. Gyure,
Xinhua Peng, and Dieter Suter. That original version split into two papers:
http://arxiv.org/abs/1012.3433 (theory only) and the current pape
Host isotope mass effects on the hyperfine interaction of group-V donors in silicon
The effects of host isotope mass on the hyperfine interaction of group-V
donors in silicon are revealed by pulsed electron nuclear double resonance
(ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the
hyperfine-split P-31, As-75, Sb-121, Sb-123, and Bi-209 ENDOR lines splits
further into multiple components, whose relative intensities accurately match
the statistical likelihood of the nine possible average Si masses in the four
nearest-neighbor sites due to random occupation by the three stable isotopes
Si-28, Si-29, and Si-30. Further investigation with P-31 donors shows that the
resolved ENDOR components shift linearly with the bulk-averaged Si mass.Comment: 5 pages, 4 figures, 1 tabl
Influence of layer microstructure on the double nucleation process in Cu/Mg multilayers
9 páginas, 9 figuras, 3 tablas.-- et al.We have investigated by differential scanning calorimetry the thermal evolution of Cu/Mg multilayers with different modulation lengths, ranging from 7/28 to 30/120 nm. The Cu and Mg layers were grown by sequential evaporation in an electron beam deposition system. The phase identification and layer microstructure were determined by cross-section transmission electron microscopy, Rutherford backscattering, and scanning electron microscopy with focused ion beam for sample preparation. Upon heating, the intermetallic CuMg2 forms at the interfaces until coalescence is reached and thickens through a diffusion-limited process. Cross-section transmission electron microscopy observations show a distinct microstructure at the top and bottom of the as-prepared Mg layers, while no significant differences were seen in the Cu layers. We show that this effect is responsible for the observed asymmetry in the nucleation process between the Cu on Mg and the Mg on Cu interfaces. By modeling the calorimetric data we determine the role of both interfaces in the nucleation and lateral growth stages. We also show that vertical growth proceeds by grain development of the product phase, increasing significantly the roughness of the interfaces.The financial support by Project No. MAT2004-04761 granted by the Spanish Ministry of Education and 2005SGR00201 granted by the Direcció General de Recerca of the Generalitat of Catalonia is acknowledged. One of the authors (J.L.L.) acknowledges the financial support from the Hungarian National Science Fund (OTKA043437).Peer reviewe
Aperiodic dynamical decoupling sequences in presence of pulse errors
Dynamical decoupling (DD) is a promising tool for preserving the quantum
states of qubits. However, small imperfections in the control pulses can
seriously affect the fidelity of decoupling, and qualitatively change the
evolution of the controlled system at long times. Using both analytical and
numerical tools, we theoretically investigate the effect of the pulse errors
accumulation for two aperiodic DD sequences, the Uhrig's DD UDD) protocol [G.
S. Uhrig, Phys. Rev. Lett. {\bf 98}, 100504 (2007)], and the Quadratic DD (QDD)
protocol [J. R. West, B. H. Fong and D. A. Lidar, Phys. Rev. Lett {\bf 104},
130501 (2010)]. We consider the implementation of these sequences using the
electron spins of phosphorus donors in silicon, where DD sequences are applied
to suppress dephasing of the donor spins. The dependence of the decoupling
fidelity on different initial states of the spins is the focus of our study. We
investigate in detail the initial drop in the DD fidelity, and its long-term
saturation. We also demonstrate that by applying the control pulses along
different directions, the performance of QDD protocols can be noticeably
improved, and explain the reason of such an improvement. Our results can be
useful for future implementations of the aperiodic decoupling protocols, and
for better understanding of the impact of errors on quantum control of spins.Comment: updated reference
In-situ non-destructive analysis of Etruscan gold jewels with the micro-XRF transportable spectrometer from CNA
Application of Pulsed Field Gel Electrophoresis to Determine γ-ray-induced Double-strand Breaks in Yeast Chromosomal Molecules
The frequency of DNA double-strand breaks (dsb) was determined in yeast cells exposed to γ-rays under anoxic conditions. Genomic DNA of treated cells was separated by pulsed field gel electrophoresis, and two different approaches for the evaluation of the gels were employed: (1) The DNA mass distribution profile obtained by electrophoresis was compared to computed profiles, and the number of DSB per unit length was then derived in terms of a fitting procedure; (2) hybridization of selected chromosomes was performed, and a comparison of the hybridization signals in treated and untreated samples was then used to derive the frequency of dsb
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