Coherence of Spin Qubits in Silicon

Given the effectiveness of semiconductor devices for classical computation one is naturally led to consider semiconductor systems for solid state quantum information processing. Semiconductors are particularly suitable where local control of electric fields and charge transport are required. Conventional semiconductor electronics is built upon these capabilities and has demonstrated scaling to large complicated arrays of interconnected devices. However, the requirements for a quantum computer are very different from those for classical computation, and it is not immediately obvious how best to build one in a semiconductor. One possible approach is to use spins as qubits: of nuclei, of electrons, or both in combination. Long qubit coherence times are a prerequisite for quantum computing, and in this paper we will discuss measurements of spin coherence in silicon. The results are encouraging - both electrons bound to donors and the donor nuclei exhibit low decoherence under the right circumstances. Doped silicon thus appears to pass the first test on the road to a quantum computer.Comment: Submitted to J Cond Matter on Nov 15th, 200

Structural and Electronic Properties of Amorphous and Polycrystalline In2Se3 Films

Structural and electronic properties of amorphous and single-phase polycrystalline films of gamma- and kappa-In2Se3 have been measured. The stable gamma phase nucleates homogeneously in the film bulk and has a high resistivity, while the metastable kappa phase nucleates at the film surface and has a moderate resistivity. The microstructures of hot-deposited and post-annealed cold-deposited gamma films are quite different but the electronic properties are similar. The increase in the resistivity of amorphous In2Se3 films upon annealing is interpreted in terms of the replacement of In-In bonds with In-Se bonds during crystallization. Great care must be taken in the preparation of In2Se3 films for electrical measurements as the presence of excess chalcogen or surface oxidation may greatly affect the film properties.Comment: 23 pages and 12 figure

High fidelity quantum memory via dynamical decoupling: theory and experiment

Quantum information processing requires overcoming decoherence---the loss of "quantumness" due to the inevitable interaction between the quantum system and its environment. One approach towards a solution is quantum dynamical decoupling---a method employing strong and frequent pulses applied to the qubits. Here we report on the first experimental test of the concatenated dynamical decoupling (CDD) scheme, which invokes recursively constructed pulse sequences. Using nuclear magnetic resonance, we demonstrate a near order of magnitude improvement in the decay time of stored quantum states. In conjunction with recent results on high fidelity quantum gates using CDD, our results suggest that quantum dynamical decoupling should be used as a first layer of defense against decoherence in quantum information processing implementations, and can be a stand-alone solution in the right parameter regime.Comment: 6 pages, 3 figures. Published version. This paper was initially entitled "Quantum gates via concatenated dynamical decoupling: theory and experiment", by Jacob R. West, Daniel A. Lidar, Bryan H. Fong, Mark F. Gyure, Xinhua Peng, and Dieter Suter. That original version split into two papers: http://arxiv.org/abs/1012.3433 (theory only) and the current pape

Host isotope mass effects on the hyperfine interaction of group-V donors in silicon

The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split P-31, As-75, Sb-121, Sb-123, and Bi-209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical likelihood of the nine possible average Si masses in the four nearest-neighbor sites due to random occupation by the three stable isotopes Si-28, Si-29, and Si-30. Further investigation with P-31 donors shows that the resolved ENDOR components shift linearly with the bulk-averaged Si mass.Comment: 5 pages, 4 figures, 1 tabl

Influence of layer microstructure on the double nucleation process in Cu/Mg multilayers

9 páginas, 9 figuras, 3 tablas.-- et al.We have investigated by differential scanning calorimetry the thermal evolution of Cu/Mg multilayers with different modulation lengths, ranging from 7/28 to 30/120 nm. The Cu and Mg layers were grown by sequential evaporation in an electron beam deposition system. The phase identification and layer microstructure were determined by cross-section transmission electron microscopy, Rutherford backscattering, and scanning electron microscopy with focused ion beam for sample preparation. Upon heating, the intermetallic CuMg2 forms at the interfaces until coalescence is reached and thickens through a diffusion-limited process. Cross-section transmission electron microscopy observations show a distinct microstructure at the top and bottom of the as-prepared Mg layers, while no significant differences were seen in the Cu layers. We show that this effect is responsible for the observed asymmetry in the nucleation process between the Cu on Mg and the Mg on Cu interfaces. By modeling the calorimetric data we determine the role of both interfaces in the nucleation and lateral growth stages. We also show that vertical growth proceeds by grain development of the product phase, increasing significantly the roughness of the interfaces.The financial support by Project No. MAT2004-04761 granted by the Spanish Ministry of Education and 2005SGR00201 granted by the Direcció General de Recerca of the Generalitat of Catalonia is acknowledged. One of the authors (J.L.L.) acknowledges the financial support from the Hungarian National Science Fund (OTKA043437).Peer reviewe

Aperiodic dynamical decoupling sequences in presence of pulse errors

Dynamical decoupling (DD) is a promising tool for preserving the quantum states of qubits. However, small imperfections in the control pulses can seriously affect the fidelity of decoupling, and qualitatively change the evolution of the controlled system at long times. Using both analytical and numerical tools, we theoretically investigate the effect of the pulse errors accumulation for two aperiodic DD sequences, the Uhrig's DD UDD) protocol [G. S. Uhrig, Phys. Rev. Lett. {\bf 98}, 100504 (2007)], and the Quadratic DD (QDD) protocol [J. R. West, B. H. Fong and D. A. Lidar, Phys. Rev. Lett {\bf 104}, 130501 (2010)]. We consider the implementation of these sequences using the electron spins of phosphorus donors in silicon, where DD sequences are applied to suppress dephasing of the donor spins. The dependence of the decoupling fidelity on different initial states of the spins is the focus of our study. We investigate in detail the initial drop in the DD fidelity, and its long-term saturation. We also demonstrate that by applying the control pulses along different directions, the performance of QDD protocols can be noticeably improved, and explain the reason of such an improvement. Our results can be useful for future implementations of the aperiodic decoupling protocols, and for better understanding of the impact of errors on quantum control of spins.Comment: updated reference

Application of Pulsed Field Gel Electrophoresis to Determine γ-ray-induced Double-strand Breaks in Yeast Chromosomal Molecules

The frequency of DNA double-strand breaks (dsb) was determined in yeast cells exposed to γ-rays under anoxic conditions. Genomic DNA of treated cells was separated by pulsed field gel electrophoresis, and two different approaches for the evaluation of the gels were employed: (1) The DNA mass distribution profile obtained by electrophoresis was compared to computed profiles, and the number of DSB per unit length was then derived in terms of a fitting procedure; (2) hybridization of selected chromosomes was performed, and a comparison of the hybridization signals in treated and untreated samples was then used to derive the frequency of dsb